Magnetoresistance Ratio Research Articles

A novel time-domain in-memory computing unit using STT-MRAM

Advancements in technologies like Big Data, IoT, and AI have revealed a bottleneck in traditional von-Neumann architecture, resulting in high energy consumption and limited memory bandwidth. In-memory computing (IMC) presents a promising solution by enabling computations directly within the memory, enhancing energy-efficient computing. The existing time-domain (TD)-based IMC computations either require multiple cycles for computation through a successive read/write approach or contribute to the complexity of the peripheral circuit by adopting a cumulative delay approach. In this paper, we present a novel array architecture that utilizes spin transfer torque magnetic random access memory (STT-MRAM) bit-cells, mitigating source degeneration issue. By leveraging this advanced technology and employing a TD computing scheme, we have successfully implemented various arithmetic operations, alongside a comprehensive set of Boolean logic operations. Our design demonstrates improved area and energy efficiency compared to other existing TD computing schemes. Furthermore, despite the higher delay, our parameter-driven optimization approach efficiently minimizes it. To validate our proposal, we performed simulations using the 45 nm CMOS process and the Verilog-A based magnetic tunnel junction (MTJ) compact model. Through meticulous Monte-Carlo simulations, considering CMOS variations, the results demonstrate enhanced computational accuracy with increasing Tunnel Magnetoresistance (TMR) ratio, showcasing the potential of our architecture in advancing the field of computing.

Highly Energy‐Efficient Spin‐Orbit‐Torque Magnetoresistive Memory with Amorphous W─Ta─B Alloys

AbstractThe spin Hall effect enables fast and reliable writing operations for next‐generation spin‐orbit‐torque magnetoresistive random‐access memories (SOT‐MRAMs). To develop SOT‐MRAMs; however, the spin Hall material should have a sufficiently low writing energy and high annealing stability for the semiconductor integration process. Thus far, none of the crystalline‐based spin Hall materials are able to satisfy these requirements. Here, a promising solution for SOT‐MRAMs is provided using amorphous W─Ta─B alloys. Even without a long‐range crystal order, W─Ta─B alloys exhibit both large effective spin Hall angles up to 40% derived from a Ta substitutional doping and superior annealing stability (up to 400 °C) due to the addition of B, enabling them to satisfy both requirements. Nanoscale three‐terminal SOT‐MRAM cells are fabricated, and these are demonstrated to have high magnetoresistance ratios (up to 130%) and extremely low intrinsic switching current densities (down to 4 × 106 A cm−2). These results show that amorphous spin Hall materials can provide the key for realizing high‐performance SOT‐MRAMs.

Reconfigured Self-Referenced MRAM Cell Supporting 2.527-fJ/bit Reading and In Situ Multiplication

The development of nonvolatile memories (NVM) based normally-off, instantly-on applications is hindered by high energy consumption for data readout. In particular, magnetic random access memory (MRAM) is a promising candidate for embedded non-volatile memory for its high cell density, high endurance and compatibility with the CMOS process. However, considering the low tunneling magnetoresistance ratio (TMR) of standard 1T1MTJ bit-cell, the state-of-art voltage sensing amplifiers (VSA) and current sensing amplifiers (CSA) need the direct current path to build considerable voltage or current difference. This paper demonstrates a reconfigured latch-based 4T2MTJ bit-cell achieving 2.527-fJ/bit ultra-low-power data readout at 0.4-V read voltage. Simulated results show that 2-ns latency can be realized with a traditional VSA and parasitic capacitance. The proposed 4T2MTJ bit-cell can perform in-situation (in-situ) multiplication between stored data and input with negligible extra energy consumption.

Tunnel-magneto resistance of double-barrier tunnel junctions in the presence of spin-orbit coupling within spin-filter barriers

The tunnel magneto-resistance ratio is investigated for double-barrier tunnel junctions with spin-filter (magnetic insulators) barriers. The transmission probability is calculated in the tight-binding model by the non-equilibrium Green's function formalism considering spin-orbit coupling within barriers. The formation of resonant states inside a non-magnetic spacer gives rise to an enhancement in tunnel magneto-resistance ratio. Double spin-filter tunnel junctions have also shown a higher tunnel magneto-resistance ratio compared to that in double-barrier magnetic tunnel junctions. These findings will be valuable to improve the performance of spintronics devices.

