Abstract
Zinc oxysulfide (ZnOS) nano-thin film has been deposited on a p-type silicon and glass substrate via the hydrothermal deposition method at a temperature of 200 °C. The crystallographic information and morphological analysis of zinc oxysulfide (ZnOS) thin film have been done by X-ray diffraction (XRD) patterns and field effect scanning electron microscopy (FESEM). The chemical composition investigation of the ZnOS thin film was done by energy-dispersive X-ray spectroscopy (EDX). Ultraviolet-visible (UV–vis) and photoluminescence (PL) spectroscopy have been utilized for optical analysis. The electrical and electro-optical measurements of ZnOS thin film have been carried out by I-V characteristics in the visible light environment with a power density of 30 mW cm−2. It was found that zinc oxysulfide (ZnOS) thin film illustrates the facile responsive photodetection under visible light. The ZnOS thin film has a response time of 1.46 s and a recovery time is equal to 1.32 s. The specific detectivity of the deposited thin film was found to be 3.81 × 108 Jones. The responsivity of the deposited thin film is found 7.08 × 102 mA W−1.
Accepted Version
Published Version
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