P-type Silicon Research Articles

Analysis of nickel oxide as a counter electrode for dye-sensitized solar cells using OghmaNano software

Dye-sensitized solar cells (DSSCs), a promising green technology, convert solar energy into electricity more cost-effectively than traditional solar cells. While platinum (Pt) is commonly used in DSSCs, its high cost and toxicity limit practical applications. Recent research aims to develop low-cost counter electrodes with high efficiency. Nickel oxide (NiO), a p-type semiconductor with a wide bandgap, good transmittance, and suitable work function, emerges as a potential alternative for counter electrode of DSSCs. In this work, DSSCs with NiO of thicknesses varying from 100 nm to 1000 nm were simulated to determine its influence on photovoltaic performance using OghmaNano software. The structure of simulated solar cells consists of NiO as counter electrode, zinc oxide (ZnO) as photoanode, N719 as dyes, electrolyte as charge carrier transport, and fluorine-doped tin oxide (FTO) as a contact layer. There are five data of NiO used as an active layer. From the simulation results, NiO-doped gold exhibits the highest power conversion efficiency (PCE) of 15.95% at a thickness of 700 nm, while pure NiO shows the lowest PCE with 4.53% at a thickness of 600 nm. These results have demonstrated that NiO can replace Pt as a counter electrode for DSSCs and doping plays a vital role in increasing efficiency.

Titanium-coated high-density Fe2O3 single crystal nanowire array for solar water splitting

Fe2O3 holds promising n-type semiconductor material in the field of solar water splitting due to its excellent photocatalytic properties. However, the photoelectrochemical performance of Fe2O3 is limited by its inherent properties such as poor conductivity, and charge separation efficiency owing to its recombination rate. Therefore, researchers are more focused on nanostructuring, doping, and surface coating to overcome these issues of Fe2O3. In this study, we have investigated a low-cost way to fabricate a Ti coating layer on a high-density Fe2O3 single-crystal nanowire array for solar water splitting. Firstly, we have prepared a high-density single-crystal Fe2O3 nanowire array at lower temperatures by a new approach stress-induced atomic diffusion method. Thereafter, the prepared nanowire array was coated by Ti film using RF sputtering. The optimal film thickness of 13 nm titanium coatings layer into Fe2O3 single crystal nanowire array exhibited a high photocurrent density of 1.36 mA/cm2 at 1.23 V versus RHE and solar to hydrogen conversion efficiency (STH) of 1.67%, which could be resulting from adjusted optoelectronic properties of the nanowires.

Indium-free nonmetal and Nb co-doped anatase TiO2 transparent conductive oxide materials for photovoltaic applications: From first-principles calculations to macroscopic simulation

Various researchers have attempted to design indium-free transparent conductive materials. This study first employed density functional theory combined with the Hubbard U parameter to predict the photoelectric properties of nonmetal (B, C, N, F, P, and S) and Nb co-doped anatase TiO2. The results indicate that Ti0.875Nb0.125O1.96875N0.03125, Ti0.9375Nb0.0625O1.96875F0.03125, Ti0.875Nb0.125O1.96875P0.03125 and Ti0.9375Nb0.0625O1.96875S0.03125 possess characteristics of n-type semiconductors with high transmittance, exceptional thermal stability and wide bandgap. Notably, Ti0.9375Nb0.0625O1.96875S0.03125 exhibits optimal electronic conductivity due to its lower effective mass and higher electron concentration. Then, we used the SCAPS-1D solar cell simulation software to simulate the macroscopic characteristics of the MASnI3-based perovskite solar cell with Ti0.9375Nb0.0625O1.96875S0.03125 transparent conductive oxide layer based on the microscopic properties computed at the density functional theory level. A maximum efficiency of 27.17 % is obtained by regulating the thickness, electron affinity, and defect density of Ti0.9375Nb0.0625O1.96875S0.03125 layer and the thickness of MASnI3 absorber layer. The findings highlight the tremendous potential of Ti0.9375Nb0.0625O1.96875S0.03125 as an indium-free transparent conductive oxide candidate material for photovoltaic applications.