Orbital Hall magnetoresistance in Ni/Ti bilayers

We report the observation of the orbital counterpart of the spin Hall magnetoresistance (SMR): the orbital Hall magnetoresistance (OMR). We measured angular-dependent longitudinal magnetoresistance for Ni/Ti bilayer and Ni single-layer films by rotating a magnetic field along three orthogonal planes. When the magnetic field is rotated in the plane perpendicular to the applied current direction, the angular dependence of the magnetoresistance in the Ni/Ti bilayers is consistent with the prediction of the SMR and OMR, whereas that in the Ni single-layer film can be attributed to the geometrical size effect of the anisotropic magnetoresistance. In the Ni/Ti bilayers, the magnetoresistance ratio is found to be five orders of magnitude larger than the prediction of the SMR, indicating that the OMR plays a dominant role in this system.

Magnetic anisotropy instability due to magnetic field annealing in Ta/MgO/NiFe/MgO/Ta anisotropic magnetoresistive sensors

Ta/MgO/NiFe/MgO/Ta anisotropic magnetoresistive thin film sensors, which can be used for magnetic scales, were prepared. To improve the magnetoresistance ratio of the sensors, these sensors were vacuum-annealed with the magnetic field applied, and then, both the static and dynamic magnetoresistive responses of the sensors were obtained. The experimental results have shown that the instability of magnetic anisotropy occurs in the sensors after vacuum-annealing, leading to the significant hysteresis and abnormal output voltage peaks. To investigate the underlying physics, the distribution of the non-uniform demagnetizing field along the width of an anisotropic magnetoresistive (AMR) strip is considered, and both the static and dynamic responses of the AMR elements have been calculated on the basis of the Stoner–Wohlfarth model. The results have shown that the calculated results are in good agreement with the experimental data. The calculated results have revealed that the angles between the anisotropic field and the external magnetic field are different during the field cyclings of Hmax (maximum magnetic field) to −Hmax and −Hmax to Hmax. The angle difference is up to 6°, leading to different magnetoresistive responses. This paper is helpful for the understanding about the magnetization rotations in magnetic sensors and the manufacturing of sensors.

The Influence of Capping Layers on Tunneling Magnetoresistance and Microstructure in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions upon Annealing.

This study investigates the effects of annealing on the tunnel magnetoresistance (TMR) ratio in CoFeB/MgO/CoFeB-based magnetic tunnel junctions (MTJs) with different capping layers and correlates them with microstructural changes. It is found that the capping layer plays an important role in determining the maximum TMR ratio and the corresponding annealing temperature (Tann). For a Pt capping layer, the TMR reaches ~95% at a Tann of 350 °C, then decreases upon a further increase in Tann. A microstructural analysis reveals that the low TMR is due to severe intermixing in the Pt/CoFeB layers. On the other hand, when introducing a Ta capping layer with suppressed diffusion into the CoFeB layer, the TMR continues to increase with Tann up to 400 °C, reaching ~250%. Our findings indicate that the proper selection of a capping layer can increase the annealing temperature of MTJs so that it becomes compatible with the complementary metal-oxide-semiconductor backend process.

