Abstract
Nitride-based materials including AlxSc1-xN (ASN) films have also been proven to show a ferroelectricity with a box-like characteristic recently. In this paper, ASN thin films were deposited by RF sputtering with different metal electrode materials, Al, W, TiN and Ni. Leakage current measurements hardly showed difference among the electrode materials. A Schottky barrier height (SBH) at metal/ASN interface was as small as 0.86 eV, irrespective to the electrode material, suggesting a strong Fermi level pinning (FLP). Capacitance-voltage (CV) measurements revealed ferroelectric-like hysteresis behavior for all the electrode materials.
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