MIS Field Research Articles

Thin oxide films as surface modifiers of MIS field effect gas sensors

The catalytic activity at the surface of Pt based MIS field effect gas sensors is modified by the deposition of thin films of SnO 2, Al 2O 3 and SiO 2, grown by reactive sputtering. It is found that a very thin layer (<10 nm) of SiO 2 and SnO 2 changes the catalytic activity towards higher NH 3 selectivity, but with thicker films the sensor response vanishes. Since the response mechanism for these sensors is dependent on dissociation of molecules, it is likely that at low temperatures (140 °C), neither dissociation on nor transport/diffusion through the thicker films takes place. However, with Pt in conjunction with SiO 2 or SnO 2, the surface reactions will be altered, with enhanced NH 3 selectivity as a result. A thin film of Al 2O 3, on the other hand, has a much smaller influence on the gas response to the test gases used in this work. Furthermore the sputtering process is found to strongly influence the sensor responses, and specifically reduce the sensitivity of the sensor. A thin intermediate layer of evaporated Pt does not completely protect the underlying structure from sputter induced damage.

Stable gallium arsenide MIS capacitors and MIS field effect transistors by (NH/sub 4/)/sub 2/S/sub x/ treatment and hydrogenation using plasma deposited silicon nitride gate insulator

The beneficial effects of sulfur passivation of gallium arsenide (GaAs) surface by (NH/sub 4/)/sub 2/S/sub x/ chemical treatment and by hydrogenation of the insulator-GaAs interface using the plasma-enhanced chemical vapor-deposited (PECVD) silicon nitride gate dielectric film as the source of hydrogen are illustrated by fabricating Al/PECVD silicon nitride/n-GaAs MIS capacitors and metal insulator semiconductor field effect transistors (MISFET). Post metallization annealing (PMA) at temperatures in the range 450-550/spl deg/C is shown to be the key process for achieving midgap interface state density below 10/sup 11//cm/sup 2//eV and maximum incremental transconductance, which is about 75% of the theoretical maximum limit. MIS capacitors are fabricated on (NH/sub 4/)/sub 2/S/sub x/ treated GaAs substrate using gate dielectrics such as PECVD SiO/sub 2/ and silicon oxynitride to demonstrate that the PMA is less effective with these dielectrics because of their lower hydrogen content. The small signal AC transconductance, g/sub ms/ measurements on MISFETs fabricated using silicon nitride, have shown that the low-frequency degradation of g/sub ms/ is almost absent in the devices fabricated on (NH/sub 4/)/sub 2/S/sub x/-treated GaAs substrates and subjected to PMA. The drain current stability in these devices is demonstrated to be excellent, with an initial drift of only 2% of the starting value. The dual role of silicon nitride layer, namely, protection against loss of sulfur and an excellent source of hydrogen for additional surface passivation along with sulfur is demonstrated by comparing the transconductance of MISFETs fabricated on GaAs substrates annealed without the nitride cap after the (NH/sub 4/)/sub 2/S/sub x/ treatment.

Questions and Information: Contrasting Metaphors

This article examines metaphors for question asking, information and knowledge in the context of knowledge management. Metaphors discussed include: information is a resource, knowledge is a product, a good question is an irritant, and questions are the enemies of authority. The analysis draws on current theories of metaphor from the cognitive sciences as a basis for understanding the conceptual entailments of these terms for the MIS field. Churchman's inquiring systems are discussed as an example of a question-centric approach to knowledge management. The article concludes that a greater emphasis on inquiry would offer a beneficial perspective for practices concerned with information quality and knowledge management.

Not Either/Or: Research in Pasteur's Quadrant

Not Either/Or: Research in Pasteur's Quadrant

The Teaching of Telecommunications Management: Expectations and Delivery

Proper understanding of information technology needs is critical to IS undergraduate curricula design. Gaps between the industry requirements and academic curricula are prevalent. This research focuses on the telecommunications component of IS and identifies these gaps.Skills were classified as either micro or macro, where micro relates to technical competencies and macro to the understanding associated with higher level cognitive thinking. A questionnaire was created and administered to students in telecommunication management courses. The major findings are: (a) the students perceived that the telecommunication course adequately covered five micro (technical) and five macro (management) skills, and (b) the students perceived that the course did not adequately cover the macro skill of legislation skill.The contribution of this research to the MIS field is that it provides a detailed methodology for identifying the micro and macro skills and for measuring the level of knowledge students gain during a course.

Attitudes toward computers: when do they predict computer use?

Many people in the MIS field have accepted the idea that attitudes affect the frequency and type of computer use but research has provided inconsistent results. This paper, therefore, explores the conditions under which attitudes can predict computer use, investigating both workers' volitional control and their knowledge of the technology. Analyses are based on responses of 168 white-collar employees in 77 computer-using work groups. Attitudes were found to predict the number of hours of computer use for all workers, but only predicted the extent of job computerization for those who had real freedom of choice and knowledge about their computer system.

