Mo Substrate Research Articles

Synthesis and assessment of the Mo/MoO3/CZTS/Ag diode fabricated by one-pot hydrothermal route: impact of temperature

A facile one-step hydrothermal method was utilized to prepare Cu2ZnSnS4 film employing EDTA as a complexing agent. An effective Molybdenum oxide layer was also formed in the same approach for forming the Cu2ZnSnS4 film. The influence of preparation temperature on structural, morphology, and optical characteristics was studied. The formation of crystalline kesterite phase Cu2ZnSnS4 films with preferred orientation along the (112) plane was confirmed by X-ray diffraction and Raman spectroscopy, and it was also demonstrated that structure property changes with preparation temperatures: kesterite phase Cu2ZnSnS4 is formed at lower preparation temperatures and kesterite phase Cu2ZnSnS4 and Cu2S are formed with increasing preparation temperature. Also, Raman analysis confirmed the formation of a Molybdenum oxide layer on the Mo substrate. Field emission scanning electron microscopy revealed that surface morphology changes from leaves of trees to flake-flowers. According to UV-visible analysis, Cu2ZnSnS4 films exhibited high and wide absorbance spectra in the visible and infrared regions and a band gap between (1.67-1.9) eV. Photoluminescence analysis revealed emission peaks at (1.569, 1.55, and 1.56) eV for samples prepared at (160, 200, and 230)0C, respectively, which is very close to the band's gap of Cu2ZnSnS4. Finally, the electrical study of Mo/MoO3/CZTS/Ag junctions was performed by using current-voltage (I-V) measurement.

8.36% Efficient CZTS Solar Cells on Transparent Electrode via Solution Processing

High‐bandgap Cu2ZnSnS4 (CZTS) thin film solar cells on transparent electrodes show favorable characteristics for new photovoltaic application scenarios including building‐integrated photovoltaics, vehicle‐integrated photovoltaics, and top cell for tandem structure. However, the efficiency of pure sulfide kesterite CZTS thin film solar cells on transparent substrates lags behind that on traditional Mo substrates. Herein, fabrication of high‐quality CZTS absorber films and efficient solar cells on fluorine‐doped tin oxide substrates from dimethyl sulfoxide solution is reported. The formation of harmful secondary phases in CZTS film is suppressed by simply adjusting the chemical stoichiometry in the precursor solution, leading to the development of 5.88% CZTS solar cells. Sodium (Na) doping further promotes grain growth and suppresses secondary phase, contributing to the reduced interface recombination and improved device performance. A champion device with an efficiency of 8.36% has been achieved with 1% Na doping, underscoring the significance of the solution process in achieving highly efficient kesterite solar cells on transparent electrodes.

Low-temperature oxidation behavior and mechanism of hot-dip Al and Al[sbnd]Si coatings on Mo substrate at 600 °C in static air

The hot-dip Al and AlSi coatings are synthesized on Mo substrate at different temperatures. The microstructure and low-temperature oxidation behavior both of the coatings are investigated. The results indicate that hot-dip Al coating is mainly made up of an Al4Mo outer layer and an Al8Mo3 interface layer, while the hot-dip AlSi coating is consists of a Mo(Si, Al)2 inner layer and AlSi alloy outer layer containing Mo(Si, Al)2 grains. After exposed at 600 °C for 40 h, a large number of cracks initiate on surface and inside of the hot-dip Al coating, its mass gain per unit area (Δm) reach to 10.32 mg/cm2, and the RSa (average surface roughness) and Sdr (surface area growth rate) values increase from 0.216 μm and 6.602% before oxidation to 1.214 μm and 35.297%, respectively. During the oxidation process, the structure of the hot-dip AlSi coating is preserved intact, and almost no cracks are observed in the coating. After oxidized at 600 °C for 150 h, the Δm of hot-dip AlSi coating is only 1.56 mg/cm2, and the RSa and Sdr values increase from 0.458 μm and 7.083% to 1.509 μm and 43.586%, respectively. Besides, the oxidation rate constant (Kp) of hot-dip Al and AlSi coatings are 7.42 × 10−4 and 4.47 × 10−6 mg2·cm−4·s−1, respectively, and the latter is only 6.17 × 10−3 times than that of the former. The excellent oxidation resistance of hot-dip AlSi coating is attributed to its small grain size, stable and dense coating structure, and complex oxide layer composition.

