Abstract
P-type oxide semiconductors have attracted significant attention as conducting channel layers due to their wide applications in electronic devices. In this study, multi-component oxide-semiconductor Cu1–2xMnxSnxO thin films with x = 0.05, 0.10, 0.15, 0.20, 0.25, 0.30, and 0.33 were prepared on glass substrates using a solution process accompanied by a spin-coating technique. A phase transition between the cupric oxide monoclinic structure and the rock salt structure was observed with increasing concentrations of Mn and Sn, while the concentration of Cu simultaneously decreased in the precursors. The crystallite size decreased throughout the samples, reaching a minimum value of 9.8 nm at an equimolar ratio. Scanning electron microscopy further confirmed this downward trend and indicated an improvement in the quality of the film surfaces. According to the optical absorption measurements, the bandgap energy ranged from 2.68 to 3.44 eV. Interestingly, the sheet resistance of Cu1–2xMnxSnxO films dropped sharply from 5.24 kΩ/sq for CuO to 0.034 kΩ/sq for the film with a molar ratio of Cu:Mn:Sn being 34:33:33.
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