Abstract
Traditional von Neumann architecture bottlenecks such as the “memory wall” limit artificial intelligence (AI) development, and in-memory computing (IMC) as a new computing architecture can solve the above problems. Spin-orbit-torque-magnetic random access memory (SOT-MRAM) has very good advantages in IMC architecture because of its good compatibility with CMOS, high tunneling magnetoresistance (TMR) ratio, and high energy efficiency. In this paper, we propose a 6T-3M-based MRAM-IMC architecture with reconfigurable memory mode and logical operation mode. The functionality of the proposed architecture is validated using the 28 nm process design kit and the SOT-MTJ model.
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