Nonvolatile Random Access Memory Research Articles

Demonstration of bipolar resistive memory fabricated using an ultra-thin BaTiOx resistive switching layer with a thickness of ∼5 nm

In this study, a high-performance non-volatile bipolar resistive random-access memory (RRAM), which was fabricated using an ultra-thin barium titanate (BaTiOx, BTO) film as a resistive switching (RS) layer, was demonstrated. The BTO RS layers, whose thicknesses were only about 5 nm, were prepared using radio-frequency sputtering under different oxygen flow rates. Introduction of oxygen was used to modify the chemical compositions of the BTO films. Copper was used as the top electrode material to realize a Cu/BTO/n+-Si electrochemical metallization memory, where the resistance switching was triggered by electrochemical reaction of Cu electrode. The RRAM could repeatedly and consistently switch between a high-resistance state and a low-resistance state over 300 cycles. A large memory window of 105 and a long data retention time of >1.5 × 104 s both at room temperature and 85 °C were observed. Moreover, the Cu/BTO/n+-Si RRAM showed high switching speeds of 60–70 ns.

Theoretical insights into the ultrahigh piezoelectric performance of (BiFeO3)n/(BaTiO3)n (n = 1–5) superlattices

Perovskite structures have attracted extensive attention in microelectromechanical systems and nanoelectromechanical systems devices due to the high piezoelectric response and the low dielectric constant. The piezoelectric and dielectric properties of the tetragonal BiFeO3/BaTiO3 superlattices grown along the c-axis direction are investigated using density functional theory (DFT) and density functional perturbation theory. The calculated results demonstrate that the (BiFeO3)n/(BaTiO3)n (n = 1–5) superlattices exhibit a profoundly increased piezoelectric response compared to their bulk structures. The (BiFeO3)2/(BaTiO3)2 possesses the highest piezoelectric d33 of 697 pC/N among known lead-free perovskite systems. Furthermore, the (BiFeO3)2/(BaTiO3)2 superlattice possesses a low dielectric ɛ33, and its d33 at 2% tensile strain is 16 times larger than that of an unstrained equilibrium structure. This demonstrates that biaxial tensile strain significantly enhances the piezoelectric response. Combining the special quasirandom structure method with DFT, the structures of a 0.5BiFeO3–0.5BaTiO3 solid solution are predicted, and its calculated d33 is 58 pC/N, which is much smaller than that of a (BiFeO3)2/(BaTiO3)2 superlattice. The results suggest that the (BiFeO3)2/(BaTiO3)2 superlattice might be a potential candidate for nonvolatile random access memory, transducers and actuators, and nanoscale electronic devices.

Enhancing reliability in oxide-based memristors using two-dimensional transition metal dichalcogenides

Oxide-based memristor is an attractive candidate for future nonvolatile resistive random access memory (RRAM) devices. However, it suffers from insufficient reliability, owing to the randomness of the conductive filaments, hindering the practical use of the memristor for future RRAM applications. Here, we propose harnessing the two-dimensional (2D) transition metal dichalcogenides (TMDs) on oxide memristor to achieve high device reliability by controlling oxygen vacancy-based filaments near the TMDs/oxide interface. By forming the Pt/WSe2/HfxZr1-xO2 (HZO)/TiN structure, the fabricated memristor exhibits high reliability with good cyclic endurance (over 2,000 cycles), retention (104 s), and low cycle-to-cycle variability. Surface chemical analysis reveals the abundant oxygen vacancies induced by forming WSe2/HZO interface are the source of filamentary switching. By incorporating 2D materials and oxides, the practical application of memristor to future information processing devices can be boosted by the enhanced device reliability.