Multiple magnetoplasmon polaritons of magneto-optical graphene in near-field radiative heat transfer

Graphene, as a two-dimensional magneto-optical material, supports magnetoplasmon polaritons (MPP) when exposed to an applied magnetic field. Recently, MPP of a single-layer graphene has shown an excellent capability in the modulation of near-field radiative heat transfer (NFRHT). In this study, we present a comprehensive theoretical analysis of NFRHT between two multilayered graphene structures, with a particular focus on the multiple MPP effect. We reveal the physical mechanism and evolution law of the multiple MPP, and we demonstrate that the multiple MPP allow one to mediate, enhance, and tune the NFRHT by appropriately engineering the properties of graphene, the number of graphene sheets, the intensity of magnetic fields, as well as the geometric structure of systems. We show that the multiple MPP have a quite significant distinction relative to the single MPP or multiple surface plasmon polaritons (SPPs) in terms of modulating and manipulating NFRHT. We demonstrate that this remarkable behavior is attributed to the coupling between the significant contributions of surface states at multiple surfaces and Shubnikov–de Haas-like oscillations in the spectrum, indicating a transformation of intraband and interband transitions. Notably, we find that the evolution from single MPP to multiple MPP is absolutely different from that from single SPPs to multiple SPPs. Finally, a thermal magnetoresistance effect and a negative-positive transition of the relative thermal magnetoresistance ratio are predicted in the multilayered system under consideration. Our study paves the way for a flexible control of NFRHT and it offers the possibility for the thermal photon-based communication technology and a magnetically controllable thermal switch.

Effect of spin-orbit coupling within the spin-filter layer on the tunnel magneto-resistance in spin-filter magnetic tunnel junctions

The tunnel magneto-resistance ratio is investigated for spin-filter magnetic tunnel junctions in the presence of spin–orbit coupling within a spin-filter layer. The non-equilibrium Green’s function formalism is utilized to calculate the transmission function in the linear-response limit. The results show that a larger tunnel magneto-resistance is achieved for spin-filter magnetic tunnel junctions compared to that for conventional magnetic tunnel junctions due to the existence of a spin-filter layer. Therefore, the current findings can be introduced new routes to improve the field of spintronics.

Room-Temperature and Tunable Tunneling Magnetoresistance in Fe3GaTe2-Based 2D van der Waals Heterojunctions.

Magnetic tunnel junctions (MTJs) based on van der Waals (vdW) heterostructures with sharp and clean interfaces on the atomic scale are essential for the application of next-generation spintronics. However, the lack of room-temperature intrinsic ferromagnetic crystals with perpendicular magnetic anisotropy has greatly hindered the development of vertical MTJs. The discovery of room-temperature intrinsic ferromagnetic two-dimensional (2D) crystal Fe3GaTe2 has solved the problem and greatly facilitated the realization of practical spintronic devices. Here, we demonstrate a room-temperature MTJ based on a Fe3GaTe2/WS2/Fe3GaTe2 heterostructure for the first time. The tunneling magnetoresistance (TMR) ratio is up to 213% with a high spin polarization of 72% at 10 K, the highest ever reported in Fe3GaTe2-based MTJs up to now. A tunneling spin-valve signal robustly persists at room temperature (300 K) with a bias current down to 10 nA. Moreover, the spin polarization can be modulated by bias current and the TMR shows a sign reversal at a large bias current. Our work sheds light on the potential application of low-energy consumption in all-2D vdW spintronics and offers alternative routes for the electronic control of spintronic devices.

The Effect of Wetfix and Nanohydrated Lime Additives on Bitumen Aging and the Cohesion and Adhesion Failure Mechanisms of Hot Asphalt Mixtures