Crystal structure, stability, and transport properties of Li2BeAl and Li2BeGa Heusler alloys: a DFT study

In this study, the structural, elastic, electronic, and thermoelectric properties of full Li2BeAl and Li2BeGa Heusler alloys were explored using density functional and the Boltzmann transport theories. The GGA and HSE approximations have been used for the exchange–correlation potential. Results indicated that these two compounds are more energetically stable in the inverse Heusler structure. Additionally, both Li2BeAl and Li2BeGa Heusler alloys were found to be mechanically stable due to the positive values of the elastic constants. Also, the high values of the Young's modulus indicate that these compounds are stiff and exhibit a semi-metallic nature. The band gaps were determined to be 0.13 eV and − 0.22 eV for Li2BeAl and Li2BeGa alloys, respectively, using the GGA approximation. By employing the HSE hybrid functional, however, the band gap for Li2BeAl increased to 0.26 eV, and for Li2BeGa, it decreased to − 0.16 eV. Regarding thermoelectric properties, Seebeck coefficient, electrical conductivity, electronic and lattice thermal conductivities, power factor, and the figure of merit have been calculated for both Li2BeAl and Li2BeGa Heusler alloys at different temperatures. Seebeck coefficient in both alloys decreases with increasing the temperature and has the highest value at 300 K. Thermal conductivity and electrical conductivity increase with increasing the temperature, which confirms the intermetallic behavior of the Heusler alloys. The results obtained for both alloys show that n-type doping has better thermoelectric properties than p-type doping. The maximum value of the figure of merit (ZT) was obtained for n-type doping, which was 1.43 at 660 K for Li2BeAl and 0.39 at 1000 K for Li2BeGa alloy. The high values of ZT especially for electron-dopped Li2BeAl suggest the great potential of this material for use in thermoelectric devices. This study suggests that the proposed materials have potential applications in spintronic devices and thermoelectric materials due to their intermetallic character and effective thermoelectric coefficients.

Effect of biaxial tensile-compressive deformation on the optoelectronic properties of monolayers of MoTe2 with adsorbed alkali metals X (X = Li, Na, K, Rb, Cs): a first principles

Based on a first-principles approach, the effects of tensile-compression deformation on the structural stability, electronic structure, and optical properties of monolayers of MoTe2 adsorbed with alkali metal atoms X (X = Li, Na, K, Rb or Cs) were calculated. It was found that the structural stability of the MoTe2 monolayer after adsorption of Li atoms was the most stable, with the smallest adsorption and formation energies and the smallest adsorption height. The movement of the Fermi energy toward the conduction band makes the system an n-type semiconductor. Subsequently, the adsorbed Li-MoTe2 monolayers were selected for tensile-compressive deformation, and with the increase of tensile deformation, the band gap decreased to zero at 10% deformation and exhibited metallic properties. As compressive deformation grows, the band gap shifts from direct to indirect, and metallic characteristics emerge when deformation approaches −10%. The Te-s and Te-p orbital electrons near the Fermi energy level and Mo-d orbitals make the main contribution to the adsorbed alkali metal molybdenum ditelluride system. In terms of optical characteristics, the MoTe2 system after alkali metal adsorption deformation is blue-shifted/ red-shifted at the absorption/reflection peak. These discoveries may help to broaden the possible applications of MoTe2 in low-dimensional electron-emitting devices.

Recent advances and prospects for GaN-based hybrid type ultraviolet photodetector

Abstract Solid-state UV photodetectors (PD) have received numerous attention because of the advantages of small size, absence of external cooling, high selectivity, and the ability to utilize the energy band structure semiconductor materials to achieve detection across various wavelengths. III-nitride thin films, as typical wide bandgap semiconductors with mature n-type and p-type doping capabilities, are ideal candidates for solid-state UV-PDs. However, a combination between III-nitride and other wide bandgap materials can either enrich the functionality of such devices such as spectrum-selective and broadband UV detection, or offers opportunities to enhance device performance, including high photoresponsivity, high external quantum efficiency, low dark current and fast response time. This topical review focuses on giving a thorough review of the III-nitride based hybrid-type UV photodetectors, their recent progress and future prospects. This review highlights different optical and electrical properties of various materials including GaN, Ga2O3, ZnO, perovskite etc. By carefully choosing the materials on two sides of the heterojunction and modulating the thickness and fermi levels and corresponding layers, p-i-n, Schottky, or MSM type photodetectors were successfully fabricated with outstanding device performances and novel spectral-selective properties. The advantages for future development of such hybrid-type PDs will be discussed, such as inherently formed p-n junction with large depletion region at the interface of two different materials, capability of bandgap engineering to tune the band offset of conduction band and valence band, thus enabling large barrier height for one type of carrier without influencing the other. The drawbacks in hybrid-type UV-PD due to poor interface quality and challenges in forming electrical contact in nanostructure hybrid UV-PD will also be discussed.

