Magnetoresistance Values Research Articles

Enhanced giant magnetoresistance in Heusler alloy (Co2FeSi/Ag)N multilayers for read sensor applications

Abstract We theoretically investigate the spin transport behavior of multilayer [ Co 2 FeSi / Ag ] N structure for the application of next-generation read sensors in hard disk drive. To demonstrate the potential of the Heusler alloy-based current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) device, we employ an atomistic model coupled with a spin accumulation model including the effect of a diffuse interface. The dynamics of magnetization is observed in the atomistic model and the calculation of magnetoresistance (MR) and MR ratio of the magnetic structure can be achieved by the spin accumulation model enabling us to investigate the spin transport behavior within the structure. The MR value can be directly calculated from the gradient of spin accumulation and spin current. The effect of injected current density is first investigated. It is found that increasing the current density results in a high MR ratio. Subsequently, to achieve a high performance reader, the number of coupled layers (N) is varied up to 16 to study its effect on the MR ratio. The calculated results indicate that increasing the number of layers N gives rise to the enhancement of the resistance change and MR ratio. At the critical point N = 5, further increasing N does not affect the MR ratio, which remains relatively unchanged. Interestingly, the MR ratio is doubled for N > 5 compared to N = 1. Our results demonstrate the possibility of enhancing the performance of multilayer CPP-GMR devices.

Large photoresistance and photoinduced magnetoresistance in La0.67Ca0.33MnO3 thin film on silicon substrate

Abstract The effects of light illumination and magnetic field on the electrical transport properties of La0.67Ca0.33MnO3 thin film on a silicon substrate have been studied in detail. Large value of colossal magnetoresistance has been observed under an applied magnetic field in the whole temperature range below 150 K which is related to the presence of both antiferromagnetic and ferromagnetic phase in the sample. A significant amount of resistance drop is caused by light illumination even at extremely low light intensities, ∼−22% with light of 0.3 μW cm−2 intensity and ∼−42% with 6.2 μW cm−2 intensity at 600 nm wavelength. There has been a notable rise in the photoinduced magnetoresistance value, specifically, a significant decrease in resistance occurs in simultaneous presence of magnetic field and light. For 1 T applied magnetic field, MR% rises from −33% in dark to −58% under light illumination at 150 K i.e. ΔMR% is 25%. As the strength of the magnetic field increases, ΔMR% decreases, suggesting that the magnetoresistive photoinduced phenomenon is more pronounced in the presence of mix phases in the sample. This combined enhanced magnetoresistive photoinduced phenomenon is explained by the interaction of photogenerated charge carriers in the sample and applied magnetic field.

Optimized TCR and MR properties of La0.7-xSmxCa0.3MnO3 ceramics by Sm3+ doping

La0.7Ca0.3MnO3 (LCMO), with its high temperature coefficient of resistance (TCR) and large magnetoresistance (MR) effect, has emerged as a leading material in the field of new multi-functional ceramics. Enhancing the magnetoresistive effect of LCMO in low magnetic field and expanding its application range is one of the main research goals of this kind of materials. In this work, La0.7-xSmxCa0.3MnO3 (LSCMO) (0 ≤ x ≤ 0.09) ceramic targets with different doping amounts were successfully prepared by sol-gel method, and the influence mechanism of Sm3+ doping on the magnetoresistive effect and electrical transport performance of LSCMO was systematically analyzed. X-ray diffraction (XRD) results showed that the lattice parameters (a,b,c,V) of LSCMO decreased slightly, indicating that the doping amount of Sm3+ at the A-site increased. Scanning electron microscopy (SEM) showed that the grains were closely connected without obvious pores, the grain size decreased slightly. The ρ-T curve shows an obvious metal-insulator (M − I) transition, with the increase of Sm3+, the increase of resistivity, metal-insulator transition temperature (TMI) and ferromagnetic-paramagnetic (FM-PM) transition temperature (TC) move towards low temperature. When x = 0.015, the peak value of TCR reaches 41.94 %·K−1, and when x = 0.06, the peak value of MR reaches 80.25 %, both TCR and MR are improved. The results show that: Sm3+ doping can effectively enhance the electromagnetic transport performance of LSCMO. This material has a very wide application prospect in the fields of magnetic storage, and infrared detection.

