The value of charge of Fe single to multiple atoms doped in Ge: Combined experimental and density functional theory study

Abstract

With the aim to find out the value of an electronic charge that the Fe atoms acquire when they are doped in Ge bulk, a set of experimental and density functional theory (DFT) studies have been carried out of the model systems consisting of intermixed Fe–Ge films. Such films were prepared by electron and thermal evaporation in ultra-high vacuum (UHV) on the surface of Mo(110) substrate by initial formation of the Ge film of a mean thickness of 7.5 nm, onto which the Fe films were subsequently deposited, maintaining certain Fe to Ge concentration ratio, namely, 0.2, 0.4, 0.7 and 1.0. Annealing of such double Fe–Ge films results in notable interdiffusion of the components with quite uniform distribution of the elements throughout the intermixed layer. The details of formation of such layers were in-situ controlled by Auger electron spectroscopy (AES), low-energy ion scattering spectroscopy (LEIS), low-energy electron diffraction (LEED) and work function measurements, in combination with Ar ion depth profiling. By analyzing the Fe Auger LMM-triplet, the absolute values of the charge that Fe atoms acquire when doped in Ge, were estimated for four different Fe–Ge intermixed layers with above-mentioned different Fe to Ge concentration ratio. The corresponding plot of the charge versus Fe to Ge concentration allows to estimate the charge of a single doped Fe atom, which equals to +0.34e (electron charge units) and gradually decreases to 0.07e for high Fe concentration. To verify the experimental values of the Fe charge the calculations were done by periodic DFT as implemented in full-potential FHI-aims code. Among the used algorithms of Mulliken, Hirshfeld, and Bader's atoms-in-molecules, the latter gives good correlation between charges of Fe dopant and its concentration.