Abstract
This paper analyzes the turn-on transient of silicon carbide (SiC) metal oxide semiconductor field effect transistor (MOSFET) based on the basic physical equation, and the analysis model of drain-source voltage change rate (dv ds/dt ) during turn-on transient is derived. The change rule of dv ds/dt of SiC MOSFET during turn-on transient and its temperature-dependent characteristics are studied, and the calculations generally fit the measurements well. Experimental results show that the magnitude of turn-on dv ds/dt increases with increasing temperature and exhibits good linearity. The influence of driving conditions on the temperature dependence of the turn-on dv ds/dt is also analyzed through the model, finding that the temperature sensitivity can be improved by reducing the driving forward bias voltage and increasing the driving resistance. Finally, the online junction temperature monitoring experiments are used to verify the accuracy and effectiveness of the proposed method.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
