Norde Method Research Articles

Effect of Organic Dye Concentration on the Nanostructured TiO2‐Based Diodes

In this study, A/TiO2/FTO, A/(CV (Crystal Violet) dye)X‐TiO2/FTO Schottky diode devices (A = Ag/Au), (X = 1.0, 1.5, 2.0, 2.5, 3.0 mg) with TiO2 nanostructures are fabricated. The TiO2 nanostructures are synthesized using the hydrothermal method on the FTO substrate. The samples' dark current–voltage (I–V) characteristics are studied with a B1500A semiconductor parameter analyzer. The devices exhibited good rectifying behavior at room temperature. Ideality factor (η), barrier height (φb), and series resistance (RS) are calculated from I–V measurements at room temperature by fitting with thermionic emission theory, Norde method, and Cheung method. The obtained results reveal that various CV dye concentration affects the important junction parameters of the fabricated Schottky diodes, such as ideality factor (η), barrier height (φb), and series resistance (RS). However, a systematic change is not observed as the number of CV aggregates between the TiO2 and the electrode might be different for each device. However, a low series resistance is obtained with these nanostructures in the order of a few Ω–kΩ. It is found that barrier height did not change much on varying CV dye concentrations. Hence, these dye‐sensitized TiO2 nanostructures can be used to make diodes.

The Ptcdi-C8/P-Si Heterojunction Diode: Its Construction and Electrical Characterization

In this study, an Al/PTCDI-C8/p-Si organic-inorganic (OI) heterojunction diode (C1) was fabricated by depositing a PTCDI-C8 thin film onto p-Si using the spin coating method. Likewise, a conventional Al/p-Si metal-semiconductor (MS) diode (C0) was fabricated without the use of an interlayer. I-V and C-V measurements of the C0 and C1 diodes were taken in the dark and at room temperature. The rectifying properties of both diodes were good. From the I–V characteristics, the ideality factor, barrier height, and series resistance of the C1 diode were determined to be 2.1, 0.74 eV, and 248 kΩ, respectively. The BH value obtained for the C1 heterojunction is higher than the value obtained for the conventional C0 diode. The electrical parameters of both the C1 and C0 diodes, particularly the series resistance, were recalculated using Cheungs and Norde methods. At room temperature, the C-V measurements of the diodes were carried out at various frequencies. From the evaluation of the C-V characteristics, the diffusion potential (Vd), barrier height (Φb(C-V)), and free carrier density (NA) of both diodes were calculated. Additionally, the device's photovoltaic parameters were measured under illumination conditions. The C1 heterojunction shows a photodiode behavior with the obtained photovoltaic parameters Voc and Isc.

Realization of diode structures on paper: An example of papertronics

A possibility of fabricating paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diode structures has been demonstrated here. Ag (∼5 μm), CdTe (∼50 μm), CdS (∼45 μm), Au and In dots (∼5 μm) were deposited on the cellulose using appropriate stainless-steel masks to obtain the requisite diode structures. The band gaps of the CdTe and CdS layers were ∼1.55 eV and ∼1.45 eV, respectively. Current-voltage (I-V) characteristics of the paper/Ag/CdTe/Au Schottky and paper/Ag/CdTe/CdS/In p-n junction diodes were recorded at room temperature. Ideality factor (n), series resistance (RS) and barrier height (φb) of the respective diodes were computed. The barrier height (φb) and ideality factor (n) computed from current-voltage characteristics were found to be 0.74 eV and 1.8, respectively at room temperature. Series resistance and φb computed by using Cheung-Cheung method were ∼177 Ω and ∼0.45 eV, respectively. They are comparable to the resistance derived from a modified Norde method. The fabricated diodes were reproducible and stable for a few months. These diode structures were tested in an open environment at room temperature and showed no noticeable ageing effect.

