Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications

Abstract

Diamond-like carbon (DLC) has been studied as a dielectric material for future metal–insulator–semiconductor (MIS) technology. In this paper, ultrathin DLC films were deposited on silicon substrates by using the dc magnetron sputtering technique at various deposition voltages. The current–voltage characteristics indicated that the leakage currents of the MIS devices decreased with an increase in deposition voltages, and that a low leakage current ([Formula: see text] A/cm2) was achieved at −2 V bias voltage. The deposition voltage effects on the structures of films were investigated through Raman spectroscopy, which indicated that the sp3 bonding fraction decreased with an increase in the deposition voltage. The ramp-voltage breakdown test revealed high effective breakdown electric field ([Formula: see text]85 MV/cm) for the MIS device with the DLC film deposited at 1100-V deposition. Stress-induced leakage current measurement indicated that the DLC film exhibited excellent reliability.