Aging due to sunlight and the passage of time is an effective element in the occurrence of moisture damage in hot asphalt mixtures. Still, the effects of this parameter are scarcely considered in the experiments examining the moisture damage potential. Accordingly, this study investigated the effect of aging on the performance of hot asphalt mixtures and examined the improvement of moisture damage performance by using antistripping additives via mechanism and functional tests. Two types of aggregates (limestone and granite) with different degrees of moisture sensitivity, two types of bitumen (PG64-16 and PG58-22) with different performances, and two additives (Wetfix liquid additive and nanohydrated lime) as bitumen modifiers were used. Bitumen samples and asphalt mixtures were subjected to short- and long-term aging. The pull-off test was performed to explore the aging effect on different failure mechanisms (cohesion and adhesion), and the indirect tensile stiffness modulus (ITSM) test was conducted to study the asphalt mixture’s performance against moisture damage. The results specify that aging, in terms of hot asphalt mixture hardening in dry and wet conditions, decreased the MSR (resilient modulus wet to resilient modulus dry ratio), and this decline was greater in long-term aging. The pull-off test results exhibited that aging, especially in the long term, decreased the asphalt mixture’s adhesive strength in dry and wet conditions; this decline in adhesion was greater in the wet than in the dry state, and this difference decreased the wet-to-dry adhesion strength ratio (the pull-off ratio). The additives relatively improved the yield modulus of the asphalt mixture, but their effect was greater in the wet state. A comparison of the pull-off test results in cohesion and adhesion failure demonstrated that Wetfix was more effective in improving bitumen–aggregate adhesion, whereas nanohydrated lime was more effective in enhancing bitumen adhesion. The resilient modulus (Mr) ratio in wet-to-dry conditions indicated that nanohydrated lime had better effects on the overall performance of the aged asphalt mixture against moisture damage. To investigate the effect of additives on the performance of asphalt mixtures, a t-test was performed in all modes of control, short-term aging, and long-term aging. The findings showed the effect of Wetfix and nanohydrated lime on increasing the modulus of elasticity of the samples.

Design of behavior prediction model of molybdenum disulfide magnetic tunnel junctions using deep networks

Magnetic tunnel junctions (MTJ) are widely used in spintronics development owing to their high scalability and minimal power consumption. However, analyzing the electrical and magnetic behaviors of MTJ in real-time applications is challenging. In this study, an MTJ based on molybdenum disulfide (MoS2) is designed, and a novel deep Elman neural behavior prediction model is developed to analyze its behavior. MoS2 acts as a tunnel barrier in the proposed model, whereas iron oxide (Fe3O4) acts as a ferromagnetic electrode. The interface between Fe3O4 and MoS2 in the MTJ improves the spin polarization and tunnel magnetoresistance ratio. Herein, the performance parameters of the MTJ are used as inputs for the developed prediction model, which analyzes the magnetic and electrical properties of the MTJ using prediction parameters. The spin currents in the parallel and antiparallel configurations are also determined. The designed model is implemented using MATLAB and validated by comparing simulation and experimental results. Moreover, a maximum resistivity of 91 Ω is attained at a temperature of 300 K for the proposed model. At 120 K, under a positive bias, the proposed model achieves a TMR ratio of 0.936. Under negative bias, the maximum TMR ratio attained by the proposed model is 0.817.

Deterministic Magnetization Reversal in Synthetic Antiferromagnets using Natural Light.

Traditional current-driven spintronics is limited by localized heating issues and large energy consumption, restricting their data storage density and operation speed. Meanwhile, voltage-driven spintronics with much lower energy dissipation also suffers from charge-induced interfacial corrosion. Thereby finding a novel way of tuning ferromagnetism is crucial for spintronics with energy-saving and good reliability. Here, a visible light tuning of interfacial exchange interaction via photoelectron doping into synthetic antiferromagnetic heterostructure of CoFeB/Cu/CoFeB/PN Si substrate is demonstrated. Then, a complete, reversible magnetism switching between antiferromagnetic (AFM) and ferromagnetic (FM) states with visible light on and off is realized. Moreover, a visible light control of 180° deterministic magnetization switching with a tiny magnetic bias field is achieved. The magnetic optical Kerr effect results further reveal the magnetic domain switching pathway between AFM and FM domains. The first-principle calculations conclude that the photoelectrons fill in the unoccupied band and raise the Fermi energy, which increases the exchange interaction. Lastly, a prototype device with visible light control of two states switching with a 0.35% giant magnetoresistance ratio change (maximal 0.4%), paving the way toward fast, compact, and energy-efficient solar-driven memories is fabricated.

