Abstract
The tunnel magneto-resistance ratio is investigated for double-barrier tunnel junctions with spin-filter (magnetic insulators) barriers. The transmission probability is calculated in the tight-binding model by the non-equilibrium Green's function formalism considering spin-orbit coupling within barriers. The formation of resonant states inside a non-magnetic spacer gives rise to an enhancement in tunnel magneto-resistance ratio. Double spin-filter tunnel junctions have also shown a higher tunnel magneto-resistance ratio compared to that in double-barrier magnetic tunnel junctions. These findings will be valuable to improve the performance of spintronics devices.
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