Fabrication and growth mechanism of Al-Si coatings deposited on Mo substrate by hot dip plating technology

The Al-Si coatings with a low surface roughness were deposited on Mo substrate via the hot-dip plating technology, and the effects of deposition parameters on the microstructure, phase composition and surface roughness were systematically investigated. The results show that the hot-dip Al-Si coating is consist of a Mo(Si, Al)2 inner layer and an Al(Si)-Mo(Si, Al)2 outer layer. The coating surface is composed of Si(70.21–92.66 at%)-Al alloy phase containing Mo (Si, Al)2 grains and Al(73.83–92.32 at%)-Si alloy phase. With the increase of deposition temperature and the extension of time, the average grain area of Mo (Si, Al)2 increases from 0.264 μm2 to 0.623 μm2. The coating surface becomes smoother with the increase of deposition temperature, while rougher with the time. The maximum and minimum average surface roughness(RSa) values of the coating are 0.847 and 0.431μm, respectively. The coating thickness increased with the increase of deposition temperature and times. When the deposition temperature is 1000 ℃, the thickness value of the Mo (Si, Al)2 layer of the coating increases in a parabolic law with deposition time, and the Kp(reaction rate constant) is 4.5 ×10−13 m2/s. The growth of coatings is essentially a process of depositing Al, Si elements in the form of Mo (Si, Al)2 intermetallic compounds on Mo substrate.

Stability of titanium deuteride films irradiated with pulsed ion beams

Titanium deuteride films are widely used as target materials for neutron generators. Intense pulsed ion beams irradiated titanium deuteride films, and their structure stabilities were investigated by combination with scanning electron microscopy, transmission electron microscopy, grazing incidence angle X-ray diffraction, slow positron beam, scratch test and finite element analysis. The beam energy density was 0.3 J/cm2. Five different irradiation fluences of 3 × 1014, 1 × 1015, 3 × 1015, 1 × 1016, 3 × 1016 cm−2 were performed at room temperature. The adhesion strength between the film and Mo substrate decreased with increasing fluence. Moreover, surface melting and grain growth occurred after the beam irradiation with fluences over 3 × 1015 cm−2. The morphology of scratch tracks shows that the titanium deuteride film suffers a transition from ductile fracture to brittle fracture with increasing fluence. The reason for the decreasing adhesion strength was discussed via the introduction of thermal stress and lattice structure recovery. The research result is critical for evaluating the lifetime of titanium deuteride films based on failures in structures and a decrease in concentration of the inner deuterium.

Thermally tunable nonreciprocal radiation in lithography-free vanadium dioxide-dielectric-Weyl semimetal stack

Nonreciprocal thermal radiation (NTR) holds great promise in revolutionizing energy harvesting and conversion process, has become a hot topic of various research fields ranging from renewable energy, molecular sensing, to thermal circuitry and camouflage. Despite intensive effort into enhance the nonreciprocal response, static manipulation of NTR has limited the potential application, dynamic control of thermal radiation is highly demanded. Here, by using a multilayered stack comprised of vanadium dioxide (VO2) thin film, germanium (Ge) spacer layer, Weyl semimetal (WSM) layer terminated by molybdenum (Mo) substrate, we propose a thermally tunable nonreciprocal emitter. The effects of the incident angle (θi), azimuthal angle (ϕi), and the thickness of each layer for the VO2/Ge/WSM stack on the characteristics of thermal radiation have been discussed thoroughly. Dominant peaks and dips of nonreciprocity have been obtained with an incident angle of θi=60° and azimuthal angle of ϕi=0°. A switching effect between the near-unity nonreciprocity (”ON”) and zero nonreciprocity (”OFF”) states are induced when the temperature increases from 20 °C to 68 °C. It is shown that the magnitude and sign of the nonreciprocity can be managed simultaneously for transverse electric (s-) and transverse magnetic (p-) polarizations. The proposed structure shows good near-unity nonreciprocity stability in a wide range of θi and ϕi. This structurally lithography-free nonreciprocal thermal emitter not only provides the ability to tune nonreciprocal radiative properties, but also leads to the possible development of power scavenging and conversion devices.

Sluggish Electron Transfer of Oxygen-Terminated Moderately Boron-Doped Diamond Electrode Induced by Large Interfacial Capacitance between a Diamond and Silicon Interface.