Photodetector performance analysis of a hybrid MnPc/DLC device with high photoresponsivity, sensitivity, and On/Off ratio

The fabrication and characterization of high-performance devices for optoelectronic applications, particularly their response to incident light, are crucial. In this study, a MnPc/DLC device was fabricated using thermal evaporation and magnetron sputtering techniques, and its fundamental optoelectronic properties were characterised. Key diode parameters including barrier height, ideality factor, reverse saturation current, series resistance, and shunt resistance were determined using several methods, such as TE, Ohm's Law, the modified Norde method, and the Mikhelashvili method. The results from these methods were found to be consistent with varying light intensities. Additionally, photodetector parameters of the MnPc/DLC device were measured at ±1 V under light intensities of 20, 40, 60, 80, and 100 mW/cm2, and the findings were compared with the literature. The maximum values for photocurrent, photoresponsivity, photosensitivity, specific detectivity, and on/off ratio were 6.41 × 10−2 A, 2.49 A/W, 2.02 × 105, 5.8 × 109 Jones and 2.06 × 103, respectively. Notably, the photocurrent, photoresponsivity, photosensitivity, and on/off ratio values were found to be significantly higher and more promising compared to those reported in the literature.

Enhanced electrical parameters of the Au/n-Si Schottky barrier diodes with graphite/graphane oxide doped PVC interlayer

In this work, Schottky Barrier diodes (SBDs) formed on n-Si substrates were created using polyvinyl-chloride (PVC) and graphite/graphene-oxide (Gt/GO) nanoparticles (NPs) doped PVC interlayers and the conduction mechanisms of the structures were compared to the reference Au/n-Si (MS) diode. The characterization methods, including x-Ray Diffraction (XRD), Field Emission Scanning Electron Microscope (FE-SEM), and Energy Dispersive x-Ray (EDX), were used to analyze Gt/GO NPs and examine their structural, morphological, and analytical properties. In addition to the standard I-V method, modified Norde and Cheung methods were applied to analyze the forward bias I-V characteristics to determine the impact of pure-PVC and (PVC: Gt-GO) interlayers’ main electronic parameters on the SBDs. The surface state density (N ss ) depending on energy was also determined from the forward bias current–voltage by considering the voltage-dependent ideality coefficient, n(V), and barrier height (BH), ΦB(V). The outcomes showed that, as compared to MS structures, both the pure-PVC and (PVC: Gt-GO) interlayer leads to a decrease of n, leakage-current, N ss , an increase of rectification ratio (RR), shunt-resistance (R sh ) and zero-bias barrier-height (Φ B0 ). The differences in the electronic parameters observed between the I-V, Norde, and Cheung functions indicate that these parameters are highly reliant on the voltage and the computation method utilized. The barrier inhomogeneities at the metal/semiconductor surface also affect the current-transport or conduction mechanisms.

Effect of the insertion of silver nanoparticles on the performance and electrical features of Ag/SiNWs Schottky diode

In this paper, we studied the effect of the passivation of silicon nanowires (SiNWs) by silver nanoparticles (AgNPs) on the efficiency of Ag/SiNWs/Si Schottky diodes. SiNWs are obtained by one-step Ag-assisted chemical etching method. AgNPs were deposited on SiNWs using an electroless dipping method. Schottky junction devices have been successfully made using silicon nanowires coated with silver nanoparticles. The current–voltage (I-V) characteristics of Ag/AgNPs-SiNWs Schottky diode have been investigated by varying the immersion time in silver nitrate solution from 1 to 5 min. The I-V characteristics presented in logarithmic scale confirmed the domination of SCLC conduction mechanism at high voltage. The ideality factor (n), height of potential barrier (φb) and series resistance (Rs) of diodes are calculated by adopting the Cheung method. Compared to the Ag/SiNWs Schottky junction, the diode that presents AgNPs at the interface shows a significant improvement in electrical parameters. The potential barrier reaches 1.09 eV and the ideality factor is reduced to 2.64 with the presence of AgNPs for an immersion time of 1 min. Norde’s equation has also been used to calculate the series resistance and the potential barrier. The results obtained by Norde method are slightly shifted compared to those found by Cheung functions while the findings concerning the optimization of the immersion time are practically the same.

Investigation of AlN-based Schottky type photodetector in visible light detection

In this study, we fabricated an AlN-based Schottky photodetector by thermal evaporation technique using commercial AlN/n-Si heterojunction which was fabricated by hydride vapor phase epitaxy. Thus, Au/Ti/AlN/n-Si heterostructure was obtained and tested for photodetector applications for various light power densities from 20 mW/cm2 to 100 mW/cm2 by I–V characteristics. Various parameters of heterostructure were extracted by thermionic emission theory, Norde and Cheung methods to clear the electrical properties of the Au/Ti/AlN/n-Si. Photodetection parameters such as responsivity, photosensitivity, and specific detectivity values were also studied depending on the changing light power density. The Au/Ti/AlN/n-Si photodetector revealed 1.36 A/W responsivity and 7.99 × 109 Jones specific detectivity values. The photoresponse time was investigated by light on-off transient measurements. The Au/Ti/AlN/n-Si photodetector exhibited fast and linear photoresponse to the illumination. The photocapacitance and photoconductance properties of the Au/Ti/AlN/n-Si photodetector were also studied. The results highlighted that Au/Ti/AlN/n-Si photodetector can be a good candidate for fast-response photodetection applications.