The thermal transport properties of Boron-doped C2N nanoribbons

In this paper, we focus on the thermal spin transport properties of hydrogen-saturated graphene-like nanoribbons substituted for doped nonmetallic B by using density functional theory combined with non-equilibrium Green's function approach. We find that AC2NNR-H(B) is a distinctly narrow bandgap semiconductor material and exhibits significant spin Seebeck effect, temperature switching effect, and giant magnetoresistance. Surprisingly, the spin Seebeck coefficients can reach 1.16 mV/K and the magnetoresistance value not only reaches 108% at low temperature, but also 104% near room temperature. These unique transport properties can be explained using spin-dependent transmission spectra combined with energy band structure. The current work further extends the theoretical study of graphene-like derivatives and provides new ideas for the construction of spintronic devices.

Isothermal magnetization and magnetoresistive variations in trilayer (La2/3Sr1/3MnO3/γ-Fe2O3/La2/3Sr1/3MnO3) hetero-structure

We report the magnetic field dependent magnetization and magnetoresistance (MR) properties of La2/3Sr1/3MnO3 (LSMO)/ γ -Fe2O3/LSMO trilayer heterostructure and single layer LSMO film grown on SiO2/Si (100) substrates utilizing Pulsed Laser Deposition technique. The metal- insulator-metal configuration is a magnetic tunnel junction topology, which is a parallel network of two metallic layers (LSMO) and one insulating layer ( γ -Fe2O3) in current-in-plane (CIP) geometry. The intrinsically inhomogeneous polycrystalline trilayer film shows much lower (almost half ) coercivity, compared to single layer LSMO film. The MR-H [MR = (ρ (H)-ρ (0))/ρ (0)] behavior of the films is studied under two regimes namely, Low Field Magnetoresistance (LFMR) and High Field Magnetoresistance (HFMR) at 5 K and 300 K in the field range of 0–7 T. Several equations were developed to simulate the experimental MR-H data of the studied samples. For both the films, in the LFMR region (0 T < H ≤ 1 T @ 5 K), the variation in MR exhibits a linear increase with H, followed by a logarithmic behavior in the HFMR region (1 T < H ≤ 7 T @ 5 K). For the trilayer film in CIP geometry, a negative MR of 16% is achieved at 5 K and 1 T field conditions, while LSMO single layer shows a negative MR of 13% at same temperature and field conditions. The MR obtained at high field (7 T) for both the films is quantitatively equal with a value of 38% @ 5 K and 15% @ 300 K. We obtained significantly better MR-H results for the trilayer in current-perpendicular-to-plane (CPP) configuration, where the two metallic layers and an insulating layer are in series. In the CPP configuration, MR is 21% @ 5 K and 1 T field, while it reached to 44% at 5 K and 7 T field. At room temperature, the trilayer heterostructure shows MR of 17% at 7 T field condition. At a higher field of 9 T, trilayer film in CPP mode exhibits MR value of 48% @ 5 K and 23% @ 300 K. Further, the anti-parallel and parallel magnetization states of the MIM device are well manifested in CIP and CPP geometries.

Effect of the glycerol dispersant on the structure, electrical transport and magnetoresistive properties of La0.67Ca0.33MnO3 ceramics prepared by the sol-gel routine

In this paper, the sol-gel technique is employed to synthesize polycrystalline La0.67Ca0.33MnO3 (LCMO) ceramics, where methanol is chosen as the solvent. The crystal structure, morphology, as well as electrical and magnetoresistive properties were examined. Moreover, the effect of amount of the dispersant glycerol on the properties of LCMO ceramics is studied. X-ray diffraction (XRD) results showed that all samples crystallized in single phases with orthogonal perovskite structure (pnma space group), without any detectable impurity phases. Results reveal that the grain size of LCMO ceramics exhibits an initial increase followed by a decrease, accompanied by a similar behavior in the temperature coefficient of resistance (TCR) and magnetoresistance (MR). When the volume ratio of glycerol and methanol reached 2 %, the grain size is determined to be 7.30 μm, with TCR value of 25.02 % K−1 at T= 263.2 K, and MR value recorded at 55.40 %. The study elucidates the influence of glycerol on LCMO polycrystalline ceramics and optimize the fabrication process, thereby improve the electric transport property and magnetoresistance.