Boron-doped diamond (BDD) has tremendous potential for use as an electrode material with outstanding characteristics. The substrate material of BDD can affect the electrochemical properties of BDD electrodes due to the different junction structures of BDD and the substrate materials. However, the BDD/substrate interfacial properties have not been clarified. In this study, the electrochemical behavior of BDD electrodes with different boron-doping levels (0.1% and 1.0% B/C ratios) synthesized on Si, W, Nb, and Mo substrates was investigated. Potential band diagrams of the BDD/substrate interface were proposed to explain different junction structures and electrochemical behaviors. Oxygen-terminated BDD with moderate boron-doping levels exhibited sluggish electron transfer induced by the large capacitance generated at the BDD/Si interface. These findings provide a fundamental understanding of diamond electrochemistry and insight into the selection of suitable substrate materials for practical applications of BDD electrodes.

Solution‐Processed Bifacial Cu(In, Ga)(S, Se)2 Thin‐Film Solar Cells with a Frontside Power Efficiency of 9.73%

Cu(In, Ga)(S, Se)2 (CIGSSe) solar cell is one of the most promising thin‐film solar cells with a record power conversion efficiency (PCE) of 23.6%. Conventional CIGSSe thin‐film solar cells are usually fabricated on Mo‐coated soda‐lime glass substrate, thereby, the sunlight on the rear side cannot be utilized by the monofacial CIGSSe solar cells owing to the opacity of the Mo electrode. CIGSSe solar cells fabricated on transparent conductive oxide (TCO) electrode enable to fabricate bifacial solar cells, which can generate power on both sides of solar cells, so that bifacial solar cells have a high potential application in building‐integrated photovoltaics. However, the PCEs of CIGSSe solar cells fabricated on TCO substrates are significantly lower than those of ones on Mo substrates. In this article, bifacial CIGSSe solar cells on fluorine‐doped tin oxide (FTO) substrate are fabricated by using an ionic liquid‐assisted solution approach and utilizing a MoO3 thin film as an interface layer between FTO and CIGSSe absorber layer, yielding a front‐side PCE of 9.73% and a back‐side PCE of 1.77%.

Micromorphology evolution, growth mechanism, and oxidation behaviour of the silicon-rich MoSi2 coating at 1200 °C in air

The silicon-rich MoSi2 coating with a submicron surface roughness is deposited on Mo substrate by the hot-dip silicon (HDS) plating process. The microstructure, phase composition, and growth mechanism of the silicon-rich MoSi2 coating are characterized. The oxidation kinetics and oxidation mechanism of the coated samples and bare Mo at 1200 °C are also analyzed and compared. The results indicate that the silicon-rich MoSi2 coating is comprised of Si outermost layer, MoSi2 intermediate layer and Mo5Si3 interface layer. The coating has a high surface silicon concentration and a dense structure, and the average surface roughness (RSa) is only 0.248 μm. After exposed at 1200 °C for 20 h, the per unit area weight change rate (Mc) of the coating is only 0.183 mg/cm2 and the thickness of oxide layer is 6.72 μm. The smooth surface, compact structure and excellent self-healing ability of the silicon-rich coating ensure its outstanding antioxidant.

Photoelectron spectroscopy of CsK2Sb photocathode at Synchrotron Radiation Facility using vacuum transport system

As accelerators and electron microscopes become more advanced, high-performance photocathodes are required. In particular, Cesium potassium antimonide (CsK2Sb) photocathode is of interest because of its low emittance, excitability in visible light, and high quantum efficiency (QE). The challenge is its high susceptibility to environment that lead to low operating vacuum pressure and short lifetime/low extraction charge. To resolve these issues, it is necessary to understand the molecular structure of the cathode and its degradation mechanism. In this study, we transported CsK2Sb photocathode to a beamline of synchrotron radiation facility using a vacuum transport system for molecular structure analysis. Specifically, the cathode was deposited in an evaporation system at Nagoya University. We transported it to Aichi Synchrotron Radiation Center (Aichi SR) located 15 km away, and analyzed it in the depth direction by X-ray photoelectron spectroscopy (XPS) at BL7U. Based on the results, we quantitatively evaluated the composition ratios and stoichiometry of the cathode elements (Sb, K, Cs). A Cs ex-cess state of surface was observed at the surface, and it is consistent with previous studies. The intended atomic structure of CsK2Sb was formed only at a few nanometres of the surface on the Mo substrate. On the other hand, the CsK2Sb cathode structure on the graphene substrate was preserved further in the depth direction.

