Online Junction Temperature Research Articles

An Online Junction Temperature Estimating Method for SiC MOSFETs Based on Steady-State Features and GPR

An Online Junction Temperature Estimating Method for SiC MOSFETs Based on Steady-State Features and GPR

A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance

A Gate Degradation Independent Online Junction Temperature Estimation Method for SiC MOSFETs Based on Residual Resistance

On-line junction temperature identification of converter power devices

Abstract Traction converters often fail or age due to long operation hours, complex conditions, and frequent braking, mainly caused by overheating or temperature fluctuations. Monitoring the temperature at the junction of power device is crucial for system reliability. To achieve this, the electric-heat coupling models of IGBT are studied. Models for IGBT’s switching and conduction processes were created using its data sheet, yielding a power loss model linked to junction temperature. A Foster thermal network model for IGBT was then established, deriving the equation for temperature change when losses act as heat sources. Combining these models, an electric-heat coupling model was built on the SIMULINK platform, applied to predict and simulate junction temperature in a two-level inverter, generating a temperature-time image. Finally, an experimental test platform for a two-level SVPWM-modulated inverter was set up, using an infrared sensor to measure IGBT’s steady-state junction temperature. This was compared with simulation results to verify the model’s accuracy.

An Online Junction Temperature Monitoring Method for Press-pack IGBT Based on a Novel TSEP with a Good Linearity

An Online Junction Temperature Monitoring Method for Press-pack IGBT Based on a Novel TSEP with a Good Linearity

An Online Junction Temperature Estimation Method of IGBTs based on the improved on-state voltage measuring circuit

An Online Junction Temperature Estimation Method of IGBTs based on the improved on-state voltage measuring circuit

Coordinated Online Junction Temperature Estimation of MOSFETs and Antiparallel Diodes in Three-Phase SiC Inverters

Coordinated Online Junction Temperature Estimation of MOSFETs and Antiparallel Diodes in Three-Phase SiC Inverters

Junction temperature monitoring for cascode GaN devices using the Si MOSFET's body diode voltage drop

In this paper, a new online junction temperature monitoring method is proposed for cascode GaN devices using the body diode of Si MOSFET. The reverse current during soft-switching mode is utilized to extract the voltage drop of the Si MOSFET's body diode. It is pointed out that, to accurately obtain the voltage drop of Si MOSFET's body diode, the VDS voltage of cascode GaN device should be measured when the reverse current is small during the dead-time period. An experimental platform has been designed to validate the proposed method. The proposed method exhibits an accuracy within 0.6 °C and a R2 = 0.99 goodness of linear fit on a test Buck converter, showing that this method is practical for real applications.

Investigation and Comparison of Temperature-Sensitive Electrical Parameters of SiC mosfet at Extremely High Temperatures

Due to the excellent silicon carbide (SiC) material characteristics, SiC MOSFETs can operate at extremely high temperatures and can be used in harsh environment applications. In this case, it is crucial to ensure the reliability of the power electronic systems. The temperature-sensitive electrical parameters (TSEPs) have been used for online junction temperature monitoring to monitor the health condition of the SiC MOSFET at low temperatures (<175℃). However, the performance of the TSEPs at extremely high temperatures is still unknown, and the influence of temperature on the TSEPs of SiC MOSFET at extremely high temperatures is unclear. In this article, the theoretical mechanisms of the impact of the extremely high temperature on TSEPs are investigated in detail. In particular, the different effects of high temperature on the turn-on delay time and turn-off delay time are discussed carefully. Based on the high-temperature characteristic test method proposed, the TSEPs of SiC MOSFET (including static and dynamic characteristics) are tested and analyzed comprehensively from room temperature to 375℃. And the sensitivity and linearity of the TSEPs in different temperature ranges are analyzed and compared. According to the results, threshold voltage and turn-off delay time are the two TSEPs with good sensitivity and linearity over a wide temperature range (from room temperature to 375℃). And the linearity of turn-off delay time is the best among all TSEPs over a wide temperature range.

A High-Frequency Online Junction Temperature Monitoring Method for SiC mosfets Based on on-State Resistance With Aging Compensation

A High-Frequency Online Junction Temperature Monitoring Method for SiC mosfets Based on on-State Resistance With Aging Compensation

Online Monitoring Method of P-I-N Diode Temperature Based on Maximum Recovery Current

The P-i-N diode is as important as insulated gate bipolar translators (IGBTs) in power electronic devices, and its junction temperature is a significant indicator when evaluating the reliability of power electronics. Thus, an online junction temperature monitoring method with the maximum recovery current for P-i-N diodes is proposed in this paper. Firstly, the relationship among maximum recovery current, on-state current and junction temperature of diode has been deduced in theory. The linear correlation among the maximum recovery current, temperature, and on-state current have been illustrated. Secondly, a sampling circuit based on a current transformer has been designed. And then, the mathematical model of junction temperature online monitoring based on the maximum recovery current and sampling circuit has been obtained. Finally, the experimental platform based on the DSP TMS320F28335 has been developed. The experimental results verify the correctness of the relationship among maximum recovery current, on-state current and junction temperature of the diode, and high accuracy of the proposed online monitoring method in practice application, where the maximum temperature error and error percentage are 4.7℃ and 4.49%, respectively. In addition, the proposed method has advantages of simplicity, small size, low cost, convenient installation, and high linearity.

