Magnetic anisotropy instability due to magnetic field annealing in Ta/MgO/NiFe/MgO/Ta anisotropic magnetoresistive sensors

Abstract

Ta/MgO/NiFe/MgO/Ta anisotropic magnetoresistive thin film sensors, which can be used for magnetic scales, were prepared. To improve the magnetoresistance ratio of the sensors, these sensors were vacuum-annealed with the magnetic field applied, and then, both the static and dynamic magnetoresistive responses of the sensors were obtained. The experimental results have shown that the instability of magnetic anisotropy occurs in the sensors after vacuum-annealing, leading to the significant hysteresis and abnormal output voltage peaks. To investigate the underlying physics, the distribution of the non-uniform demagnetizing field along the width of an anisotropic magnetoresistive (AMR) strip is considered, and both the static and dynamic responses of the AMR elements have been calculated on the basis of the Stoner–Wohlfarth model. The results have shown that the calculated results are in good agreement with the experimental data. The calculated results have revealed that the angles between the anisotropic field and the external magnetic field are different during the field cyclings of Hmax (maximum magnetic field) to −Hmax and −Hmax to Hmax. The angle difference is up to 6°, leading to different magnetoresistive responses. This paper is helpful for the understanding about the magnetization rotations in magnetic sensors and the manufacturing of sensors.