Experimental and Theoretical Investigation of Zr‐Doped CuO/Si Solar Cell

Copper oxide (CuO) is a nanostructured semiconductor material with the potential for solar energy conversion and can be suitable for solar cells when used as a thin film. Herein, nondoped and doped (doping ratios of 1%, 2%, and 3% zirconium [Zr]) CuO thin films on silicon (Si) with the spin‐coating technique are developed. Optical and topological characterizations of CuO thin films are examined by ultraviolet‐visible and X‐ray diffraction. The electrical properties of nondoped and Zr‐doped CuO/Si heterojunctions are investigated with experimental current–voltage measurements in the dark and under illuminated conditions. The electrical behavior of nondoped and Zr‐doped CuO/Si heterojunctions is obtained using the experimental J–V technique and computational Cheung–Cheung and Norde methods. A simulation based on nondoped and Zr‐doped CuO/n‐Si heterojunction solar cells using SCAPS‐1D is completed. Photovoltaic (PV) parameters of experimentally produced and theoretically calculated CuO and Zr‐doped CuO/Si heterojunction solar cells are compared. Accordingly, PV parameters of 1% Zr‐doped CuO/Si solar cells show the highest power conversion efficiency calculated as a function of interfacial defect density and hole carrier concentration.

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Silicene is a 2D monoatomic sheet of silicon and can be used for various applications such as degradation, therapy, and biosafety. Polyaniline (PANI) is a conducting polymer employed for electronic devices. In this study, we synthesized PANI–silicene composites and operated as an external interfacial layer between Al and different type substrates of p-Si and n-Si to compare Schottky-type photodiodes of PANI–silicene/n-Si and PANI–silicene/p-Si. The silicene structures were investigated using X-ray diffractometry (XRD) and scanning electron microscopy (SEM) techniques. Also, the light power intensity dependent of PANI–silicene/n-Si and PANI–silicene/p-Si photodiodes carried out in the range 0–100 mW/cm2 and I–t measurements utilized to determine the response time of the photodiodes. Basic parameters of devices such as ideality factors barrier, height, and series resistance were obtained by Norde and Cheung methods and thermionic emission (TE) theory from I–V graphs. While the PANI–silicene/n-Si exhibited high ideality factor values of 5.49, the PANI–silicene/p-Si photodiodes showed a low ideality factor of 1.48. The photodiode parameters such as detectivity and responsivity were calculated as 6.40 × 109 Jones and 38.9 mA/W for n-Si substrate and 78.2 mA/W and 8.81 × 109 Jones for p-Si substrate. The case of basic electrical properties for PANI–silicene composite interlayer-based photodiodes was analyzed in detail.

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO2/n-Si structures: optoelectronic situations

Abstract This study aims to examine the electrical, photosensitivity (S), photo-response (R), and photo-detectivity (D*) properties of Au/SiO2/n-type Si structures under different illumination intensities. The illumination-dependent properties of the Au/SiO2/n-type Si structure with SiO2 interlayer were obtained using current–voltage (I-V) characteristics. The ideality factors (n) and barrier heights (Φbo) values of Au/SiO2/n-type Si structures were obtained and compared from forward and reverse bias current–voltage (I-V) measurements at room temperature. Also, barrier heights (Φbo) and series resistance (R S ) values obtained from Norde method were compared with the values obtained from TE theory. It was observed that ideality factor and barrier height values obtained from forward bias region are higher than the values reverse bias. This means that the linearity or rectification feature in the reverse bias region is better than the forward bias region. Furthermore, photodiode values such as photo response (R), photosensitivity (S) and photodetectivity (D*) of Au/SiO2/n type Si structures were also examined depending on the light intensity. Consequently, the experimental results showed that the increase in reverse current with increasing light indicates that the Au/SiO2/n-type Si structures can be used in semiconductor technology as a photodiode, detector or sensor.

