Memory device based on a nano-granulars and nano-worms structured MoS2 active layer: The origin of resistive switching characteristics

Abstract

This study systematically demonstrates resistive switching (RS) functionality of MoS2 nanostructured [nano-granulars (NGs) and nano-worms (NWs)] based non-volatile resistive random access memory (ReRAM) device. Interestingly, the SET and RESET voltage sharply changes from NGs to NWs device. The RS behavior of devices is interpreted by proposing and discussing a model. In the Ag/MoS2(NGs)/ITO device, a high resistance state (HRS) and low resistance state (LRS) could be ascribed due to the formation/disruption of conducting filament via trapping-detrapping of electrons across the NGs active layer. In contrast, the RS behavior of Ag/MoS2(NWs)/ITO device is caused by forming of an Ag metallic filamentary route between the electrodes. The NWs structured device show substantially better endurance and homogeneity than the device with an NGs structure. This nanostructural-dependent device functionality allows extended RS properties and establishes a relationship between the material's nano-level structural and electrical features.