Abstract
AbstractOn the basis of the results of two preceding parts in this paper new expressions for the current density, the conductivity, and the local and effective mobility in the channel of a MIS field effect transistor are presented. For the first time in these expressions the following two different effects of the interface are taken into account simultaneously: (i) the vanishing of the wave functions at the interface as a quantum mechanical effect and (ii) incomplete specular reflection at the interface. Numerical results are given for the SiSiO2 system both, in the constant field approximation and for self‐consistent potentials in the range of surface fields between 2 × 104 and 3 × 105 V cm−1. The main new result is that the decrease of the mobility due to surface scattering is reduced by wave function effects giving so a much better agreement with experimental data of other authors. Problems of the influence of temperature and the consideration of an energy dependent relaxation time are discussed.
Published Version
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