Enhancing spin-transfer torque in magnetic tunnel junction devices: Exploring the influence of capping layer materials and thickness on device characteristics

We have developed and optimized two categories of spin-ransfer torque magnetic tunnel junctions (STT-MTJs) that exhibit a high tunnel magnetoresistance ratio, low critical current, high outputpower in the micro-watt range, and auto-oscillation behavior. These characteristics demonstrate the potential of STT-MTJs for low-power, high-speed, and reliable spintronic applications, including magnetic memory, logic, and signal processing. The only distinguishing factor between the two categories, denoted as A-MTJs and B-MTJs, is the composition of their free layers, two CoFeB/0.21 Ta/6 CoFeSiB for A-MTJs and two CoFeB/0.21 Ta/7 NiFe for B-MTJs. Our study reveals that B-MTJs exhibit lower critical currents for auto-oscillation than A-MTJs. We found that both stacks have comparable saturation magnetization and anisotropy field, suggesting that the difference in auto-oscillation behavior is due to the higher damping of A-MTJs compared to B-MTJs. To verify this hypothesis, we employed the all-optical time-resolved magneto-optical Kerr effect technique, which confirmed that STT-MTJs with lower damping exhibited auto-oscillation at lower critical current values. Additionally, our study aimed to optimize the STT-MTJ performance by investigating the impact of the capping layer on the device’s response to electronic and optical stimuli.

Anisotropic magnetic and magnetotransport properties in morphologically distinct Nd0.6Sr0.4MnO3 thin films

We investigate the magnetic and magnetotransport properties of nanostructured Nd0.6Sr0.4MnO3 (NSMO) thin films grown on (100) oriented SrTiO3 (STO) substrates. The thin films of 100 nm thickness fabricated using the pulsed laser deposition technique possess two distinct surface morphologies—granular and nano-rod type. The morphological change present in the system significantly affects the magnetic and magnetotransport properties of the thin films. Magnetization measurements revealed that the films with rod-type morphology exhibit improved in-plane magnetic anisotropy. The colossal magnetoresistance (∆R/R(H = 0)) of the granular sample is ∼91 %, and the rod morphology sample is ∼97 % at 3 T magnetic field. Additionally, magnetotransport studies revealed that the granular thin films display a characteristic butterfly-shaped low-field magneto-resistive (LFMR) behavior with the value of LFMR of up to ∼10 %. Furthermore, it is observed that the thin film’s morphology has a significant effect on the anisotropic magnetoresistance ratio (AMR). Thin films with rod-type morphology show an enhanced AMR of ∼30 % around its metal-insulator transition temperature. Such morphology-dependent tunability in magnetoresistance properties over a wide temperature range is potentially interesting for developing oxide-based sensors and devices.

A 6T-3M SOT-MRAM for in-memory computing with reconfigurable arithmetic operations

Traditional von Neumann architecture bottlenecks such as the “memory wall” limit artificial intelligence (AI) development, and in-memory computing (IMC) as a new computing architecture can solve the above problems. Spin-orbit-torque-magnetic random access memory (SOT-MRAM) has very good advantages in IMC architecture because of its good compatibility with CMOS, high tunneling magnetoresistance (TMR) ratio, and high energy efficiency. In this paper, we propose a 6T-3M-based MRAM-IMC architecture with reconfigurable memory mode and logical operation mode. The functionality of the proposed architecture is validated using the 28 nm process design kit and the SOT-MTJ model.

High spin current density in gate-tunable spin-valves based on graphene nanoribbons

The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the goal of the effort. A sufficiently large spin current density is indispensable for the writing mode of MRAMs to switch states. How to attain spin current density beyond critical values around 5 MA/cm2 in 2D materials at room temperature is the greatest obstacle to overcome. Here, we first theoretically propose a spin valve based on graphene nanoribbons (GNRs) to generate a huge spin current density at room temperature. The spin current density can achieve the critical value with the help of tunable gate voltage. The highest spin current density can reach 15 MA/cm2 by adjusting the band gap energy of GNRs and exchange strength in our proposed gate-tunable spin-valve. Also, ultralow writing power can be obtained, successfully overcoming the difficulties traditional magnetic tunnel junction-based MRAMs have faced. Furthermore, the proposed spin-valve meets the reading mode criteria and the MR ratios are always higher than 100%. These results may open the feasibility avenues for spin logic devices based on 2D materials.

