AbstractA 23–31 GHz three‐stage low‐noise amplifier (LNA) based on 100 nm gallium nitride‐on‐Si technology is presented with a total circuit size of 2.0 × 1.4 mm2. To achieve an excellent noise figure (NF) and gain, a special inductive dual‐source feedback network is used; it contributes to noise matching and input conjugate matching by resonating with the parasitic gate‐source capacitance of the transistor. T‐type networks with low‐quality factor are carefully employed for broadband matching circuits to extend the bandwidth. Meanwhile, a lossy RLC feedback network of the output stage can further obtain a wider frequency band and improve the stability through Miller approximation analysis of the input quality factor and gain of the closed‐loop system. The proposed LNA achieves a NF of 1.9–2.5 dB, a small signal gain of 24–27 dB, and an output 1 dB compression point (P1dB) of 16 dBm across the band.