Designing PEDOT: PSS/Si hybrid solar cells via numerical simulation: optimum selection of the absorber and hole transport layer thickness and defect density

Numerical investigation of PEDOT: PSS/Si heterostructures was carried out using solar cell capacitance simulation (SCAPS 1D) in which experimentally observed absorbance of PEDOT: PSS was incorporated. The defect density of PEDOT: PSS, the defect density of n-Si, and the donor doping density of n-type silicon wafer were investigated based on the optimized absorption coefficient of n-type silicon wafer. The optimized value of PEDOT: PSS thickness, doping density, and the defect density of both PEDOT: PSS and n-Si were determined. The contour colour mapping tool was used to predict the efficiency region of the heterojunction solar cell. 21.2% efficient PEDOT: PSS/n-Si hybrid solar cells resulted after optimizing the parameters.

A novel AlCo1.2Cr0.8FeNi2.1 eutectic high entropy alloy with excellent corrosion resistance

A novel AlCo1.2Cr0.8FeNi2.1 eutectic high entropy alloy (EHEA) was designed and prepared. The microstructure of the as-cast alloy was characterized that a fine lamellar structure composed of FCC (L12) phase and B2 phase. The mechanical of the EHEA was studies by the tensile tests, and the corrosion properties of the EHEA in 3.5 wt% NaCl solution at room temperature was investigated. The results shown that the alloy exhibits synergistic effect of strength- plasticity with a high tensile strength of 1048.42 MPa and an excellent elongation of 18.92%. Potentiodynamic polarization test and electrochemical impedance spectroscopy (EIS) indicated that the EHEA exhibits spontaneous passivation in 3.5 wt% NaCl solution, forming a protective passive film that exhibits p-type and n-type semiconductor properties, with the main components of Al2O3, CoO, Cr2O3, Fe(OH)3, and NiO. Furthermore, the corrosion mechanism of EHEA was discussed.

The Crystal Structure of Al4SiC4 Revisited.

Al4SiC4 is a ternary wide-band-gap semiconductor with a high strength-to-weight ratio and excellent oxidation resistance. It consists of slabs of Al4C3 separated by SiC layers with the space group of P63mc. The space group allows Si to occupy two different 2a Wykoff sites, with previous studies reporting that Si occupies only one of the two sites, giving it an ordered structure. Another hitherto unexplored possibility is that Si can be randomly distributed on both 2a sites. In this work, we revisit the published ordered crystal structure using experimental methods and density functional theory (DFT). Al4SiC4 was synthesized by high-temperature sintering at 1800 °C from a powder mixture of Al4C3 and SiC. Neutron diffraction confirmed that Al4SiC4 crystallized with the space group of P63mc, with diffraction patterns that could be fitted to both the ordered and the disordered structures. Scanning transmission electron microscopy, however, provided clear evidence supporting the latter, with DFT calculations further confirming that it is 0.16 eV lower in energy per Al4SiC4 formula unit than the former. TEM analysis revealed Al vacancies in some of the atomic layers that can introduce p-type doping and direct band gaps of 0.7 and 1.2 eV, agreeing with our optical measurements. Finally, we propose that although the calculated formation energy of the Al vacancies is high, the vacancies are stabilized by entropy effects at the high synthesis temperature. This indicates that the cooling procedure after high-temperature synthesis can be important in determining the vacancy content and the electronic properties of Al4SiC4.

Gas-phase photocatalytic coprocessing of CO2 - H2O(v) to energy products promoted by the n,n-junction In2O3@g-C3N4 under VIS-light.

Carbon dioxide capture and utilization is a strategic technology for moving away from fossil-C. The conversion of CO2 into fuels demands energy and hydrogen that cannot be sourced from fossil-C. Co-processing of CO2 and water under solar irradiation will have a key role in the long-term for carbon-recycling and energy products production. This article discusses the synthesis, characterization and application of the two-phase composite photocatalyst, In2O3@g-C3N4, formed by thermal condensation of melamine in the presence of indium(III)nitrate. The composite exhibits a n,n-heterojunction between two n-type semiconductors, g-C3N4 and In2O3, leading to a more efficient charge separation. The composite has a flat band potential enabling it to effectively catalyze the reduction of CO2 in the gas phase to produce CO, CH4 and CH3OH. While the composite's overall photocatalytic efficiency is comparable to that of neat g-C3N4, its ability to promote multielectron-transfer and Proton Coupled to Electron Transfer (PCET) suggests that there is a potential for further optimization of its properties. The use of labelled 13CO2 has allowed us to clearly exclude that the reduced species are derived from the photocatalyst decomposition or the degradation of contaminants.