Future research in group support systems: needs, some questions and possible directions

Group support systems (GSS) represent one of the real success stories of research by the MIS academic community. There is no doubt that GSS academic research has had an impact on practice in the MIS field. This paper discusses the future of GSS research in terms of what is needed, some important research questions, and offers some possible directions. Section 1 describes what a GSS is and explains the underlying fundamental background. Section 2 explains why GSS research is needed. Section 3 describes the multimethodological approach that is needed for well-grounded GSS research programs. Section 4 discusses some of the major issues in applying GSS in organizational settings. Section 5 explores the scope of GSS research and the questions that need to be answered. Section 6 provides keys to successful distributed collaboration from our experience. Section 7 starts to answer the difficult question “what is needed for a distributed workspace?” Section 8 begins to clarify just what virtual reality can offer for distributed collaboration. Section 9 explains the justification for a virtual reality representation of the distributed office. Section 10 explores what we need to get real work done in a virtual workspace including: support for sense making during the process, automating bottlenecks in the process, modeling through simulation and animation, multiple languages, education, crisis response and software inspection. Research in GSS is just beginning and thousands of questions must be answered before we can have an understanding of the field.

A study of high‐temperature superconducting field‐effect transistors

AbstractThe MIS field effect has been confirmed in superconductors by effectively using a low carrier density in oxide high‐temperature superconductors. Based on this principle, a superconductor field effect transistor has been created. the experimental device uses an MIS diode and MISFET with Au/(100)SrTiO3/(001)YBaCuO structure grown by selective heteroepitaxy. the drain current could be decreased and increased by positive and negative gate fields. When cooled below the critical temperature, both the superconducting critical current and the flux‐flow resistance were modulated by the gate field. By approximating the high temperature superconductor with a degenerate semiconductor band model and introducing the Bardeen‐Stephen magnetic flux resistance and the flux‐creep concept, the operation mechanism of the superconductor MISFET can be explained.

10 Gbit/s operation of integrated BRS laser-MISFET on indium phosphide

An integrated 1.3 μm optoelectronic transmitter combining a BRS laser with an InP MIS field effect transistor has been made. Epitaxy of the laser structure in a groove was compatible with subsequent InP FET ion implantations and annealing. With 10 mA laser threshold current and 80 mS/mm FETs of 2 × 250 μm gate width, the module features a transfer efficiency of 12 mW/V, a small-signal bandwidth of 7GHz and an NRZ data rate of 10 Gbit/s.

Career Orientations of MIS Employees: An Empirical Analysis

The career orientations of employees can have important implications for their job satisfaction, commitment, and retention within organizations. However, there is little empirical research on the correlates of career orientations held by managers and professionals in the MIS field. This study sought to address this gap in the literature and assessed the career orientations of 464 MIS employees, as well as their relationship with selected demographic characteristics, job type, and career outcomes. The most prevalent career orientations of MIS employees were found to be technical and managerial. Autonomy and lifestyle orientations were also found to be moderately represented in the sample. Women were more lifestyle oriented and less technically oriented than men. In addition, systems programmers, applications programmers, and software engineers tended to be technically oriented, whereas systems analysts, project leaders, and computer managers tended to be managerially oriented. The most significant finding was that employees whose career orientations were compatible with their job setting reported high job satisfaction, high career satisfaction, strong commitment to their organization, and low intentions to leave their organization. Firms need to recognize the diversity of career orientations so that appropriate reward systems and career paths can be developed. Research on this topic should continue to examine characteristics unique to MIS employees, as well as how these interrelationships change over time at different career stages.

Managing new MIS professionals

Job search and career planning in the MIS field have received relatively little attention among academic researchers; and yet they are of significant concern to practitioners who are faced with the on-going task of attracting, retaining, and motivating their MIS professional staff. This paper presents the results of a recent study of university graduates who are about to enter the MIS field and combines these findings with work that has been done in other disciplines to lead to some recommendations for managers who are responsible for recruiting and managing new MIS professionals.

Internal field emission of microelectronic MIS structures

High field effects in special (ultraviolet (UV) treated, with graded-band-gap insulating layer multitips) MIS structures are considered. These structures have low interface barriers or high internal contact electric fields. A superposition of internal and additional external fields leads to a release of mobile ions, in particular protons. The dependence of the emission current on the properties of MIS structures and field strength are studied. The Poole-Frenkel mechanism is found to be responsible for the ionic component of the emission current. The parameters of this process have been determined. A new method for studying the kinetic characteristics of the internal electron emission taking into account carrier trapping processes has been developed. This technique makes it possible to determine the carrier effective masses as well as the interface barrier heights in MIS structures containing graded band-gap SiO x N y or other complex layers. The last part of the report is dedicated to field photoemission in MIS structures with emitter arrays containing tunnel-thin insulator films and a Schottky barrier. Along with Fowler-Nordheim photoemission, an anomalous photocurrent of the opposite polarity (infrared photocurrent) has been observed.

