Abstract
In this study, morphological properties and Schottky diode application of mpg-C3N4 material were investigated. XRD, SEM and TEM analyzes of this material were performed. When the SEM image is examined, it is seen that mpg-C3N4 particles are coated on the surface homogeneously. The p-Si crystal was used as the base material and mesoporous graphitic carbon nitride material mpg-C3N4 was coated on the crystal with spin coating. Thus, reference and mpg-C3N4/p-Si heterojunctions were fabricated. Using the current-voltage (I–V) measurements of the diode, the ideality factory (n) and barrier height (Φb) values were calculated at the room temperature. These values of Ni/mpg-C3N4/p-Si/Al heterojunction diode were determined as n = 1.25 and Φb = 0.83 eV by the Thermionic Emission (TE) method. Furthermore diode parameters (n, Φb and series resistance (Rs) were determined with Cheung and Norde functions. Also capacity-voltage (C–V) measurements of this device were taken for different frequency values. Using this measurements carrier concentration (Na), barrier heights (Φb), Fermi energy level (Ef) and diffusion potential (Vd) values were determined.
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