An inorganic-blended p-type semiconductor with robust electrical and mechanical properties

Inorganic semiconductors typically have limited p-type behavior due to the scarcity of holes and the localized valence band maximum, hindering the progress of complementary devices and circuits. In this work, we propose an inorganic blending strategy to activate the hole-transporting character in an inorganic semiconductor compound, namely tellurium-selenium-oxygen (TeSeO). By rationally combining intrinsic p-type semimetal, semiconductor, and wide-bandgap semiconductor into a single compound, the TeSeO system displays tunable bandgaps ranging from 0.7 to 2.2 eV. Wafer-scale ultrathin TeSeO films, which can be deposited at room temperature, display high hole field-effect mobility of 48.5 cm2/(Vs) and robust hole transport properties, facilitated by Te-Te (Se) portions and O-Te-O portions, respectively. The nanosphere lithography process is employed to create nanopatterned honeycomb TeSeO broadband photodetectors, demonstrating a high responsibility of 603 A/W, an ultrafast response of 5 μs, and superior mechanical flexibility. The p-type TeSeO system is highly adaptable, scalable, and reliable, which can address emerging technological needs that current semiconductor solutions may not fulfill.

Thickness dependence of the room-temperature ethanol sensor properties of Cu2O polycrystalline films

This study investigates the fabrication process of copper thin films via thermal evaporation, with precise control over film thickness achieved through Z-position adjustment. Analysis of the as-fabricated copper films reveals a discernible relationship between grain size (〈D〉) and Z-position, characterized by a phenomenological equation 〈D〉XRDn(Z)=〈D〉0n1+32rZ2+158rZ4 , which is further supported by a growth exponent (n) of 0.41 obtained from the analysis. This value aligns well with findings in the literature concerning the growth of copper films, thus underlining the validity and reliability of our experimental outcomes. The resulting crystallites, ranging in size from 20 to 26 nm, exhibit a resistivity within the range of 3.3–4.6 μΩ · cm. Upon thermal annealing at 200 °C, cuprite Cu2O thin films are produced, demonstrating crystallite sizes ranging from ∼9 to ∼24 nm with increasing film thickness. The observed monotonic reduction in Cu2O crystallites relative to film thickness is attributed to a recrystallization process, indicating amorphization when oxygen atoms are introduced, followed by the nucleation and growth of newly formed copper oxide phase. Changes in the optical bandgap of the Cu2O films, ranging from 2.31 to 2.07 eV, are attributed mainly to the quantum confinement effect, particularly important in Cu2O with size close than the Bohr exciton diameter (5 nm) of the Cu2O. Additionally, correlations between refractive index and extinction coefficient with film thickness are observed, notably a linear relationship between refractive index and charge carrier density. Electrical measurements confirm the presence of a p-type semiconductor with carrier concentrations of ∼1014 cm−3, showing a slight decrease with film thickness. This phenomenon is likely attributed to escalating film roughness, which introduces supplementary scattering mechanisms for charge carriers, leading to a resistivity increase, especially as the roughness approaches or surpasses the mean free path of charge carriers (8.61 nm). Moreover, ab-initio calculations on the Cu2O crystalline phase to investigate the impact of hydrostatic strain on its electronic and optical properties was conducted. We believe that our findings provide crucial insights that support the elucidation of the experimental results. Notably, thinner cuprite films exhibit heightened sensitivity to ethanol gas at room temperature, indicating potential for highly responsive gas sensors, particularly for ethanol breath testing, with significant implications for portable device applications.

Light-Induced Dynamic Activation of Copper/Silicon Interface for Highly Selective Carbon Dioxide Reduction.

