Molecular design and synthesis of a new insulating material has allowed scientists to fabricate a new type of transistor that shows promise for high-speed, lowpower applications in a new generation of consumer electronics and communications devices. The new transistor is based on the semiconductor gallium arsenide (GaAs) and a new insulator, cubic gallium sulfide (GaS). The development was announced by Andrew R. Barron, a professor of chemistry at Harvard University who led the research, at a symposium held by the Division of Industrial & Engineering Chemistry at the American Chemical Society national meeting. Barron believes the new transistor could extend use of gallium arsenide— and even improve its performance—in applications where, despite some some limitations, it is already being used. Gallium arsenide, he notes, is the semiconductor of choice for certain niche applications. These include lasers for optical communications, LEDs (light-emitting diodes) for consumer electronics, microwave circuits ...
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