Injection lasers in the 1.3–1.8 μm wavelength range

Abstract

There are developed techniques for the preparation of diode lasers in the 1.3 to 1.8 μm range on the basis of quaternary epitaxial heterostructure. Devices for a particular wavelength of 1.3 μm are now commercially available. The state of art in the laser studies with connection to lower room-temperature threshold and to higher operation temperature is illustrated in fig. 9. We feel that the laser system of InGaAsP, which is known since 1974 [1, 2], may be elaborated further for higher laser characteristics in spite of the fact that present state is quite acceptable for different applications. There are many fibre-optics projects based on the conception of laser optical communication with the use of diodes in the range of 1.3–1.8 μm.