Electrical, structural and photovoltaic properties of acceptor dye modified Au/n-Ge heterostructure

n-Ge heterostructure is fabricated using organic dye interlayers such as sulforhodamine-G (SRG) using low-cost spin coating technique and explored its electrical and structural features. The I–V measurements of the Au/SRG/n-Ge heterostructure (HJ) show good rectification behavior. It has been noticed that the barrier height (0.73 eV) of the Au/SRG/n-Ge heterojunction was significantly higher than the Au/n-Ge Schottky diode (SD) (0.63 eV). Cheung's function and the Norde method has been utilized to evaluate the various barrier parameters to understand the non-ideal behavior of the contacts at higher bias region. The low value of the series resistance for HJ (53 Ω) is observed than compared to the SD without organic dye (2974 Ω). Barrier parameters evaluated from the Norde method were compared with those from the Cheung method and found that they confirmed the consistency of Schottky barrier parameters obtained from both techniques. The transport properties of the HJ and SD in the forward bias region are evaluated using the log (I) vs. log (V) plot. At larger forward bias voltages, a change in the drift of current conduction is observed from Ohmic current conduction to traps-assisted SCLC conduction. This may be ascribed to the presence of defects or traps at the n-Ge and SRG interface possibly associated with the organic dye. Also, the photovoltaic properties of the SRG/n-Ge heterostructures were evaluated at 100 mW/cm2 showing significant photoresponse indicates the usage of SRG dyes in photosensitive applications.

Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure

We fabricated a heterojunction structure composed of n-CdS and p-C10H10N2 films. The CdS film was prepared using the CBD method, while the C10H10N2 film was prepared using the spin coating method. Later, we performed the current-voltage (I-V) measurement of this PN diode which we made using Keithley 2400 sourcemeter. As can be seen from the logI-V diagram, this heterojunction structure exhibits rectifying properties. Using traditional methods, an ideality factor (n) of 1.93 and a barrier height value (Φb) of 0.79 eV were determined. An ideality factor of more than one indicates non-ideal I-V behavior in the CdS/C10H10N2 heterojunction diode formed. The interface layer, interface states and series resistance are some of the causes of this deviation. Moreover, Cheung's functions and a modified Norde function were used to determine the diode parameters, such as ideality factor, barrier height, and series resistance. With the Cheung method, n=4.33, series resistance (RS)=168.65 kΩ and Φb=0.62 eV were found. Additionally, RS=686.08 kΩ and Φb=0.78 eV were found by the Norde method. Consistent barrier height values were found in all methods through comparison, suggesting compatibility. However, it was discovered that the series resistance values yielded by the Norde function exceeded those obtained by the Cheung functions.

Optoelectric response of Schottky photodiode with a PVP: ZnTiO3 nanocomposite as an interfacial layer

This work aims to study the photo-response of the fabricated silicon-based Al/PVP:ZnTiO3/p-Si photodiode (PD) in a wide range of illumination intensities. To make a metal-polymer/nanocomposite-semiconductor (MPS) PD, a thin film of PVP:ZnTiO3 nanocomposite is deposited at the interface of the metal-semiconductor (MS) structure. Information regarding the preparation and manufacturing procedures is provided. Through the examination of the current-voltage (I–V) behavior, essential electrical properties such as leakage current (I0), barrier height (ΦB0), ideality factor (n), series and shunt resistances (Rs, Rsh), energy-dependent interface states density (Nss), photocurrent (Iph), and photosensitivity (S) are acquired. The thermionic emission (TE) theory, along with the Norde and Cheung methods, is employed to calculate the parameters ΦB0, n, and Rs. The values of ΦB0 and Rs are decreased by raising the illumination intensity while the n value is increased. In addition, the illumination coefficient (α) and the value of ΦB0 in the ideal case are determined from the ΦB0-P and ΦB0-n plots. The efficiency (η) of the sample is calculated at each illumination intensity whose maximum value is 2.30 % at the intensity of 450 mW/cm2. The illumination-dependent photocurrent is investigated at the negative bias region that shows a good linear behavior in the ln(Iph)-ln(P) profile. The photosensitivity (S) of the fabricated PD is obtained as ⁓500 which is, compared with previous PDs. These findings demonstrate that the developed silicon-based MPS-type PD with a structure of Al/PVP:ZnTiO3/p-Si exhibits a good photo-response and can successfully replace traditional MS PDs in optoelectronic and photovoltaic applications.

