Abstract
Owing to the fact that the gate-all-around architecture is expected to prevail in the upcoming technology nodes, in this work we have taken up a simulation-based investigation on design of a gate-all-around junctionless transistor (GAA-JLT) based label-free gas sensor with conducting polymer (CP) gate. In the initial part of our work we have focused on the variation n device and sensor performance with initial work function of the CP, which depends upon its growth condition and primary doping. Interaction with various test gases modifies the CP characteristics, thereby changing its work function. Due to this a change in device characteristics is observed, which serves as the metric for assessing the GAA-JLT-based gas sensor performance. We have investigated the variation in device characteristics in the presence of different test gases. Further, the variation in sensor performance on interaction with the different test gases has been examined. The impact of operating conditions such as ambient temperature and partial pressure of the test gas on the sensing performance has been investigated. The impact of device dimension on the sensing performance has also been evaluated. Our computations reflect that tuning the initial work function of the CP by choosing the proper primary dopant concentration model along with proper tuning of the operating conditions can enhance the performance accuracy of the sensor.
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