Norde Functions Research Articles

Electric and dielectric responses of Au/n-Si structure by Mn doped PVC interfacial layers

This paper has investigated and compared the impact of polyvinyl chloride (PVC) without/with manganese (Mn) metallic nanoparticles interfacial layer on the electric and impedance characteristics of Schottky diode (SD) with a structure of Au/n-Si (MS). The structures of these two metal-polymer-semiconductor (MPS) SDs are Au/PVC/n-Si and Au/PVC:Mn/n-Si. A detailed description of the SDs manufacturing process is given. The x-ray diffraction (XRD) analysis, Scanning Electron Microscope (FE-SEM) images, and Electron Dispersive x-ray (EDX) spectroscopy are three methods that have been utilized to examine mean size of crystallite, morphology of surface, purity specification. The fundamental electronic variables of these devices are ascertained and contrasted with one another using the I-V characteristic measurement at ±6 V. Ohm’s law, Thermionic Emission (TE) theory, modified Norde, and Cheung functions are used to calculate the SDs’ leakage current (I0), ideality coefficient (n), potential barrier height (BH), shunt (Rsh), and series (Rs) resistances. Investigations are conducted on the energy dependence of surface states density (Nss) and the current conduction mechanisms (CCMs) for both reverse and forward biases. These interfacial layers are known to decrease the n, Rs, and Nss. The PVC polymer interlayer leads to improve the efficiency of the MS-type SD, but it does not when doped by Mn nanoparticles. Additionally, by measuring impedance at a bias of 1.5 V and 100 Hz-1 MHz frequency range, the frequency dependence of dielectric properties of the prepared SDs is studied. The dielectric permittivity, dielectric loss tangent, electronic modulus, and ac electronic conductivity of these SDs are all studied.

Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer

The study examines the surface topology, optical, structural and electrical characteristics of e-beam evaporated manganese dioxide (MnO2) films on p-InP using AFM, FESEM, UV–Vis, XRD, XPS and I–V procedures. The surface roughness of the MnO2 was smooth from AFM and FESEM analysis. The optical bandgap of MnO2 film was extracted from Tauc's plot. The outcomes endorse that the MnO2 layer deposited on InP. Then, the Ti/MnO2/p-InP heterostructure (HS) was created with an MnO2 interlayer to check the consequence of MnO2 on the electrical features of the Ti/p-InP Schottky diode (SD). The I–V results demonstrated that the higher Φb is acquired for the HS (0.90 eV) than the SD (0.84 eV), implying the MnO2 layer alters the Фb. Also, the Фb, ‘n’ and RS of the SD and HS can be determined by utilizing Cheung's and Norde's functions. The estimated Фb was almost similar, indicating the methodologies applied here are sturdy and effective. The determined NSS of the HS is lesser than the SD, implying that the MnO2 interlayer has a significant role in the decrease in NSS. The forward bias log (I)-log(V) plot of the SD and HS indicates that the ohmic behavior and space charge limited the conduction process at lower-bias and higher-bias segments, respectively. The study outcomes suggested that the transition metal oxide MnO2 layer would be favourable for creating MIS devices.

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

In this paper, an organic semiconductor, N-(2-((pyren-4-yl)methyleneamino)ethyl)-5- nitropyridin-2-amine (Pyr-Pic), was synthesized and was used as an interfacial organic layer to fabrication of Al/Pyr-Pic/p-Si/Al diode. The device’s characteristic parameters were determined under various operating situations using current–voltage (I-V) measurements. Thermionic emission theory (TE), the Cheung methodology, and Norde functions were the three methods used to determine the device’s electrical properties, such as the ideality factor, barrier height, and series resistance. Based on the I-V measurements conducted under illumination circumstances, the fabricated device exhibits photoresponse properties in the reverse bias region. An examination of the forward log(I)-log(V) plot of the Al/Pyr-Pic/p-Si diode indicated that ohmic conduction dominates carrier transport in the lower bias regions, while the space-charge-limited current (SCLC) governs transport in the medium bias regions, and the trap-charge limit current (TCLC) mechanism is responsible for transport in the higher bias regions. The current voltage mechanisms in the reverse bias area can be characterized by using Poole–Frenkel emission (PFE) and Schottky emission (SE) theories. The device exhibits photovoltaic characteristics when it is illuminated through an Al electrode. The typical photovoltaic parameters were estimated at room temperature and under illumination conditions.