Internal field emission of microelectronic MIS structures

Abstract High field effects in special (ultraviolet (UV) treated, with graded-band-gap insulating layer multitips) MIS structures are considered. These structures have low interface barriers or high internal contact electric fields. A superposition of internal and additional external fields leads to a release of mobile ions, in particular protons. The dependence of the emission current on the properties of MIS structures and field strength are studied. The Poole-Frenkel mechanism is found to be responsible for the ionic component of the emission current. The parameters of this process have been determined. A new method for studying the kinetic characteristics of the internal electron emission taking into account carrier trapping processes has been developed. This technique makes it possible to determine the carrier effective masses as well as the interface barrier heights in MIS structures containing graded band-gap SiOxNy or other complex layers. The last part of the report is dedicated to field photoemission in MIS structures with emitter arrays containing tunnel-thin insulator films and a Schottky barrier. Along with Fowler-Nordheim photoemission, an anomalous photocurrent of the opposite polarity (infrared photocurrent) has been observed.

Can the field of MIS be disciplined?

Preoccupations about the present and future evolution of MIS as a scientific field seem to be gaining popularity among researchers. The authors contend that most models used by the investigators of the MIS field have been based on an inappropriate monistic view of science.

ION IMPLANTED InP MISFET's WITH LOW DRAIN CURRENT DRIFT

MIS field effect transistors on semi-insulating indium phosphide have been fabricated. The contacts and the channel are doped by silicon implantation. The gate dielectric is SiO 2 deposited under UV activation, Depletion-mode devices with a 2-micron channel length have a saturation current drift less than 10 per cent in 24 hours. They are compatible with a laser technology for integrated opto-electronics.

Alternative Quasi‐Classical Transport Equations. III. Charge Transport in MIS Systems with Inclusion of Diffuse Surface Scattering and Quantum Size Effects

AbstractOn the basis of the results of two preceding parts in this paper new expressions for the current density, the conductivity, and the local and effective mobility in the channel of a MIS field effect transistor are presented. For the first time in these expressions the following two different effects of the interface are taken into account simultaneously: (i) the vanishing of the wave functions at the interface as a quantum mechanical effect and (ii) incomplete specular reflection at the interface. Numerical results are given for the SiSiO2 system both, in the constant field approximation and for self‐consistent potentials in the range of surface fields between 2 × 104 and 3 × 105 V cm−1. The main new result is that the decrease of the mobility due to surface scattering is reduced by wave function effects giving so a much better agreement with experimental data of other authors. Problems of the influence of temperature and the consideration of an energy dependent relaxation time are discussed.

Alternative Quasi‐Classical Transport Equations. II. Boltzmann's Equation and the Electron Distribution Function for MIS Systems

AbstractIn Part I of this paper a new quasi‐classical formulation of transport equations in the framework of the local‐density approximation is reported including wave function effects due to the potential barrier near an interface. For practical applications to semiconductor devices the non‐equilibrium distribution function of the charge carriers is to be determined. In Part II this problem will be solved for a MIS field effect transistor as a typical example. For this system Boltzmann's equation is formulated and solved in a more general manner than before. The scattering processes in the bulk are considered together with partly diffuse interface scattering which is introduced by means of special boundary conditions. The transport properties of the MIS field effect transistor will be calculated later in Part III of this paper.

Modelling in Management Information Systems Design

The use of modelling in MIS field is discussed. A general methodology for MIS design, based on the concept of alternative solutions is outlined. An optimal allocation model, used for MIS structures synthesis, is presented. Modelling activities in the assessment of MIS structures are considered. Criteria of applicability of models are described. Applications of the developed methodology, models and program tools are pointed out.

A GaAs MISFET with Ge3N4 gate dielectric

GaAs MIS field effect transistors with a Ge3N4 dielectric gate have been investigated. No hysteresis loop and drain current drift has been observed in theI D -VDcharacteristics. However, performance of the devices have been found to be limited by the contact resistance. FromI DS 1/2 -VG plot, the threshold voltage and effective channel mobility of the transistor have been obtained as -4.5V and 2800cm2v−1s−1, respectively. A maximum dc transconductance of 68 mS/mm of gate width has been achieved.

Organizational arrangements for MIS units

Decisions on organizational arrangements for MIS units comprise location in the organization, rank of responsible executive, organization of MIS implementators, degree of centralization, the user interface, the study group, the steering committee, the data base administrator, the corporate computer staff, and external assistance. Based on a wide-ranging survey of papers in the field of MIS, the authors have formulated guidelines which derive from the impact of organizational decisions on the success or failure or MIS and MIS projects.