A theoretical approach to study oxide-based perovskite materials XTiO3 (X = Be, Mg, Ca, Sr and Ba) for photovoltaic applications

Oxide-based perovskite materials have a large application in fuel and hydrogen sensors, non-volatile random access memory devices, semiconductor fabrications, optoelectronic, thermoelectric and photovoltaic devices. In this report, equilibrium geometries, and optoelectronic properties of oxide-perovskite materials XTiO3 (X = Be, Mg, Ca, Sr and Ba) are investigated through Conceptual Density Functional Theory (CDFT) technique. The HOMO–LUMO energy gap obtained from functional B3LYP/LANL2DZ and B3PW91/LANL2DZ are observed in the range of 1.201 eV–4.647 eV and 1.519 eV–4.903 eV respectively, which justifies their applications in solar cells and optoelectronic devices. HOMO–LUMO energy gap shows a downward trend when materials travel from Be to Mg to Ca to Sr to Ba, except for BaTiO3 in B3PW91/LANL2DZ. BeTiO3 displays the maximum value of HOMO–LUMO gap, hardness and electronegativity value. Hardness and softness of these substances are found between 0.600–2.452 eV and 0.204–0.788 eV respectively whereas refractive index and dielectric constant of XTiO3 are observed in the range of 2.017–3.684 and 4.067–13.574 respectively. Across all relationships, XTiO3’s dielectric constant and refractive index show a rising pattern from Be to Mg to Ca to Sr to Ba, except for BaTiO3 computed using B3PW91/LANL2DZ. The lowest refractive index and dielectric constant are displayed by the BeTiO3. TD-DFT calculation is performed to understand the absorption spectra of these materials. Optical transition energy and wavelength of XTiO3 are found between 0.339–3.535 eV and 350.68–3656.15 nm respectively. An interesting relationship is established between HOMO–LUMO energy gap, optical transition energy and wavelength of XTiO3 materials. The investigated compounds exhibit a linear pattern between HOMO–LUMO energy gap and optical transition energy whereas wavelength shows an inverse trend. MEP of these compounds are also discussed.

Electron-phonon interaction, magnetic phase transition, charge density waves, and resistive switching in VS2 and VSe2 revealed by Yanson point-contact spectroscopy

VS2 and VSe2 have attracted particular attention among the transition metals dichalcogenides because of their promising physical properties concerning magnetic ordering, charge density wave (CDW), emergent superconductivity, etc., which are very sensitive to stoichiometry and dimensionality reduction. Yanson point-contact (PC) spectroscopic study reveals metallic and nonmetallic states in VS2 PCs, as well as a magnetic phase transition, was detected near 20 K. The rare PC spectra, where the magnetic phase transition was not visible, show a broad maximum of around 20 mV, likely connected with electron-phonon interaction (EPI). The PC spectra of VSe2 demonstrate metallic behavior, which allowed us to detect features associated with EPI and CDW transition. The Kondo effect appeared for both compounds, apparently due to interlayer vanadium ions. Besides, the resistive switching was observed in PCs on VSe2 between a low resistive, mainly metallic-type state, and a high resistive nonmetallic-type state by applying bias voltage (about 0.4 V). Reverse switching occurs by applying a voltage of opposite polarity (about 0.4 V). The reason may be the alteration of stoichiometry in the PC core due to the displacement of V ions to interlayer under a high electric field. The observed resistive switching characterizes VSe2 as a potential material, e.g., for non-volatile resistive RAM, neuromorphic engineering, and other nanoelectronic applications. Per contra, VS2 attracts attention as a rare layered van der Waals compound with magnetic transition.

A novel MTCMOS based 8T2M NVSRAM design for low power applications with high temperature endurance

This research investigates, for the first time, a novel eight-transistor-two-memristor (8T2M) nonvolatile static random access memory (NVSRAM) with 7-nm technology. The key innovation in this design lies in the incorporation of multiple-threshold complementary metal oxide semiconductor (MTCMOS) technology with power gating technique, which enables efficient power management and enhanced performance with low leakage current. The implementation of multiple threshold voltage levels allows for dynamic control of transistor behavior, optimizing power consumption and read/write speeds. As compared to a traditional six-transistor (6T) static random access memory (SRAM) cell, it has been ascertained that there is a 33% enhancement in the read margin and an 18% improvement in the write margin. Moreover, the delay for read, write ‘0’ and write ‘1’ is also minimized by 63.89%, 37.99% and 42.77%. Furthermore, the power attenuation is also reduced for read and write by 63.02% and 81.6%, respectively with respect to a conventional SRAM.