An Online Junction Temperature Monitoring Method for SiC MOSFET Based on Drain-source Voltage Change Rate During Turn-on Transient

This paper analyzes the turn-on transient of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) based on the basic physical equation, and the analysis model of drain-source voltage change rate (dv ds/dt ) during turn-on transient is derived. The change rule of dv ds/dt of SiC MOSFET during turn-on transient and its temperature-dependent characteristics are studied, and the calculations generally fit the measurements well. Experimental results show that the magnitude of turn-on dv ds/dt increases with increasing temperature and exhibits good linearity. The influence of driving conditions on the temperature dependence of the turn-on dv ds/dt is also analyzed through the model, finding that the temperature sensitivity can be improved by reducing the driving forward bias voltage and increasing the driving resistance. Finally, the online junction temperature monitoring experiments are used to verify the accuracy and effectiveness of the proposed method.

A Novel IGBT Junction Temperature Detection Based on High-Frequency Model of Inductor Element

Accurate online junction temperature detection of high-power insulated gate bipolar transistor (IGBT) modules is necessary for the health management system of key equipment. The voltage rise time ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{\mathrm {rv}}$ </tex-math></inline-formula> ) is a good temperature sensitive electrical parameter (TSEP), which is of great significance for its accurate online extraction. In this article, a novel IGBT junction temperature detection based on the high-frequency (HF) model of inductor element is proposed. First, the equivalent model of the inductor element in the application circuit at HF is demonstrated. Second, based on the HF model of the inductor element, it is proposed and verified that <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{\mathrm {rv}}$ </tex-math></inline-formula> in the IGBT turn-off process is consistent with the HF current pulse signal on the inductor element at HF, that is, <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$t_{\mathrm {rv}}$ </tex-math></inline-formula> can be indirectly obtained by extracting the HF current pulse signal. Finally, the feasibility for voltage rise time extraction and junction temperature detection through HF isolation coil is verified by experiments and simulations. The research work in this article is helpful to the online junction temperature detection and has certain theoretical significance and practical engineering value.

A High-Sensitivity Online Junction Temperature Monitoring Method for SiC mosfets Based on the Turn-on Drain–Source Current Overshoot

Junction temperature monitoring is the basis of high reliability operation for silicon carbide (SiC) devices, since thermal stress is the dominating aging factor. Conventional thermal sensitive electrical parameter methods have a poor monitoring performance for SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Mosfets</small> with low sensitivity. Thus, a high-sensitivity online junction temperature monitoring method is proposed based on the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> drain–source current overshoot. First, theoretical analysis is provided to clarify that the temperature difference between the body diode region and the on-state resistance region can be ignored in SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Mosfets</small> . It is an important basis for the proposed method, which is proven by an isothermal experiment. It is the first time to discover that the turn- <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">on</small> current overshoot (Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i_Cm</i> ) of SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Mosfets</small> consists of both the reverse recovery current ( <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RR</sub> ) and the intrinsic current overshoot (Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_m</i> ). Next, a novel <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">T_j</i> monitoring strategy for SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">Mosfets</small> is proposed based on comprehensive utilization of <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">RR</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_m</i> , Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i</i> <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</sub> <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">_m</i> and Δ <italic xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">i_Cm</i> . Finally, the effectiveness of the proposed method is verified by online experiments based on a dc–dc converter. The proposed method is more accurate than conventional TSEP methods with a high sensitivity of 20 mA/°C. Moreover, it still has a high monitoring performance when boundary conditions change.

An On-Line Calibration Method for TSEP-Based Junction Temperature Estimation

Temperature sensitive electrical parameters (TSEP) provide an indirect and noninvasive method for on-line junction temperature estimation of power semiconductor devices. It is known that the fundamental of TSEP-based methods is to calibrate the relationship between TSEP and junction temperature in advance. However, the calibration methods in the literature need to open the module, require pretesting, or record the operating data of a converter in the entire power rating range, which are inconvenient in field applications. This article proposes an on-line and noninvasive calibration method by measuring the data at three operating states that are already existed in the regular converter operation. It is achieved by measuring the accessible heatsink/case temperature and TSEP during converter regular operation. The concept, implementation, and error analysis of the proposed method are presented in this article. Experimental verification is given to prove the effectiveness, accuracy, and convenience of the proposed method.

Online Junction Temperature Measurement of Double-sided Cooling IGBT Power Module through On-state Voltage with High Current

The aim of this study is to achieve online monitoring of the junction temperature of double-sided-cooling insulated gate bipolar transistor (IGBT) power modules by using the on-state voltage under a high current to maximize the utilization of IGBT power chips. Online junction temperature measurement plays an important role in improving the reliability of the inverter with IGBT, increasing the power density of the motor controller of electric vehicles, and reducing the cost of electric vehicles.