Electrical Characteristics of Cadmium Sulfide/4-Amino-2-Methyl-Quinoline Heterojunction Structure

We fabricated a heterojunction structure composed of n-CdS and p-C10H10N2 films. The CdS film was prepared using the CBD method, while the C10H10N2 film was prepared using the spin coating method. Later, we performed the current-voltage (I-V) measurement of this PN diode which we made using Keithley 2400 sourcemeter. As can be seen from the logI-V diagram, this heterojunction structure exhibits rectifying properties. Using traditional methods, an ideality factor (n) of 1.93 and a barrier height value (Φb) of 0.79 eV were determined. An ideality factor of more than one indicates non-ideal I-V behavior in the CdS/C10H10N2 heterojunction diode formed. The interface layer, interface states and series resistance are some of the causes of this deviation. Moreover, Cheung's functions and a modified Norde function were used to determine the diode parameters, such as ideality factor, barrier height, and series resistance. With the Cheung method, n=4.33, series resistance (RS)=168.65 kΩ and Φb=0.62 eV were found. Additionally, RS=686.08 kΩ and Φb=0.78 eV were found by the Norde method. Consistent barrier height values were found in all methods through comparison, suggesting compatibility. However, it was discovered that the series resistance values yielded by the Norde function exceeded those obtained by the Cheung functions.

Evaluation of synthesized new cellulose derivatives to make diodes and investigation of electrical and photoelectrical characteristics of these diodes

Firstly, two new cellulose derivatives (CelB33′44′TD and Cel44′OA) were synthesized, which were confirmed by FTIR and 13C CP-MAS NMR spectra. These derivatives were then used in the construction of new diodes (Au/CelB33′44′TD/p-Si and Au/Cel44′OA/p-Si). Later, the atomic force microscope (AFM) images of the interface layers were taken, and the current–voltage (I–V) graphs of the diodes were determined both in the dark and under different illumination intensities (DIIs). Using the Bethe's thermionic emission (TE) theory the ideality factors and barrier heights of the diodes, using the Cheung & Cheung functions the ideality factors, series resistances and barrier heights of the diodes, and using the Norde function the barrier heights and series resistances of the diodes were calculated. Finally, the capacitance–voltage (C–V) and conductance–voltage (G–V) graphs of the diodes at different frequencies (DFs) were examined and some frequency-dependent electrical parameters of the diodes were calculated using the 1/C2–V plots.

Characterization of the electrical properties of MPS schottky structures incorporating Fe doped polyvinyl chloride (PVC)

This paper explores the effects of the organic interfacial layer on the electrophysical characteristics of Schottky barrier diodes (SBDs). Three types of SBDs were fabricated: Au-Si (referred to as MS), Au/PVC/Si (referred to as MPS1), and Au-/PVC:Fe/Si (referred to as MPS2). Fe nanopowders were subjected to analysis using XRD, SEM, and EDX techniques to investigate their structural and optical characteristics. To investigate the conduction mechanisms of these diodes, I-V characteristics were examined using thermionic-emission (TE), Cheung, and Norde functions. The surface-state density (N ss ) distribution of energy was determined by analyzing the current–voltage (IF-VF) curve under forward bias conditions. This analysis considered the voltage-dependent barrier height (BH) and ideality factor (n(V)). The results demonstrated that the polymeric interlayer without Fe nanoparticles reduced N ss by a factor of 7, while the presence of Fe nanoparticles led to a two-order magnitude decrease, resulting in improved efficiency in comparison with MS structures. The obtained results indicated that including a polymeric layer in MPS structure enhanced their electrophysical features compared to MS diodes, and significantly increased rectification by 15–45 times. In summary, the existence of an organic interfacial layer significantly altered the conduction mechanisms and electrophysical characteristics of MPS diodes. It was found that the addition of Fe nanoparticles in the interlayer resulted in substantial improvements in N ss , efficiency, rectification, and conduction characteristics compared to MS diodes.