Micromagnetic modeling of double spin-torque magnetic tunnel junction devices

Emerging nonvolatile magnetoresistive random access memory exhibits high endurance and long data retention compared to flash memory. Additionally, devices with double spin torque magnetic tunnel junctions (dsMTJ) featuring two magnetic reference layers demonstrate enhanced torques, fast switching, and reduced switching currents. To accurately model these devices, we adopt a coupled spin and charge transport approach allowing to describe spin-transfer torques in metallic spin valves and magnetic tunnel junctions on equal footing. Our findings indicate the critical influence of metallic non-magnetic spacers (NMS) properties separating the free layer from the second reference layer on the switching speed improvement in dsMTJ devices.

Investigation on self-rectifying properties of Pt/HfO2/Ti with rivet-like structure based on ALD conformal technology

This work explores an architecture for nonvolatile resistive random-access memory (RRAM) systems. The study proposes a self-rectifying RRAM device utilizing a two-terminal 1R selector that harmonizes the gate control efficacy of transistors with the inherent simplicity of diode structures. A rivet-like HfO2-based RRAM array is meticulously constructed through atomic layer deposition (ALD), aiming to enhance device performance and retention stability. The conformal fabrication technique of ALD method is critical in achieving uniform coverage of isolation layers and precise electrode placement, which is instrumental in the fabrication of high-performance memory cells. Empirical analyses indicate significant improvements in rectification and ON/OFF ratios compared to existing RRAM models, bolstered by compatibility with established CMOS processes. It reveals that these advances are conducive to scalable, high-density memory integration, positioning the RRAM as a viable contender for future computational applications that require high efficiency and neuromorphic computing capabilities.

Random telegraph noise characteristic of nonvolatile resistive random access memories based on optical interference principle

The influence of random telegraph noise (RTN) could reduce the reading margin, which would cause computational errors in data recognition. This paper proposes a current sensor based on the principle of optical fiber interference, which can avoid the interference generated during the RTN testing process and improve the accuracy due to its passive characteristics. In this study, a hafnium oxide based memristor was fabricated, the switching voltages of Cu and TiN as the top electrodes are 0.2 V and 0.15 V, respectively. In addition, the RTN spectral density of the two device structures in LRS increases from 10−5 to 10−1 A2 Hz−1 and from 10−5 to 101 A2 Hz−1 with increasing applied voltage. While the RTN in high resistance state is independent of the applied voltage. Furthermore, based on the analysis of the experimental data, the generation mechanism of the RTN is attributed to local defects and the capture or emission of carriers by traps.

Memory device based on a nano-granulars and nano-worms structured MoS2 active layer: The origin of resistive switching characteristics

This study systematically demonstrates resistive switching (RS) functionality of MoS2 nanostructured [nano-granulars (NGs) and nano-worms (NWs)] based non-volatile resistive random access memory (ReRAM) device. Interestingly, the SET and RESET voltage sharply changes from NGs to NWs device. The RS behavior of devices is interpreted by proposing and discussing a model. In the Ag/MoS2(NGs)/ITO device, a high resistance state (HRS) and low resistance state (LRS) could be ascribed due to the formation/disruption of conducting filament via trapping-detrapping of electrons across the NGs active layer. In contrast, the RS behavior of Ag/MoS2(NWs)/ITO device is caused by forming of an Ag metallic filamentary route between the electrodes. The NWs structured device show substantially better endurance and homogeneity than the device with an NGs structure. This nanostructural-dependent device functionality allows extended RS properties and establishes a relationship between the material's nano-level structural and electrical features.

Roadmap for ferroelectric domain wall memory

Commercial nonvolatile Ferroelectric Random Access Memory employs a destructive readout scheme based on charge sensing, which limits its cell scalability in sizes above 100 nm. Ferroelectric domain walls are two-dimensional topological interfaces with thicknesses approaching the unit cell level between two antiparallel domains and exhibit electrical conductivity, distinguishing them from insulating matrices that are uniformly ordered. Recently, novel research has been devoted to utilizing this extraordinary interface for the application in nonvolatile memory with nanometer-sized scalability and low energy consumption. Here, we pay more attention to the development of the domain wall memory technologies in the future with challenges and opportunities to design planar and vertical arrays of the memory cells in the CMOS platform.

