Ferroelectric materials have been utilized for non-volatile memory applications [1]. Beside extensive works on ferroelectric HfO2 thin film [2, 3], recent works on nitride-based materials have proven that AlxSc1-xN (ASN) also shows ferroelectricity with a box-like characteristic [4]. Commonly Pt electrodes with a large Schottky barrier are utilized to overcome the small bandgap of ASN. However, a high remnant polarization of over 100 µC/cm2 is attractive for future non-volatile memory applications. The purpose of this study is to measure the basic electrical properties of ASN films deposited by sputtering with W electrodes.50-, 75-, and 100-nm-thick ASN films were deposited by DC reactive sputtering with an Al0.57Sc0.43 target in Ar and N2 ambient at a substrate temperature of 400oC. Both top and bottom electrodes were deposited at room temperature.Leakage current characteristics of the fabricated metal-insulator-metal (MIM) capacitors indicate a breakdown field of 3 MV/cm. Temperature-dependent leakage current measurement has indicated a Schottky barrier height of 1.0 eV at W/ASN interface, which is rather small for memory application and needs to be engineered. Hysteresis in the polarization-voltage measurements can be hardly observed due to excess leakage current. However, ferroelectric hysteresis curves were obtained from capacitance-voltage (CV) measurements at 100 kHz for all the samples with different thicknesses. The coercive field taken from the hump in the CV curves was 0.9 MV/cm for 50-nm-thick sample and 1.4 MV/cm for 75 and 100 nm-thick samples, which are lower than the reported thick ASN samples [4], implying thickness-dependent properties of ASN films.In conclusion, JV and CV characteristics of sputter-deposited ASN films on W electrode were performed. Relatively low energy offset at metal/ASN interface was extracted. Ferroelectric hysteresis was obtained from CV measurement even for a film as thin as 50 nm.