Fabrication of photodiodes based on graphene oxide (GO) doped lanthanum hexaboride (LaB6) nanocomposites

GO-doped LaB6 nanocomposite-based Al/p-Si/GO:LaB6/Al photodiodes were fabricated for the study. The electrical properties of the fabricated photodiodes were subjected to current-voltage and capacitance-voltage measurements. The ideality factors, barrier heights and series resistance values of photodiodes were calculated and compared using the Cheung-Cheung and Norde methods approaches. The lowest ideality factor values were calculated to be 4.75, 4.00 and 9.21 in the samples doped with GO at 1 %, 5 % and 10 %, respectively, and the highest barrier height values were calculated from the Norde function to be 0.75, 0.64 and 0.75 eV, respectively Additionally, the responsivity (R) and detectivity (D) values of the diodes were calculated. The R values of 1 %, 3 % and % 5 doped diodes were calculated as 2153, 6001 and 2042 mA/W at, 100 mW/cm2, respectively. The D* values of 1 %, 3 % and % 5 doped diodes are calculated as 1.38 × 1011, 3.85 × 1011 and 1.31 × 1011 Jones at 100 mW/cm2, respectively. The interface state (Nss) of 1 %, 3 % and % 5 doped diodes were calculated as 2 × 1013, 1.25 × 1013 and 1.06 × 1013eV−1 cm−2, at 100 mW/cm2, respectively. It can be concluded that the diodes produced in this study have potential for use in optoelectronic applications.

The photodetection characteristics of a Brilliant Blue-FCF implemented device for organic-based optoelectronic applications

The optical properties of sol-gel-based brilliant blue-FCF (BB-FCF) thin film are analyzed for photodetection applications. The effect of the presence of the BB-FCF interface on the microelectronic characteristics of the designated Cu/BB-FCF/n-Si device is elucidated by comparing to its reference Cu/n-Si device. The systematic investigation of photodetection properties of the integrated device is performed between the 20–100 mW/cm2 illumination intensities. First, the optical features of spin-coated BB-FCF thin film are investigated by UV–Vis measurements, and the absorbance of the film is elucidated by the efficient optical absorption in the wavelength of ∼350–700 nm with the calculated optical indirect band gap of 1.72 eV. Next, the frequency-dependent capacitive behavior, charge transport mechanism, and the electronic parameters of both the rectifying Cu/n-Si and the implemented Cu/BB-FCF/n-Si devices like the ideality factor, the barrier height, and series resistance are estimated using the Thermionic emission and Norde's function methods. Subsequently, the photodetection properties of the engineered device with a BB-FCF functional dye interface are studied under a solar simulator with different power intensities. The effect of the illumination intensity and applied reverse bias voltage on the figures of merit, including photoresponsivity, photodetectivity, response speed, and linear dynamic property, are analyzed under an illumination of 20–100 mW/cm2. The designated device with a BB-FCF interface has achieved significant and fast, stable on/off switching sensitivities, with 524 ms and 629 ms rising and falling times, respectively. Therefore, the prepared BB-FCF-based device has good and stable photoresponse performance, and the Cu/BB-FCF/n-Si architecture device may be a strong candidate for photonic and optoelectronic device applications, particularly in rapidly developing organic material-based device technology.

Synthesis of TiO2 Nanotubes and Photodiode Performance

In this study, titanium dioxide (TiO2) nanotubes were produced by anodization method using glycerol-based electrolyte. Structural characterization was investigated with SEM images and XRD pattern. The rectifying properties of n-type semiconductor TiO2 nanotubes were investigated. Current-voltage (I-V) measurements of the Pt/TiO2 nanotubes/Ti device were made at room temperature, in the dark and under different illumination conditions. The basic diode parameters were calculated by using thermionic emission (TE), Cheung and Norde functions from the I-V measurements of the devices in dark conditions. The ideality factors and barrier height of the Pt/TiO2 nanotubes/Ti device were calculated 1.25 and 0.91 eV, respectively by the TE method. According to the results obtained, the Pt/TiO2 nanotubes contact has a rectifying feature. In addition, the photovoltaic properties of the devices were examined by making I-V measurements at illumination intensities between 30 and 100 mW/cm2. As a result, it has been evaluated that the device can also be used as a photodiode.