Thermodynamic properties and switching dynamics of perpendicular shape anisotropy MRAM

The power consumption of modern random access memory (RAM) has been a motivation for the development of low-power non-volatile magnetic RAM (MRAM). Based on a CoFeB/MgO magnetic tunnel junction, MRAM must satisfy high thermal stability and a low writing current while being scaled down to a sub-20 nm size to compete with the densities of current RAM technology. A recent development has been to exploit perpendicular shape anisotropy along the easy axis by creating tower structures, with the free layers’ thickness (along the easy axis) being larger than its width. Here we use an atomistic model to explore the temperature dependent properties of thin cylindrical MRAM towers of 5 nm diameter while scaling down the free layer from 48 to 8 nm thick. We find thermal fluctuations are a significant driving force for the switching mechanism at operational temperatures by analysing the switching field distribution from hysteresis data. We find that a reduction of the free layer thickness below 18 nm rapidly loses shape anisotropy, and consequently stability, even at 0 K. Additionally, there is a change in the switching mechanism as the free layer is reduced to 8 nm. Coherent rotation is observed for the 8 nm free layer, while all taller towers demonstrate incoherent rotation via a propagated domain wall.

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

AbstractUltralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements. A nanoscale polycrystalline Hf0.75Zr0.25O2 (HZO) thin films on Pt/Si substrate are fabricated and investigated for suitability for bipolar resistive switching. The device illustrates monoclinic and tetragonal/orthorhombic phases with weak ferroelectricity and robust resistive switching. Small remanent polarization (≈0.1 μC cm−2) may assist in the height reduction of barrier height and ease the electron for transport. Remarkably, the Al/HZO/Pt/Si device, consisting of thin films with 10 and 5 nm thicknesses, exhibits a switching voltage below −30 mV from a low‐resistance state (LRS) to a high‐resistance state (HRS). It shows a significant ROFF/RON ratio of 106, making it suitable for low power consumption and minimal heat dissipation devices. Moreover, the utilization of an ultrathin film (5 nm) results in an improved reduction (< 0.7 V) of the operating window at the positive voltage. Direct tunneling and the Fowler–Nordheim tunneling model are performed in current–voltage (I–V) data to study the charge transportation behavior over a trapezoidal and triangular potential barrier. These results of the HZO candidate may stimulate the futuristic nonvolatile resistive random‐access memory (ReRAM) in the optoelectronic industry.

A Multi-bit ECRAM-Based Analog Neuromorphic System with High-Precision Current Readout Achieving 97.3% Inference Accuracy.

This article proposes an analog neuromorphic system that enhances symmetry, linearity, and endurance by using a high-precision current readout circuit for multi-bit nonvolatile electro-chemical random-access memory (ECRAM). For on-chip training and inference, the system uses activation modules and matrix processing units to manage analog update/read paths and perform precise output sensing with feedback-based current scaling on the ECRAM array. The 250nm CMOS neuromorphic chip was tested with a 32 x 32 ECRAM synaptic array, achieving linear and symmetric updates and accurate read operations. The proposed circuit system updates the 32 x 32 ECRAM across 100 levels, maintaining consistent synaptic weights, and operates with an output error rate of up to 2.59% per column. It consumes 5.9 mW of power excluding the ECRAM array and achieves 97.3% inference accuracy on the MNIST dataset, close to the software-confirmed 97.78%, with only the final layer (64 x 10) mapped to the ECRAM.

Near room temperature multilevel resistive switching memory with thin film ionic liquid crystals

Multilevel operation of nonvolatile resistive random-access memory devices was demonstrated using thin films of an ionic liquid crystal, 1-dodecyl-3-methylimidazolium tetrafluoroborate ([C12mim][BF4]), as a resistive switching layer.

External fields effectively switch the spin channels of transition metal-doped β-phase tellurene from first principles.

Non-volatile magnetic random-access memories have proposed the need for spin channel switching. However, this presents a challenge as each spin channel reacts differently to the external field. Tellurene is a semiconductor with a tunable bandgap, excellent stability, and high carrier concentration, but its lack of magnetic properties has hindered its application in spintronics. In this work, the influence of an external field on transition metal (TM)-doped β-tellurene is systematically analysed from first principles. First, the active-learning moment-tensor-potential (MTP) is used to verify the thermal stability of the V-doped system with the MTP proving to be 900 times faster than the traditional method. Subsequently, under biaxial strain ranging from -2% to 10%, the V-doped system undergoes a gradual transition from a magnetic semiconductor to a spin-gapless semiconductor, and further to a half-metal and magnetic metal. The band structure can be maintained under an electric field. By examining the magnetic anisotropy energy, the lattice changes profoundly impact the electromagnetic properties, particularly with the TMs being sensitive to strain. Moreover, the band structure is reflected in the spin resolution current of the magnetic tunnel junction. This work investigates the response of doped β-Te to external fields, revealing its potential applications in spintronics.

