Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO2/n-Si structures: optoelectronic situations

Abstract

Abstract This study aims to examine the electrical, photosensitivity (S), photo-response (R), and photo-detectivity (D*) properties of Au/SiO2/n-type Si structures under different illumination intensities. The illumination-dependent properties of the Au/SiO2/n-type Si structure with SiO2 interlayer were obtained using current–voltage (I-V) characteristics. The ideality factors (n) and barrier heights (Φbo) values of Au/SiO2/n-type Si structures were obtained and compared from forward and reverse bias current–voltage (I-V) measurements at room temperature. Also, barrier heights (Φbo) and series resistance (R S ) values obtained from Norde method were compared with the values obtained from TE theory. It was observed that ideality factor and barrier height values obtained from forward bias region are higher than the values reverse bias. This means that the linearity or rectification feature in the reverse bias region is better than the forward bias region. Furthermore, photodiode values such as photo response (R), photosensitivity (S) and photodetectivity (D*) of Au/SiO2/n type Si structures were also examined depending on the light intensity. Consequently, the experimental results showed that the increase in reverse current with increasing light indicates that the Au/SiO2/n-type Si structures can be used in semiconductor technology as a photodiode, detector or sensor.