Structural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B)

The effect of erythrosine B (ERY) organic material as an interface layer on the electronic characteristics of the Al/p-Si junction is examined in the present work. AFM, NMR, UV–Vis and FTIR measurements have been conducted on the ERY dye molecule. The ERY film on the surface of the substrate is coated with nanoparticles, according to the surface analysis performed using the AFM technique. The basic diode parameters of Al/p-Si and Al/ERY/p-Si junctions were measured by utilizing current-voltage (I–V) and capacitance-voltage (C-V) techniques. The junctions with and without organic interfacial layers were found to have ideality factors of 1.931 and 1.925, respectively. For MS and MIS contacts, the estimated values of barrier height were 0.592 eV and 0.937 eV, respectively. Additionally, the series resistances for the MS and MIS structures by utilizing Norde function, were determined to be 0.14 kΩ and 322.85 kΩ, respectively. In addition, the reverse bias 1/C2-V characteristics were used to analyze the barrier height values and compare the findings to those from I-V method. The experimental findings demonstrated that the Al/ERY/p-Si MIS diode has a barrier height that is remarkably greater than that of the reference Al/p-Si junction. Placement of the ERY dye interlayer between a metal and a semiconductor could enhance and regulate the performance and characteristic of these types of junctions.

The Comparison of the Temperature Susceptibility of the Serial Resistance Effect of Au/n-GaAs Type M/S Structures

To enable comparison with the literature, this study seeks to assess the temperature susceptibility of serial resistance (Rs) features of the Au/n-GaAs type M/S structure, which is acceptable the benchmark sample. The serial resistance features of the sample were computed separately withal principal of Ohm, Norde, and Cheungs' functions. The current-voltage (I-V) data used in order to compute were evaluated at the voltage values between +2V and -2 V and temperature values between 120K and 360K in 60K steps. Each computation method was also compared one another other. As a result, the fact that the Rs values computed using principal of Ohm, Norde functions and Cheungs' functions tended to reduce with rising temperature, as anticipated by the literature results. In addition, it was determined that, with only tiny variations, the temperature susceptibility of Rs is consistent across all computation methods. In addition, as a result of the comparison with the literature, it was concluded serial resistance is less of an issue when a polymer interfacial layer is present at the metal-semiconductor contact region. The Rs parameter of the M/S structure is, in essence, a sensitive function of temperature and input voltage.

Analysis of Series Resistance's (RS) Impact on Ag/Perylene/n-Si Schottky Barrier Diode (SBD) in Various Techniques

The purpose of this research is to experimentally examine how Rs affects the I-V curves of Ag/Perylene/n-Si SBD. Various plots of the experimental I-V measurements with the forward voltage are wielded in order to determine the parameter Rs. The I-V properties of Ag/Perylene/n-Si SBD was evaluated at room temperature (RT) based on Thermionic-Emission (TE) model. We specified the Rs values using Ohm law, Cheungs’, and modified Norde functions. We compared the Rs values utilized various techniques. Modified Norde functions apply to the ln I-V graph's all forward voltage region. On the other hand, Cheung's approaches are just feasible in the non-linear section in the high voltage region. The Rs values obtained from various techniques are distinct and are dedicated in the table. The reason for this inconsistency is shown in our research. It is evident that the values of the Rs determined using various approaches are in good accordance with one another. The Ohm's law derived from sufficiently high forward voltages is the one among them that is the most straightforward, precise, and dependable. It was demonstrated by the I-V data that the dispersion of Rs is a key factor affecting the electrical properties of diodes.

Investigation of the Electrical Properties of PAN-GO/p-Si Schottky Diode

In this article, the electrical properties of PAN-GO/p-Si Schottky diode were investigated in the dark at room temperature. Field-emission scanning electron microscopy (FE-SEM) was utilized to study the structure of the PAN:GO interfacial layer. Diode parameters were calculated according to thermionic emission theory. By using the I-V characteristic of the prepared PAN-GO diode, the ideality factor (n), barrier height (ФB) and series resistance (Rs) values were evaluated with the I-V method and Norde functions. The barrier height values calculated with the I-V and Norde function were found to be 0.767 eV and 0.761 eV, respectively. The ideality factor was found to be 2.078 from the I-V method. The series resistance value of the diode was calculated as 42 kΩ using Norde functions. Energy-dependence profile of interface state density was determined from the current-voltage characteristics by considering the voltage-dependence of barrier height and ideality factor The interface state density (Nss) values of the PAN-GO/p-Si Schottky diode are 9.5x1011 eV-1cm-2 for 0.35-Ev eV and 1.03x1011 eV-1cm-2 for 0.74-Ev eV. Experimental results approved that the PAN-GO interfacial layer improved the performance of metal-semiconductor Schottky diode in respect of low ideality factor, interface state density, and high barrier height and rectification rate.