Strain engineering of Bi2OS2 ultrathin films: electronic and ferroelectric properties

The non-monotonous relationship of ferroelectric polarization with strain can be attributed to distinct atomic coordination environments in Bi2OS2, which is different from a nearly monotonous trend of ferroelectricity-stabilized energy.

First-principles prediction of two-dimensional Rare-earth intrinsic ferrovalley materials: Non-Janus GdXY (X≠Y=Cl,Br,I) monolayers

Two-dimensional ferrovalley magnetic materials have attracted much attention due to the applications in valley-based nonvolatile random access memories and valley filters. In this work, using first-principles calculations, we predict a promising class of bipolar magnetic semiconductors, namely non-Janus GdXY(X≠Y=Cl,Br,I) monolayers, which exhibit excellent mechanical and thermal stability, large magnetic moment (8 μB/Gd), and high Curie temperature (above 450 K). When magnetized along the ±z direction, a spontaneous valley polarization can be observed in non-Janus GdXY. Due to the non-zero Berry curvature, the anomalous Hall effect will be able to be observed in non-Janus GdXY. In addition, the system transforms into a semi-semiconductor from a bipolar magnetic semiconductor with increasing biaxial tensile strain. Under the strain of -4%∼+4%, the ferrovalley characteristics can be well maintained. Our findings not only reveal that non-Janus GdXY is a novel room-temperature ferrovalley semiconductor material, but also provide a new platform for designing spintronics and valley electronics devices.

Electron-Sponge Nature of Polyoxometalates for Next-Generation Electrocatalytic Water Splitting and Nonvolatile Neuromorphic Devices.

Designing next-generation molecular devices typically necessitates plentiful oxygen-bearing sites to facilitate multiple-electron transfers. However, the theoretical limits of existing materials for energy conversion and information storage devices make it inevitable to hunt for new competitors. Polyoxometalates (POMs), a unique class of metal-oxide clusters, have been investigated exponentially due to their structural diversity and tunable redox properties. POMs behave as electron-sponges owing to their intrinsic ability of reversible uptake-release of multiple electrons. In this review, numerous POM-frameworks together with desired features of a contender material and inherited properties of POMs are systematically discussed to demonstrate how and why the electron-sponge-like nature of POMs is beneficial to design next-generation water oxidation/reduction electrocatalysts, and neuromorphic nonvolatile resistance-switching random-access memory devices. The aim is to converge the attention of scientists who are working separately on electrocatalysts and memory devices, on a point that, although the application types are different, they all hunt for a material that could exhibit electron-sponge-like feature to realize boosted performances and thus, encouraging the scientists of two completely different fields to explore POMs as imperious contenders to design next-generation nanodevices. Finally, challenges and promising prospects in this research field are also highlighted.

Growth and characterization of sputter-deposited Ga2O3-based memristive devices

In the last few years, there has been significant interest in gallium oxide devices for resistive switching technologies due to its remarkable sensitivity to oxygen. In this study, we present the growth and resistive switching of a (2¯01) oriented (75 ± 3) nmβ-Ga2O3 thin film on a Ru/Al2O3 substrate using magnetron radio frequency sputtering. The observed resistive switching was attributed to the formation and rupture of conductive filaments constituted by oxygen vacancies in the β-Ga2O3 film as confirmed by x-ray photoelectron spectroscopy and energy-dispersive x-ray spectroscopy. The electrical conduction was found to be of Ohmic nature in the low-resistance ON state, while the high-resistance OFF state was governed by the Poole–Frenkel transport mechanism. Exhibiting stable endurance cycles, long retention times, and ON/OFF ratios of up to 104, the devices can be considered as promising prototypes for future nonvolatile resistive switching random access memory with respect to both switching performance and device stability.