Abstract
An integrated 1.3 μm optoelectronic transmitter combining a BRS laser with an InP MIS field effect transistor has been made. Epitaxy of the laser structure in a groove was compatible with subsequent InP FET ion implantations and annealing. With 10 mA laser threshold current and 80 mS/mm FETs of 2 × 250 μm gate width, the module features a transfer efficiency of 12 mW/V, a small-signal bandwidth of 7GHz and an NRZ data rate of 10 Gbit/s.
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