Structural and electronic characterization of silicon based MIS contact by xanthene dye molecules (Erythrosine B)

Abstract

The effect of erythrosine B (ERY) organic material as an interface layer on the electronic characteristics of the Al/p-Si junction is examined in the present work. AFM, NMR, UV–Vis and FTIR measurements have been conducted on the ERY dye molecule. The ERY film on the surface of the substrate is coated with nanoparticles, according to the surface analysis performed using the AFM technique. The basic diode parameters of Al/p-Si and Al/ERY/p-Si junctions were measured by utilizing current-voltage (I–V) and capacitance-voltage (C-V) techniques. The junctions with and without organic interfacial layers were found to have ideality factors of 1.931 and 1.925, respectively. For MS and MIS contacts, the estimated values of barrier height were 0.592 eV and 0.937 eV, respectively. Additionally, the series resistances for the MS and MIS structures by utilizing Norde function, were determined to be 0.14 kΩ and 322.85 kΩ, respectively. In addition, the reverse bias 1/C2-V characteristics were used to analyze the barrier height values and compare the findings to those from I-V method. The experimental findings demonstrated that the Al/ERY/p-Si MIS diode has a barrier height that is remarkably greater than that of the reference Al/p-Si junction. Placement of the ERY dye interlayer between a metal and a semiconductor could enhance and regulate the performance and characteristic of these types of junctions.