ZnO-SnO2 binary oxide nanocomposite photodiode and photonic applications

In this study, Al/p-Si/ZnO-SnO2/Al was created by fabricating a binary oxide nanocomposite photodiode device. The electrical properties of the fabricated photodiode were investigated by current–voltage and capacitance–voltage measurements. The ideality factors, barrier heights, and series resistance values of the photodiode were calculated comparatively using current–voltage characteristics as well as the Cheung-Cheung and Norde methods. The ideality factor values were calculated in the ranges of 4.16–6.07 and 2.14–5.46 for the I-V and Cheung-Cheung methods, respectively. The barrier height was calculated in the ranges of 0.17–0.19 from I-V, 0.42–0.72 for the Cheung-Cheung method, and 0.57–0.61from the Norde method. The lowest series resistance values were calculated as 2658 Ω according to Cheung and 38.74 Ω according to Norde. The detector properties of the photodiode were analyzed by calculating the responsivity (R) and detectivity (D*) values. The highest R and D* values were calculated as 3069 mA/W and 2.36x1011 Jones, respectively.

Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

GO-doped LaB6 nanocomposite-based Al/p-Si/GO:LaB6/Al photodiodes were fabricated for the study. The electrical properties of the fabricated photodiodes were subjected to current-voltage and capacitance-voltage measurements. The ideality factors, barrier heights and series resistance values of photodiodes were calculated and compared using the Cheung-Cheung and Norde methods approaches. The lowest ideality factor values were calculated to be 4.75, 4.00 and 9.21 in the samples doped with GO at 1 %, 5 % and 10 %, respectively, and the highest barrier height values were calculated from the Norde function to be 0.75, 0.64 and 0.75 eV, respectively Additionally, the responsivity (R) and detectivity (D) values of the diodes were calculated. The R values of 1 %, 3 % and % 5 doped diodes were calculated as 2153, 6001 and 2042 mA/W at, 100 mW/cm2, respectively. The D* values of 1 %, 3 % and % 5 doped diodes are calculated as 1.38 × 1011, 3.85 × 1011 and 1.31 × 1011 Jones at 100 mW/cm2, respectively. The interface state (Nss) of 1 %, 3 % and % 5 doped diodes were calculated as 2 × 1013, 1.25 × 1013 and 1.06 × 1013eV−1 cm−2, at 100 mW/cm2, respectively. It can be concluded that the diodes produced in this study have potential for use in optoelectronic applications.

The photodetection characteristics of a Brilliant Blue-FCF implemented device for organic-based optoelectronic applications

The optical properties of sol-gel-based brilliant blue-FCF (BB-FCF) thin film are analyzed for photodetection applications. The effect of the presence of the BB-FCF interface on the microelectronic characteristics of the designated Cu/BB-FCF/n-Si device is elucidated by comparing to its reference Cu/n-Si device. The systematic investigation of photodetection properties of the integrated device is performed between the 20–100 mW/cm2 illumination intensities. First, the optical features of spin-coated BB-FCF thin film are investigated by UV–Vis measurements, and the absorbance of the film is elucidated by the efficient optical absorption in the wavelength of ∼350–700 nm with the calculated optical indirect band gap of 1.72 eV. Next, the frequency-dependent capacitive behavior, charge transport mechanism, and the electronic parameters of both the rectifying Cu/n-Si and the implemented Cu/BB-FCF/n-Si devices like the ideality factor, the barrier height, and series resistance are estimated using the Thermionic emission and Norde's function methods. Subsequently, the photodetection properties of the engineered device with a BB-FCF functional dye interface are studied under a solar simulator with different power intensities. The effect of the illumination intensity and applied reverse bias voltage on the figures of merit, including photoresponsivity, photodetectivity, response speed, and linear dynamic property, are analyzed under an illumination of 20–100 mW/cm2. The designated device with a BB-FCF interface has achieved significant and fast, stable on/off switching sensitivities, with 524 ms and 629 ms rising and falling times, respectively. Therefore, the prepared BB-FCF-based device has good and stable photoresponse performance, and the Cu/BB-FCF/n-Si architecture device may be a strong candidate for photonic and optoelectronic device applications, particularly in rapidly developing organic material-based device technology.

Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode

In this study, the production and electrical characterization of Schottky circuit elements of Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality factor (n), barrier height (Φb) and series resistance of Au/CoO/p-Si/Al structures were calculated from the forward bias I-V characteristics of the diode using the different methods such as Thermionic Emission method (TE), Cheung functions and Norde method. The variations of diode parameters from I-V measurements depending on the temperature were examined. In addition, diffusion potential (Vd), barrier height (Φb), Fermi energy level (Ef) and free carrier concentration (Na) were calculated from the C-V measurements of the diode. The variations of these values with frequency were examined from the C-V measurements.

Electrical and optical properties of p-Si based structures with lead oxide interfaces

Lead oxide thin film was performed by evaporation technique on the p-Si type substrate. The studied film was characterized using the UV–VIS spectroscopy method. The reflectance and transmittance measurements conducted at the normal incident of light between 300 and 1000 nm were analyzed to determine the optical dispersion of the film. It was estimated that the film' optical transmittance was 77% in the visible range The obtained absorption coefficient greater than 104 cm−1 showed that the electron transition was direct. The optical band gap energy value of the film was computed as 3.22 eV. Also, the electrical features of Al/PbO/p-Si diode were examined by observing its current–voltage (I-V) behavior at room temperature. Zero-bias barrier height (Φb0), ideality factor (n), series resistance (Rs) were obtained using the conventional Norde, I-V and Cheung methods. Also, the diode’s dominant current conduction mechanisms were examined using the forward bias I-V data.

Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode

AbstractIn this special work, two types of material, which are undoped and Mn doped TiO2thin films, have been produced by spin coating technique, and then their structural, morphological and optical properties have been measured at different Mn doping rates. Four different doping ratios, undoped, 1, 3 and 5% Mn doped TiO2have been both experimentally and theoretically investigated and some significant enhancements have been reported. The results of X-ray diffraction (XRD) such as dislocation density, strain, and crystallite size have indicated that undoped, 1, 3 and 5% Mn doped TiO2thin films had the phase of anatase at 450 °C. It has been observed that the peak intensity of 3% Mn doped TiO2films has decreased compared to undoped and 1% Mn doped TiO2while the peak intensity has increased for 5% Mn doped TiO2. The refractive indices and dielectric coefficients of the undoped and Mn doped TiO2thin films have also been calculated. The undoped and Mn doped TiO2/p-Si heterojunction diodes has exhibited photosensitive behaviour in the illuminated environment. 1% Mn doped TiO2/p-Si heterojunction diode indicated the highest photocurrent. The electrical parameters of all diodes have been calculated and compared to the conventionalJ–Vand Norde methods. Additionally, 1% Mn doped TiO2/p-Si heterojunction diode has been modelled by using the SCAPS-1D program, andJphvalues have also been calculated based on the shallow donor density (ND). The experimental and theoreticalJphvalues of this diode were found to be compatible with each other.

Effect of perylenetetracarboxylic dianhydride on the main electrical properties and interface states of Al/p-Si structures

In this our study, we were examined role on the electrical characteristics and interface state densities of Al/p-type Si metal semiconductor (MS) structures of perylenetetracarboxylic dianhydride (PTCDA) used at the interface as a thin film layer. The PTCDA thin film layer was coated on p-type Si by Spin Coating method. The main electrical characteristics such as ideality factors (n), barrier height (Φbo), series resistances (RS), and interface states of Al/p-type Si and Al/PTCDA/p-type Si devices were calculated using current–voltage (I–V) and capacitance–voltage (C–V) characteristics at the room temperature. The values of n, Φbo, RS which basic electrical parameters were calculated and compared with each other using different calculation methods such as Cheung and Norde methods. Additionally, the interface state densities (NSS) as a function of energy distributions (ESS-EV) were calculated from the I–V measurements by accounting for the bias dependence of the effective barrier heights (Φe) and ideality factor n(V). The experimental results showed that while the evaluated values of NSS has increased exponentially from 1.56x1015 cm−2eV−1 in (0.730- EV) eV to 3.09x1015 cm−2eV−1 in (0.501- EV) eV for Al/p-Si Structure, the NSS has increased exponentially with bias from of 2.05x1015 cm−2eV−1 to 6.50x1015 cm−2eV−1 for Al/PTCDA/p-Si structure in the same interval. As conclusions, we can say that PTCDA thin film layer play important roles on the electrical characteristics and interface state densities of metal semiconductor (MS) structures such as Al/p-type Si.