We made exceptionally sensitive MIS structured diodes with positive photosensitivity in this case utilizing a single-phase crystalline material. With (0.02, 0.04, 0.06 and 0.08 M) different molar concentration and an ideal substrate temperature of 500 °C, MoO3 layer thin films were effectively produced on a glass substrate using the JNSP approach. The mean crystallite size of the films was found to decrease and their associated lattice parameters improved within molar concentration. Single-phase crystalline MoO3 films with orthorhombic crystal structure were detected in XRD analysis. Through FESEM images small plate-like surface morphology was seen to be randomly distributed. When O atomswere added to the Mo matrix, it improved optical absorption and reduced Eg values, which was investigated using the UV–Vis spectrum. When there is a larger concentration of Mo, the current–voltage (I–V) characteristics show the highest dc with low Ea values. For Cu/MoO3/p-Si type diodes, it was discovered that their corresponding ideality factor (n) decreased as the light intensity of the diodes increased to 120 mW/cm2. Significant photodiodemetrics including PS increased with Mo, and in particular the MIS diode manufacturedwith its 0.08 M exhibited superior results in which a remarkable higher responsivity was measured, also contributed to the improved performance.