Abstract
Publisher Summary This chapter presents a discussion on the production and quality control of indium phosphide (InP) substrates. It describes the techniques related to InP single crystal materials and their characterization. The applications of InP crystals and the requirements for their quality is described in the chapter. The chapter reviews the details of crystal growth techniques, including recent developments obtained in laboratories. The techniques used in the evaluation, quality control, and wafer processing are also described in the chapter. InP single crystals have been used exclusively as conductive substrates for infrared optical devices. They are also under development as semi-insulating substrates usable in higher frequency microwave devices, such as metal–insulator–semiconductor field-effect transistor (MISFETs) and optoelectronic integrated circuits. There is a great demand for the development of higher quality indium phosphide single crystals. For this purpose, the technologies reviewed in the chapter, especially those concerning both the crystal growth and the processing of this material, are very important for future developments. Etch-pit density (EPD) is one of the best indicators of the quality of II–-V semiconductor crystals.
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