Abstract
In this study, the production and electrical characterization of Schottky circuit elements of Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality factor (n), barrier height (Φb) and series resistance of Au/CoO/p-Si/Al structures were calculated from the forward bias I-V characteristics of the diode using the different methods such as Thermionic Emission method (TE), Cheung functions and Norde method. The variations of diode parameters from I-V measurements depending on the temperature were examined. In addition, diffusion potential (Vd), barrier height (Φb), Fermi energy level (Ef) and free carrier concentration (Na) were calculated from the C-V measurements of the diode. The variations of these values with frequency were examined from the C-V measurements.
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