This article is dedicated to the study of the structural, electrical, and optoelectronic properties of nanostructured carbon films obtained by methane plasma deposition, followed by annealing at high temperatures (650–800 °C). The conditions for obtaining the films affected the final physicochemical parameters. We studied the film morphology using atomic force microscopy, scanning electron microscopy, Raman spectroscopy, X-ray energy-dispersive analysis, and analysis of the current voltage (C-V) characteristics. The film thickness ranged from 20 to 150 nm, with a C/O ratio of 4:1. Structural studies have shown that the resulting nanostructured carbon films consist mainly of nanographite flakes, the lateral dimensions of which lie in the lateral size (La) range of 5 to 12 nm, and contain different fractional concentrations of sp3/sp2 crystalline phases of carbon. We have established that with an increase in the annealing temperature, the defectiveness of the carbon film structure increases; however, at the same time, the degree of graphitization increases, as indicated by the Raman spectroscopy data and the calculated values of layer resistances from the C-V characteristics. The values of photocurrents were calculated, from which it was found that the samples exhibited photosensitivity in the temperature range of room temperature to –173 °C, based on the temperature dependences of the C-V. The obtained results can be useful in creating day and night light sensors as well as temperature sensors suitable for use at low temperatures.