Numerous studies have shown a fact that phase transformation and/or reconstruction are likely to occur and play crucial roles in electrochemical scenarios. Nevertheless, a decisive factor (such as facet, phase etc.) behind the diverse photoelectrochemical activity and selectivity of various copper/silicon photoelectrodes is still largely debated and missing in the community, especially for possibly dynamic behaviors of metal catalyst/semiconductor interface. Herein, through in situ X-ray absorption spectroscopy and transmission electron microscope, a model system of Cu nanocrystals with well-defined facets on black p-type silicon (BSi) is demonstrated to unprecedentedly reveal the dynamic phase transformation of forming irreversible silicide at Cu nanocrystal-BSi interface, which is validated to originate from the atomic interdiffusion between Cu and Si driven by light-induced dynamic activation process. The presence of in situ formed silicide can significantly enhance photovoltage and deliver a record-high onset potential above -0.4 V versus reversible reference electrode (RHE) for photoelectrochemical CH4 production. Significantly, the adaptive junction at Cu/Si interface is activated by an expansion of interatomic Cu-Cu distance, which efficiently restricts the C-C coupling pathway but strengthens the bonding with key intermediate of *CHO for CH4 yield, resulting in a remarkable 16-fold improvement in the product ratio of CH4/C2 products.

Spectrum-Dependent Image Convolutional Processing via a Two-Dimensional Polarization-Sensitive Photodetector.

Currently, the improvement in the processing capacity of traditional processors considerably lags behind the demands of real-time image processing caused by the advancement of photodetectors and the widespread deployment of high-definition image sensors. Therefore, achieving real-time image processing at the sensor level has become a prominent research domain in the field of photodetector technology. This goal underscores the need for photodetectors with enhanced multifunctional integration capabilities than can perform real-time computations using optical or electrical signals. In this study, we employ an innovative p-type semiconductor GaTe0.5Se0.5 to construct a polarization-sensitive wide-spectral photodetector. Leveraging the wide-spectral photoresponse, we realize three-band imaging within a wavelength range of 390-810 nm. Furthermore, real-time image convolutional processing is enabled by configuring appropriate convolution kernels based on the polarization-sensitive photocurrents. The innovative design of the polarization-sensitive wide-spectral GaTe0.5Se0.5-based photodetector represents a notable contribution to the domain of real-time image perception and processing.

Metal-organic decomposed lanthanum cerium oxide thin films: A study of chemical and surface properties

Lanthanum cerium oxide thin films have been deposited on n-type (100) silicon wafers using the spin coating technique. The post-deposition annealing was performed over spin-coated films. The compositional studies were conducted by performing Fourier transform infrared spectroscopy, Energy dispersive X-ray spectroscopy, and X-ray diffraction. Ellipsometry was used to determine the thickness and atomic force microscopy was performed to understand the surface morphology of the deposited thin films. The effect of rapid thermal annealing at different temperatures over the structural and chemical properties of the LaCeO2 thin films was observed. The FTIR spectra show the formation of silicates at the interface of the oxide and semiconductor, while XRD results show that the films become crystalline with increased annealing temperature. The refractive index was observed to be reduced with an increase in the annealing temperature and a minor reduction in the physical thickness as per the sample standard deviation of 0.2981[Formula: see text]nm.

An InGaAs-based Fin-EHBTFET with heterogate and barrier layer for high performance

Abstract This paper proposes a fin electron-hole bilayer tunneling field-effect transistor with a heterogate and an InAlAs barrier layer (HBF-EHBTFET). The heterogate can suppress off-state leakage caused by point tunneling, while the InAlAs barrier layer prevents source-drain direct tunneling, significantly reducing off-state current (Ioff). P-type Gaussian doping can not only solve the problem of inability to generate a hole layer during device fabrication, but also reduce the turn-on voltage of line-tunneling, ultimately increasing on-state current and reducing average subthreshold swing (SSavg). By optimizing parameters of the heterogate and InAlAs barrier layer, HBF-EHBTFET can obtain Ioff of 2.37×10-16 A/μm, SSavg of 17.97 mV/dec, cutoff frequency (fT) of 13.2 GHz, and gain bandwidth product (GBW) of 1.58 GHz. Compared with traditional EHBTFET, HBF-EHBTFET exhibits a reduction in Ioff by four orders of magnitude, a decrease in SSavg by 65.27%, and an increase in fT and GBW by 78.59 % and 93.62 %, respectively.

Amorphous TeO2 as p-type oxide semiconductor for device applications

Electronic devices would benefit from a low-cost amorphous, dopable, bipolar oxide semiconductor. However, p-type oxides are quite rare, largely due to self-compensation by native defects. Our simulations find that the amorphous phase of TeO2 is chemically ordered, forms shallow, uncompensated acceptor substitutional AsTe and NO centers, and uses materials that are processable at low temperatures.