An Online Junction Temperature Monitoring Correction Method for SiC MOSFETs at Different Parasitic Parameters

Due to the remarkable performance of silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor (MOSFET) on high temperature, it is promising in future applications in various applications. The accurate online junction temperature based on dynamic temperature-sensitive electrical parameters (TSEPs) is significant for the protection and condition monitoring, which can prolong or monitor the lifetime of SiC MOSFET devices. In this article, four different dynamic TSEPs, including turn-on delay time, turn-off delay time, and maximum current turn-on and turn-off switching rates, are theoretically analyzed taking the parasitic parameters into consideration. The experimental analysis of the influence of parasitic parameters ’ dynamic TSEPs is carried on using a buck converter test setup. Based on the theoretical and experimental analyses, a junction temperature correction method is proposed for SiC MOSFET. The online junction temperature monitoring experiments are used to verify the accuracy and effectiveness of the proposed method. The results show that the proposed correction method can largely eliminate the junction temperature monitoring error at different parasitic parameters. The maximum measurement error is reduced from 147 °C to 4.7 °C after correction.

Monolithic Integration of 1.2kV Optically-Controlled SiC npn Transistor and Antiparallel Diode

In this letter, a 1.2kV optically-controlled SiC transistor (OCT) is proposed and fabricated. A pin diode is monolithically integrated with the SiC OCT for reverse conducting and online junction temperature measurement capability. Field limiting rings are designed as terminal structure for forward blocking capability. The test results indicated that, besides full optical control and high blocking voltage performances, the fabricated transistor chip was also capable of reverse conducting and online junction temperature measurement. The forward breakdown voltage of the transistor was about 1400V and the leakage current at 1200V was <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${2.5}\,\,\times \,\,{10}\,\,^{-{8}}\text{A}$ </tex-math></inline-formula> . The reverse turn-on voltage was about 2.6V, while the temperature sensitivity of the integrated diode was 2.99mV/K at 5mA. Under 365nm ultraviolet (UV) light with 300mW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> incident intensity, the forward current of the OCT chip was <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$203.2\mu \text{A}$ </tex-math></inline-formula> at 0.3V, which is about <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${1.2}\,\,\times \,\,{10}\,\,^{{5}}$ </tex-math></inline-formula> times the corresponding dark current. The transient characteristic was tested at a 600V bias voltage in a resistive load circuit and the results indicate that the OCT can be switched using a 365nm UV light emitting diode.

Online Junction Temperature and Current Simultaneous Extraction for SiC MOSFETs With Electroluminescence Effect

In this letter, a junction-temperature and current extraction method is presented based on the electroluminescence mechanism of the SiC <sc xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">mosfet</small> body diode. Starting from the observation of two characteristic peaks in the emitted light spectrum, we proved that the junction temperature and the drain current can be simultaneously measured. This novel method consists of decoupling the relationship between the intensity of the electroluminescence peaks, the current, and the temperature. Through this optical method with inherent electrical isolation, the junction temperature and current in the SiC chip can be simultaneously measured with high precision. The total error of the junction temperature estimation is within ±3 °C, and the error of the current estimation is about ±0.2 A.

On-line temperature measurement during power cycle of PCB-embedded diode

This paper presents an original methodology and a test bench for active power cycling and on-line junction temperature measurement during power cycling of power devices embedded in PCB. This method is based on the use of the ratio between forward voltage and forward current variations (∆VF,∆IF) during conduction period to estimate the thermal voltage UT and thus the junction temperature in real time. The objective of this study is to estimate the junction temperature even for high frequency of power cycling tests. First, the measurement method is presented, and then the test bench is described.

Accurate Online Junction Temperature Estimation of IGBT Using Inflection Point Based Updated I–V Characteristics

The junction temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> ) estimation of the insulated gate bipolar transistor (IGBT) is important for reliable operation of the power converters in various applications. For T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> estimation, on-state collector-emitter voltage (v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ce</sub> ) at higher collector currents (i <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">c</sub> ) is widely used temperature sensitive electrical parameter (TSEP). For real-time T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> estimation, this TSEP is calibrated using the I-V characteristics of the new IGBT. Due to bond-wire degradation, the original I-V characteristics of IGBT changes resulting in inaccurate T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> estimation. In this article, a technique is proposed to update the I-V characteristics of the degraded IGBT, without affecting the normal operation of the power converter. It is achieved by estimating the increment in bond-wire resistance (\triangle R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">con</sub> ) by using real-time samples of v <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ce</sub> and inductor current. The mathematical analysis is also presented to find an error in estimated \triangle R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">con</sub> . The major contributions of this article are as follows: a) it enables the accurate T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> estimation of the IGBT throughout its lifetime; and b) it also provides the parameter \triangle R <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">con</sub> , which could be utilized in condition monitoring of the IGBT. Further no additional circuitry is required. The proposed technique is validated on experimental setup, which is developed in the laboratory. The error in T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">j</sub> estimation is observed within $1$ °C the degraded IGBT, which shows the effectiveness of the proposed scheme.