Structural, chemical states, electrical properties and forward transport phenomena of Ti/MnO2/p-InP heterostructure with a transition metal oxide MnO2 interlayer

Abstract

The study examines the surface topology, optical, structural and electrical characteristics of e-beam evaporated manganese dioxide (MnO2) films on p-InP using AFM, FESEM, UV–Vis, XRD, XPS and I–V procedures. The surface roughness of the MnO2 was smooth from AFM and FESEM analysis. The optical bandgap of MnO2 film was extracted from Tauc's plot. The outcomes endorse that the MnO2 layer deposited on InP. Then, the Ti/MnO2/p-InP heterostructure (HS) was created with an MnO2 interlayer to check the consequence of MnO2 on the electrical features of the Ti/p-InP Schottky diode (SD). The I–V results demonstrated that the higher Φb is acquired for the HS (0.90 eV) than the SD (0.84 eV), implying the MnO2 layer alters the Фb. Also, the Фb, ‘n’ and RS of the SD and HS can be determined by utilizing Cheung's and Norde's functions. The estimated Фb was almost similar, indicating the methodologies applied here are sturdy and effective. The determined NSS of the HS is lesser than the SD, implying that the MnO2 interlayer has a significant role in the decrease in NSS. The forward bias log (I)-log(V) plot of the SD and HS indicates that the ohmic behavior and space charge limited the conduction process at lower-bias and higher-bias segments, respectively. The study outcomes suggested that the transition metal oxide MnO2 layer would be favourable for creating MIS devices.