Morphology, phase composition, surface roughness evolution and growth mechanism of hot-dip aluminum coating on Mo substrate

The Al-rich hot-dip aluminum composite coatings were synthesized on Mo surface by hot-dip aluminizing under different deposition processes. The aluminide coatings present a very smooth dense coating structure with a lower surface roughness and fine grain size, the average surface roughness (RSa) values are only 0.118–0.869 μm, and the corresponding surface area growth rate (Sdr) values are 3.85–80.19 %. Increasing the deposition temperature is beneficial for the transition of low melting point compounds of the coating surface to high melting point compounds, and extending the hot dip time is profit for the diffusion and enrichment of Al atoms on the coating surface. Besides, increasing the deposition temperature or time can also promote the growth of Al4Mo grains, thereby significantly increasing the coating thickness. When the deposition temperature is 750 °C, the thicknesses of Al4Mo and Al8Mo3 layers increases in a parabolic law with deposition time, and the Kp values both of them are 3.46 × 10−13 m2/s and 1.47 × 10−15 m2/s, respectively. The growth of the coating depends on the continuous diffusion of Al atoms towards the substrate direction, and the difference in chemical potential between Al atoms in each phase is the main driving force for coating growth.

The value of charge of Fe single to multiple atoms doped in Ge: Combined experimental and density functional theory study

With the aim to find out the value of an electronic charge that the Fe atoms acquire when they are doped in Ge bulk, a set of experimental and density functional theory (DFT) studies have been carried out of the model systems consisting of intermixed Fe–Ge films. Such films were prepared by electron and thermal evaporation in ultra-high vacuum (UHV) on the surface of Mo(110) substrate by initial formation of the Ge film of a mean thickness of 7.5 nm, onto which the Fe films were subsequently deposited, maintaining certain Fe to Ge concentration ratio, namely, 0.2, 0.4, 0.7 and 1.0. Annealing of such double Fe–Ge films results in notable interdiffusion of the components with quite uniform distribution of the elements throughout the intermixed layer. The details of formation of such layers were in-situ controlled by Auger electron spectroscopy (AES), low-energy ion scattering spectroscopy (LEIS), low-energy electron diffraction (LEED) and work function measurements, in combination with Ar ion depth profiling. By analyzing the Fe Auger LMM-triplet, the absolute values of the charge that Fe atoms acquire when doped in Ge, were estimated for four different Fe–Ge intermixed layers with above-mentioned different Fe to Ge concentration ratio. The corresponding plot of the charge versus Fe to Ge concentration allows to estimate the charge of a single doped Fe atom, which equals to +0.34e (electron charge units) and gradually decreases to 0.07e for high Fe concentration. To verify the experimental values of the Fe charge the calculations were done by periodic DFT as implemented in full-potential FHI-aims code. Among the used algorithms of Mulliken, Hirshfeld, and Bader's atoms-in-molecules, the latter gives good correlation between charges of Fe dopant and its concentration.

Oxidation behaviors of electrodeposited MoSi2 coating in a wide temperature range from 773 K to 1673 K

In this study, a MoSi2 coating was prepared on the surface of a molybdenum (Mo) substrate using the molten salt electrodeposition method, and the oxidation behavior of the coating over a wide temperature range from 773 K to 1673 K was studied in detail. The phase composition, surface and cross-sectional morphologies of the MoSi2 coatings after oxidation at various temperatures were characterized, and the evolution of the phase and microstructure were analyzed to elucidate the oxidation mechanism. The experimental results showed that the MoSi2 coating exhibited excellent oxidation resistance at lower temperatures (773 K) and did not experience the pesting phenomenon. When exposed to medium and high temperatures, a continuous and dense SiO2 layer was formed on the surface of the MoSi2 coating, which effectively prevented further oxidation inside the coating, thereby protecting the Mo substrate. Meanwhile, at higher temperatures, especially at 1473 K and 1673 K, the solid-phase diffusion of Si towards the substrate gradually transformed the MoSi2 into Mo5Si3 with a lower Si content. Notably, the thickness of the Mo5Si3 layer that was distributed between the original MoSi2 coating and the Mo substrate increased with the oxidation time and temperature. At 1673 K, a Mo3Si layer with a low Si content was formed beneath the Mo5Si3 layer. Thus, the diffusion of Si was an important factor restricting the service life of MoSi2 coating.

