Abstract

Freestanding diamond films are widely applied, but available fabrication techniques present obvious flaws. A new route to fabricate high-quality double-side-polished freestanding diamond film is proposed in this study. Typical MCD (Micro-crystalline diamond) or NCD (Nano-crystalline diamond) film is firstly deposited on pretreated SiC substrate by HFCVD technique. As-grown surfaces are smoothened by mechanical polishing. Diamond films are then separated from substrates by laser cutting. Finally, bottom surfaces, which are known as nucleated surfaces, are also polished. Compared with the Mo substrate used in the conventional route based on the natural peeling off of the diamond film, the thermal deformation and residual stress of the diamond film on the SiC substrate are smaller, mainly due to the reduced difference between thermal expansion coefficients of the diamond film and substrate. This is beneficial for avoiding the fracture of freestanding films in the cooling stage, and also beneficial for the subsequent polishing. Consequently, the interruptible repeated growth strategy with constant growth rates (1.0–1.2 μm/h for MCD and 1.3–1.5 μm/h for NCD) is feasible, and the long-duration operation of HFCVD device is dispensable. Compared with the Si substrate used in the route based on the Si etching, the SiC substrate is much more reusable in the present route.

Full Text
Published version (Free)

Talk to us

Join us for a 30 min session where you can share your feedback and ask us any queries you have

Schedule a call