The In Situ Optimization of Spinterface in Polymer Spin Valve by Electronic Phase Separated Oxides.

Tailoring the interface between organic semiconductor (OSC) and ferromagnetic (FM) electrodes, that is, the spinterface, offers a promising way to manipulate and optimize the magnetoresistance (MR) ratio of the organic spin valve (OSV) devices. However, the non-destructive in situ regulation method of spinterface is seldom reported, limiting its theoretical research and further application in organic spintronics. (La2/3 Pr1/3 )5/8 Ca3/8 MnO3 (LPCMO), a recently developed FM material, exhibits a strong electronic phase separation (EPS) property, and can be employed as an effective in situ spinterface adjuster. Herein, we fabricated a LPCMO-based polymer spin valve with a vertical configuration of LPCMO/poly(3-hexylthiophene-2,5-diyl) (P3HT)/Co, and emphasized the important role of LPCMO/P3HT spinterface in MR regulation. A unique competitive spin-scattering mechanism generated by the EPS characteristics of LPCMO inside the polymer spin valve was discovered by abstracting the anomalous non-monotonic MR value as a function of pre-set magnetic field (Bpre ) and temperature (T). Particularly, a record-high MR ratio of 93% was achieved in polymer spin valves under optimal conditions. These findings highlight the importance of interdisciplinary research between organic spintronics and EPS oxides and offer a novel scenario for multi-level storage via spinterface manipulation.

Abnormal thickness-dependent magneto-transport properties of vdW magnetic semiconductor Cr2Si2Te6

Cr2Si2Te6 (CST) is a van der Waals (vdW) ferromagnetic semiconductor. The unique spin model and temperature-dependent magnetic ordering of CST provide opportunities for the next generation of two-dimensional (2D) spintronic devices. Here, abnormal magneto-transport properties are found in CST nanoflakes with variations in thickness. Interestingly, the thickness-dependent magnetoresistance (MR) effect exhibits a nonlinear change as a function of the magnetic field, temperature, and thickness. At a certain temperature below Curie temperature (Tc), a sign reversal of MR ratio from positive to negative can even be detected with thickness reduction. At the temperature range from Tc to 60 K, the Hall effect also presents a transformation from nonlinear behavior in thick layer CST to linear behavior in thin layer CST. These distinctive magneto-transport properties are attributed to the variation of spin correlation with thickness in CST nanoflakes. These findings probe the unique magneto-transport properties of CST and associate it with ferromagnetic correlation, which provides a basis for subsequent spintronics device design based on this material. This work also offers new insights into the relationship between sample thickness, transport properties, and spin correlation of other vdW ferromagnets. It lays a foundation for future vdW magnet-based device fabrication and possible spintronic applications.

Giant Spin-Valve Effect in Planar Spin Devices Using an Artificially Implemented Nanolength Mott-Insulator Region.

Developing technology to realize oxide-based nanoscale planar integrated circuits is in high demand for next-generation multifunctional electronics. Oxide circuits can have a variety of unique functions, including ferromagnetism, ferroelectricity, multiferroicity, superconductivity, and mechanical flexibility. In particular, for spin-transistor applications, the wide tunability of the physical properties due to the presence of multiple oxide phases is valuable for precise conductivity matching between the channel and ferromagnetic electrodes. This feature is essential for realistic spin-transistor operations. Here, a substantially large magnetoresistance (MR) ratio of up to ≈140% is demonstrated for planar-type (La,Sr)MnO3 (LSMO)-based spin-valve devices. This MR ratio is 10-100 times larger than the best values obtained for semiconductor-based planar devices, which have been studied over the past three decades. This structure is prepared by implementing an artificial nanolength Mott-insulator barrier region using the phase transition of metallic LSMO. The barrier height of the Mott-insulator region is only 55 meV, which enables the large MR ratio. Furthermore, a successful current modulation, which is a fundamental functionality for spin transistors, is shown. These results open up a new avenue for realizing oxide planar circuits with unique functionalities that conventional semiconductors cannot achieve.