Investigation of photon-induced effects on some diode parameters and negative capacitance of the Schottky structure with Zn-doped organic polymer (PVA) interface

Variation in the electrical parameters depending on illumination and the formation of negative capacitance (NC), and inductive behavior (IB) of Schottky structures interlaid with Zn:PVA, were executed by current/impedance-voltage (I/Z-V) measurements in the dark and under 200 mW cm−2 illuminance. To designate the voltage or calculation method effects on the ideality factor (n), barrier height (BH-Φ B ), and series resistance (R s ), these parameters were extracted from different methods. These parameters extracted through the Thermionic-emission (TE) theory, Ohm’s law, Norde and Cheung functions were compared with each other. The reverse bias ln(I R )−V R 0.5 plots were also drawn to designate the validity of Poole-Frenkel and Schottky emissions. In Z-V measurements, NC and related IB phenomena were observed at 500 kHz-fixed frequency in the dark and under illuminance. The interface states (D it ) variation depending on energy and voltage was obtained using I-V and C/G-V measurements and related equations. The calculations of the diffusion-potential (V D ), acceptor-atoms (N A ), Fermi-energy (E F ), and Φ B (C-V) values were performed by fitting the observed linear in the reverse bias C −2 -V plot. A detailed analysis of NC was performed via the drawn C/(G/ω)-I plots for positive voltages. All experimental results show that the used calculation method, illumination, and voltage are highly effective on the electrical parameters.

The electrical response of the Au/Mn2Mo6S8/p-Si diode under different physical stimuli

Mn2Mo6S8 material was synthesized by solid state synthesis method and coated on p-Si by thermal evaporation method to produce Au/Mn2Mo6S8/p-Si photodiode. Morphological characterization was performed by taking XRD and EDX analyzes and SEM images, and the crystal structure of the material was seen. Electrical characterization was performed by various methods (TE, Cheung and Norde functions) by taking temperature-dependent I-V measurements between 100 and 340 K under dark condition. The I-V measurements were made in various illuminations at room temperature and the photo response of the device was examined. The devices capacitor properties were calculated by making C-V measurements at various frequencies. The results showed that the I-V characteristic of the Au/Mn2Mo6S8/p-Si device were strongly dependent on temperature and the C-V characteristic was strongly frequency dependent. The results revealed that it is a suitable candidate material for optoelectronic devices.

Some Electrical and Photoelectrical Properties of Conducting Polymer Graphene Composite /n-Silicon Heterojunction Diode

In this study, polythiophene-graphene (PTh-G) composite thin film was prepared on the n-type silicon (n-Si) semiconductor wafer by the spin coating method. Subsequently, the current-voltage (I-V) measurements were made on the fabricated Au/PTh-G/n-Si/Al device to ascertain the impact of the PTh-G interfacial layer on the device performance. The main device parameters such as ideality factor (n), barrier height (b), series resistance (Rs) were calculated by using the thermionic emission (TE) and Norde functions, and then, the obtained results were discussed in detail. Additionally, the capacitance-voltage (C-V) characteristic of the device was examined as a function of the frequency, and the device parameters such as diffusion potential (Vd), Fermi energy level (Ef), carrier concentration (Nd), b were detemined. Finally, the light intensity-dependent I-V measurements were taken to obtain information about the photoelectrical characteristics of the fabricated device. The obtained results have shown that the prepared composite material has a good potential to be used in optoelectronic applications such as photodiode, and photodetector.

The synthesis and photoelectrical performances of perylenediimide-based devices as an interface layer in metal-organic-semiconductors

The symmetric and asymmetric perylenediimide (PDI)-based organic ligands Ph-PDI-Ph (1), Pyr-PDI-Pyr (2), and Pyr-PDI-Ph (3) were synthesized. Au/(Pyr-PDI-Ph)/p-Si (D1), and Au/(Ph-PDI-Ph)/p-Si (D2) devices were fabricated using thermal evaporation and their photodiode performances were examined under the irradiation of 100 mW.cm−2 at −2 V. In addition to the analysis of photodiode performances, the electrical properties depending on temperature and frequency of these structures were calculated using three different methods, which are the thermionic emission, Norde function, and Cheung&Cheung function. Furthermore, the molecular geometry, electronic absorption spectra, HOMO-LUMO and MEP surface analysis of the molecules mentioned were computed using the DFT/B3LYP method with 6-31 G (d,p) basis set and DFT calculations supported both the non-planar structures or propeller structures and compatibility of the theoretical results with the experimental data. The results supported that the fabricated D1 and D2 devices can form a basis for practical applications in optoelectronic device applications, especially photodiodes and photodetectors.