Back Contact Plasma Treatment Enables 14.5% Efficient Solution‐Processed CuIn(S,Se)2 Solar Cells

AbstractSolution‐processed chalcopyrite thin film solar cells have made great progress but still lag behind the vacuum‐based ones due to inferior absorber quality and non‐ideal interfaces. Here, plasma treatment of the molybdenum (Mo) substrate is reported to modify the back interface and improve the efficiency of solution‐processed copper indium sulfoselenide (CuIn(S,Se)2, CISSe) solar cells. The results show plasma treatment oxides the surface Mo/MoO2 to high oxidation oxides MoO3‐x (0 ≤ x < 1). The higher surface polarity greatly improves the wettability of the substrate to the precursor solution and results in formation of more compact and uniform precursor film, which grows to void‐free larger grains absorber film with better adhesion to the substrate. In addition, the much higher chemical stability of MoO3‐x than Mo significantly reduces the thickness of high resistive MoSe2 layer. The improved absorber quality and back interface property decreases charge carrier recombination in the absorber and back contact interface, resulting in 14.53% efficiency solution‐processed CISSe solar cell, which is improved by 13% compared to device without plasma treatment.

Microstructural and Mechanical Characterizations of Mo/W and Mo/Graphite Joints with BNi2 Paste

Brazing of Mo to W and to graphite is achieved using BNi2 paste (containing Ni, Cr, Si, and B). For the Mo/W or Mo/graphite joint, the joining area consists of a diffusion area and a brazing area. The diffusion area is composed of MoNi and Mo, which is formed by diffusion of the Mo substrate into the braze during brazing. The brazing area of the Mo/W joint contains Ni(ss) (solid solution), Cr(ss), Ni3B, CrB, and Ni4W, while the brazing area of the Mo/graphite joint mainly comprises Ni(ss), MoNi, Ni3B, and CrB. A continuous chromium carbide layer is formed at the brazing area/graphite interface in the Mo/graphite joint due to the reaction of Cr in the BNi2 braze with the graphite. Nanoindentation measurements of the joints show that the diffusion area exhibits the highest hardness and elastic modulus in the joints. The shear strengths of the Mo/W and Mo/graphite joints are 58.1 ± 16.0 and 13.0 ± 4.0 MPa, respectively. The Mo/W and Mo/graphite joints fracture after the shear tests in the W and graphite sides, respectively, near the joining area, indicating that both fractures are caused by the stress concentration in the corresponding areas.

Resonant Laser Induced Breakdown Spectroscopy for quantitative elemental depth profile analysis of WTa coating

This work reports on the procedure of Resonant-LIBS, in which ablation and subsequent excitation is achieved by fine-tuning an Optical Parametric Oscillator (OPO) laser to the resonant transition of tungsten (W I) at 255.14 nm and analyzing the optical emission spectroscopy results. Compared to conventional LIBS, the ablation rate is significantly reduced in the resonant regime, resulting in finer resolution of depth profiles. This reduction in ablation rate can be attributed to a process called Resonance Laser Ablation (RLA) where a part of the laser energy is employed for ablation, while the rest is dedicated to resonant excitation. The sample under consideration is a WTa-coated (7μm) Mo substrate prepared by a dual magnetron sputtering system. These efforts are motivated by the need for improvement in quantitative depth analysis of W-based Plasma-Facing Components (PFC). Particularly to target the undesirable surface modifications due to the interaction with H isotopes in fusion plasma, such as fuel retention or erosion/deposition.

Spectrum‐Selective High‐Temperature Tolerant Thermal Emitter by Dual‐Coherence Enhanced Absorption for Solar Thermophotovoltaics

AbstractSolar thermophotovoltaics (STPV) receive considerable attention for the record high energy transfer efficiency beyond conventional photovoltaics systems, which requires a well‐designed structured absorber/emitter and high operating temperature. However, the inherent tradeoff between increased operation temperature and material/structure stability (especially for the thermal emitters) severely hinders the development of STPV. In this work, a new design is proposed for a step‐function‐like thermal emitter based on a two‐path (quasi) coherent perfect absorption effect, which is experimentally enabled by a few‐layer Si/Mo/AlN lamellar film on a Mo substrate through a sequential physical vapor deposition process. The as‐prepared lamellar emitter exhibits maximal emissivity of ≈97% for 1.4 µm with excellent thermal suppression down to 10% across 3.4–10 µm, the performance of which is well maintained up to 973 K. When employed in the established STPV system, the dual coherent enhanced absorption (DCEA) system contributes to an increase of 20% in the total system efficiency compared to the unimodal coherent perfect absorption counterpart. The design proposed in this study provides a new methodology for improving the efficiency of the STPV system and may have significant applications in improving thermal energy regulation for compact systems.

