Influence of Mn doping on electrical properties of TiO2/Si heterojunction diode

Abstract

AbstractIn this special work, two types of material, which are undoped and Mn doped TiO2thin films, have been produced by spin coating technique, and then their structural, morphological and optical properties have been measured at different Mn doping rates. Four different doping ratios, undoped, 1, 3 and 5% Mn doped TiO2have been both experimentally and theoretically investigated and some significant enhancements have been reported. The results of X-ray diffraction (XRD) such as dislocation density, strain, and crystallite size have indicated that undoped, 1, 3 and 5% Mn doped TiO2thin films had the phase of anatase at 450 °C. It has been observed that the peak intensity of 3% Mn doped TiO2films has decreased compared to undoped and 1% Mn doped TiO2while the peak intensity has increased for 5% Mn doped TiO2. The refractive indices and dielectric coefficients of the undoped and Mn doped TiO2thin films have also been calculated. The undoped and Mn doped TiO2/p-Si heterojunction diodes has exhibited photosensitive behaviour in the illuminated environment. 1% Mn doped TiO2/p-Si heterojunction diode indicated the highest photocurrent. The electrical parameters of all diodes have been calculated and compared to the conventionalJ–Vand Norde methods. Additionally, 1% Mn doped TiO2/p-Si heterojunction diode has been modelled by using the SCAPS-1D program, andJphvalues have also been calculated based on the shallow donor density (ND). The experimental and theoreticalJphvalues of this diode were found to be compatible with each other.