Analysis of the temperature dependent electrical parameters of the heterojunction obtained with Au nanoparticles decorated perovskite strontium titanate nanocubes

Strontium titanate (STO) is one of the important members of the perovskite family and has a wide range of applications in optoelectronics. In this study, the rectifying properties of the heterojunction produced by gold (Au) decorated STO were investigated. Morphological and structural characterization of Au-STO material coated as a thin film, such as SEM, TEM, XRD was performed and the results showed that this structure is a suitable material for heterojunction structures. Current-voltage (I-V) measurements of Ni/Au-STO/n-Si heterojunction devices obtained by coating the Si surface with the spin coating method of Au-STO were performed in the dark and between 60 and 400 K. Additionally, capacitance-voltage (C-V) measurements of the device were made under the same conditions and between 80 and 360 K. Basic diode parameters such as ideality factor (n), barrier height (Фb), series resistance (Rs) were determined from the I-V characteristic of the device using Thermionic emission (TE), Cheung and Norde functions. According to the TE method, the ideality factor of the device was calculated as 1.12 and the barrier height was 0.65 eV at 300 K. The obtained results showed that the Ni/Au-STO/n-Si heterojunction has rectifying properties. In all three calculation methods, as the application temperature increased, the ideality factor of the device decreased and on the other hand, the barrier height increased. This change showed the temperature sensitivity of the Au-STO/n-Si junction.

The illumination effects on the current conduction mechanisms of the Au/(Er2O3:PVC)/n‐Si (MPS) Schottky diodes

AbstractPhotoresponse of the Au/(Er2O3:PVC)/n‐Si diode was executed in a wide range of illumination intensity (P). Its basic electrical parameters such as ideality factor (n), barrier height (ΦB0), series and shunt resistances (Rs, Rsh), photocurrent (Iph), energy‐dependence of interface states (Nss), and photosensitivity (S) were calculated from the results of the current–voltage (I–V) measurements. At the negative‐bias region, an increase in Iph is observed due to the e−‐h+ pairs that occur as a result of increasing P and their drift in opposite directions under the internal electric field. The ln(Iph)–ln(P) plot shows a good linear behavior under various applied voltages. Their slopes vary from 1.47 to 1.64, indicating that empty trap levels, that is, levels not occupied by charges, are of low density. The values n, ΦB0, and Rs were obtained using the thermionic emission theory, Cheung, and Norde functions. The value of ΦB0 decreases with increasing n and P as linearly with ΦB0(n) = (−0.143n + 1.118) eV and ΦB0(P) = (−2 × 10−4P + 0.831) eV, respectively. This illumination coefficient of ΦB0 (=−2 × 10−4 eV/[mW/cm2]) is close to the temperature coefficient bandgap of Si (=−4.73 × 10−4 eV/K). These results show that the performed Au/(Er2O3:PVC)/n‐Si diode has excellent photo‐response and can be successfully used in photovoltaic applications instead of conventional metal–semiconductor diodes.

Fabrication and characterization of novel Ga-doped WO3 films and n-Ga@WO3/p-Si junction diode for optoelectronic device applications

In this work, we have fabricated the gallium doped tungsten trioxide (Ga@WO3) films and n-Ga@WO3/p-Si diodes by taking various concentrations (0, 3, 6, 9, and 12 wt%) of Ga through the spin-coating method. To analyze the impact of Ga-dopant on the physical properties of WO3 films, XRD, SEM, and robust dc electrical analyses have been used. From the XRD analysis, compared to the lower concentration of Ga dopant, the higher dopant concentrations show the presence of Ga on the o-GaWO3 crystal structure. The nanoplates-like surface morphology was detected by SEM analysis. The temperature-dependent dc conductivity was studied by I-V characterization, and 12 wt% of Ga doped WO3 thin film exhibits a higher conductivity value and low activation energy (Ea) at room temperature. The J-V nature signifies that n-WO3/p-Si diode performance was enhanced using Ga dopant concentration. The diode constraints ideality factor (n) and barrier height (ΦB) values were determined from J-V, Cheung’s, and Norde's functions. From J-V-T & Richardson plot (ln (J0/T2)), we obtain that the ΦB values were decreased with decreasing temperature. This is explained through the mechanism of thermionic emission with ΦB Gaussian distribution. The determined parameters of the fabricated films and junction diode signify that these can be employed in the applications of photodetectors and solar cells.