Layer-By-Layer Assembly of Atomically Precise Alloy Nanoclusters Photosystems for Solar Water Oxidation.

Atomically precise metal nanoclusters (NCs) have garnered tremendous attention as light-harvesting antennas in heterogeneous photocatalysis due to unique atomic stacking mode, quantum confinement effect, and enriched active sites. However, metal NCs as photosensitizers suffer from extremely short carrier lifetime, poor photostability, and difficulty in carrier migration, which hinder the wide-spread utilization of metal NCs in solar energy conversion. To solve these problems, herein, Ag-doped glutathione (GSH)-capped gold NCs, i.e., alloy Au1- x Agx @GSH NCs and non-conjugated insulating polymer of poly(diallyl-dimethylammonium chloride) (PDDA) are utilized as the building blocks for layer-by-layer assembly of spatially multilayered alloy NCs/metal oxide (MO) photosystems. The alternately deposited ultrathin PDDA layer in-between Au1- x Agx @GSH NCs on the MO substrate functions as an efficient charge flow mediator to relay the directional photoelectron transfer over Au1- x Agx @GSH NCs, giving rise to the cascade charge transfer chain. This peculiar carrier migration mode endowed by exquisite interface configuration design significantly boosts the unidirectional electron migration from the Au1- x Agx @GSH NCs to the MO substrate, substantially improving the visible-light-driven photoelectrochemical water oxidation performances of MO/(PDDA-Au1- x Agx )n multilayer heterostructured photoanodes. The work will inspire the rational construction of alloy metal NCs-based photosystems for modulating spatially controllable charge transfer pathway for solar energy conversion.

A new route to fabricate high-quality double-side-polished freestanding diamond film

Freestanding diamond films are widely applied, but available fabrication techniques present obvious flaws. A new route to fabricate high-quality double-side-polished freestanding diamond film is proposed in this study. Typical MCD (Micro-crystalline diamond) or NCD (Nano-crystalline diamond) film is firstly deposited on pretreated SiC substrate by HFCVD technique. As-grown surfaces are smoothened by mechanical polishing. Diamond films are then separated from substrates by laser cutting. Finally, bottom surfaces, which are known as nucleated surfaces, are also polished. Compared with the Mo substrate used in the conventional route based on the natural peeling off of the diamond film, the thermal deformation and residual stress of the diamond film on the SiC substrate are smaller, mainly due to the reduced difference between thermal expansion coefficients of the diamond film and substrate. This is beneficial for avoiding the fracture of freestanding films in the cooling stage, and also beneficial for the subsequent polishing. Consequently, the interruptible repeated growth strategy with constant growth rates (1.0–1.2 μm/h for MCD and 1.3–1.5 μm/h for NCD) is feasible, and the long-duration operation of HFCVD device is dispensable. Compared with the Si substrate used in the route based on the Si etching, the SiC substrate is much more reusable in the present route.

Effect of Reaction Temperature on the Molten Salt Electrodeposition of Silicide Coating on Molybdenum Substrate and its Oxidation Behavior

In this study, silicide coatings were successfully prepared on Mo substrates using NaCl-KCl-NaF molten salt as the reaction medium and K2SiF6 as the silicon source. The electrochemical reduction mechanism of Si(IV) was studied by cyclic voltammetry and chronoamperometry technology. The effect of reaction temperature on the phase composition, microstructure, and growth kinetics of the electrodeposited coatings were investigated in detail. The long-term oxidation behaviors of Mo and MoSi2-coated Mo samples at 873 K were also compared. The results revealed that the electrodeposition of silicide coatings was closely related to the reaction temperature. Dense and coherent single-layer MoSi2 coatings could be obtained at 1023 K and 1073 K, while double-layer coatings with inner MoSi2 layer and outer Si layer could be obtained at 1123 K. Under the same electrodeposition time, the overall thickness of the silicide coatings increased with the reaction temperature. Moreover, long-term oxidation tests at 873 K proved that MoSi2 coatings could effectively prevent the Mo substrate from oxidation. The mass gain of the MoSi2-coated Mo sample was only 0.46 wt% after 500 h of oxidation, which could be attributed to the formation of the continuous SiO2 protective layer.