Nanoscale Cu2ZnSnSxSe(4−x) (CZTS/Se) for Sustainable Solutions in Renewable Energy, Sensing, and Nanomedicine

The importance and breadth of applications of the family of quaternary chalcogenides with the formula Cu2ZnSnSxSe(4−x) (CZTS/Se) where x = 0–4 are steadily expanding due to the tunable optoelectronic properties of these compounds and the Earth abundance of the elements in their composition. These p-type semiconductors are viewed as a viable alternative to Si, gallium arsenide, CdTe, and CIGS solar cells due to their cost effectiveness, Earth’s crust abundance, and non-toxic elements. Additionally, CZTS/Se compounds have demonstrated notable capabilities beyond solar cells, such as photoelectrochemical CO2 reduction, solar water splitting, solar seawater desalination, hydrogen production, and use as an antibacterial agent. Various routes have been explored for synthesizing pure CZTS/Se nanomaterials and significant efforts have been dedicated to reducing the occurrence of secondary phases. This review focuses on synthetic approaches for CZTS/Se nanomaterials, with emphasis on controlling the size and morphology of the nanoparticles and their recent application in solar energy harvesting and beyond, highlighting challenges in achieving the desired purity required in all these applications.

Investigations of In2O3 Added SiC Semiconductive Thin Films and Manufacture of a Heterojunction Diode

This study involved direct doping of In2O3 into silicon carbide (SiC) powder, resulting in 8.0 at% In-doped SiC powder. Subsequently, heating at 500 °C was performed to form a target, followed by the utilization of electron beam (e-beam) technology to deposit the In-doped SiC thin films with the thickness of approximately 189.8 nm. The first breakthrough of this research was the successful deposition of using e-beam technology. The second breakthrough involved utilizing various tools to analyze the physical and electrical properties of In-doped SiC thin films. Hall effect measurement was used to measure the resistivity, mobility, and carrier concentration and confirm its n-type semiconductor nature. The uniform dispersion of In ions in SiC was as confirmed by electron microscopy energy-dispersive spectroscopy and secondary ion mass spectrometry analyses. The Tauc Plot method was employed to determine the Eg values of pure SiC and In-doped SiC thin films. Semiconductor parameter analyzer was used to measure the conductivity and the I-V characteristics of devices in In-doped SiC thin films. Furthermore, the third finding demonstrated that In2O3-doped SiC thin films exhibited remarkable current density. X-ray photoelectron spectroscopy and Gaussian-resolved spectra further confirmed a significant relationship between conductivity and oxygen vacancy concentration. Lastly, depositing these In-doped SiC thin films onto p-type silicon substrates etched with buffered oxide etchant resulted in the formation of heterojunction p-n junction. This junction exhibited the rectifying characteristics of a diode, with sample current values in the vicinity of 102 mA, breakdown voltage at approximately −5.23 V, and open-circuit voltage around 1.56 V. This underscores the potential of In-doped SiC thin films for various semiconductor devices.

Direct Selective Epitaxy of 2D Sb2Te3 onto Monolayer WS2 for Vertical p-n Heterojunction Photodetectors.

Two-dimensional transition metal dichalcogenides (2D-TMDs) possess appropriate bandgaps and interact via van der Waals (vdW) forces between layers, effectively overcoming lattice compatibility challenges inherent in traditional heterojunctions. This property facilitates the creation of heterojunctions with customizable bandgap alignments. However, the prevailing method for creating heterojunctions with 2D-TMDs relies on the low-efficiency technique of mechanical exfoliation. Sb2Te3, recognized as a notable p-type semiconductor, emerges as a versatile component for constructing diverse vertical p-n heterostructures with 2D-TMDs. This study presents the successful large-scale deposition of 2D Sb2Te3 onto inert mica substrates, providing valuable insights into the integration of Sb2Te3 with 2D-TMDs to form heterostructures. Building upon this initial advancement, a precise epitaxial growth method for Sb2Te3 on pre-existing WS2 surfaces on SiO2/Si substrates is achieved through a two-step chemical vapor deposition process, resulting in the formation of Sb2Te3/WS2 heterojunctions. Finally, the development of 2D Sb2Te3/WS2 optoelectronic devices is accomplished, showing rapid response times, with a rise/decay time of 305 μs/503 μs, respectively.