Skyrmion-mediated nonvolatile ternary memory

Multistate memory systems have the ability to store and process more data in the same physical space as binary memory systems, making them a potential alternative to existing binary memory systems. In the past, it has been demonstrated that voltage-controlled magnetic anisotropy (VCMA) based writing is highly energy-efficient compared to other writing methods used in non-volatile nano-magnetic binary memory systems. In this study, we introduce a new, VCMA-based and skyrmion-mediated non-volatile ternary memory system using a perpendicular magnetic tunnel junction (p-MTJ) in the presence of room temperature thermal perturbation. We have also shown that ternary states {− 1, 0, + 1} can be implemented with three magnetoresistance values obtained from a p-MTJ corresponding to ferromagnetic up, down, and skyrmion state, with 99% switching probability in the presence of room temperature thermal noise in an energy-efficient way, requiring ~ 2 fJ energy on an average for each switching operation. Additionally, we show that our proposed ternary memory demonstrates an improvement in area and energy by at least 2X and ~ 104X respectively, compared to state-of-the-art spin-transfer torque (STT)-based non-volatile magnetic multistate memories. Furthermore, these three states can be potentially utilized for energy-efficient, high-density in-memory quantized deep neural network implementation.

Optimized TCR and MR of La0.67Ca0.33-xSrxMnO3: Ag0.15 ceramics by Sr doping

Herein, in order to successfully create high-density La0.67Ca0.33-xSrxMnO3: Ag0.15 (LCSMO: Ag) ceramics (0 ≤ x ≤ 0.05), this research combines sol-gel and solid-phase processes. LCSMO: Ag ceramics electrical transport and magnetic properties were thoroughly investigated. XRD verified that the high-purity orthorhombic perovskite structure (space group Pnma) was produced. As Sr doping rises, the grain size grows, the single electron bandwidth increases, the metal-insulator transition temperature (TMI) continues to climb, and temperature coefficient of resistance (TCR) and magnetoresistance (MR) steadily drop. When x = 0.04, the TMI reaches 302.2 K. At this time, the TCR peak (TCRpeak) reaches 24.0 %·K−1 and the MRpeak reaches 49.2 %. These results demonstrate that Sr may effectively raise the TMI of LCMO: Ag ceramics to room temperature while maintaining high TCR and MR Values, which benefits the material's potential applications in devices such as uncooled infrared detectors.

Optimization of electrical transport and magnetoresistance of La0.72Ca0.28-xPbxMnO3 ceramics by Pb2+ doping

Here, La0.72Ca0.28-xPbxMnO3 (LCPMO, 0 ≤ x ≤ 0.06) polycrystalline ceramics are prepared by the sol-gel method and the influence of Pb2+ doping on microstructure, chemical composition, and electrical transport properties of LCPMO ceramics is systematically investigated. The study was characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), Energy-Dispersive Spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS) and four-probe method. The four-probe test shows that all samples have MIT (metal-insulator transition) behavior, and the peak resistance gradually decreases with the increase of Pb2+ doping amount. With the increase of Pb2+ doping amount, the temperature coefficient of resistance (TCR) and magnetoresistance (MR) first increased and then decreased, the TCR increased from 24.6 % to 36.5 %·K−1, and the MR value increased from 47 % to 71.5 %, and both corresponded to high temperature direction. Referring to previous studies, higher TCR and MR values near room temperature are what researchers have been pursuing for a long time. it can be seen that the LCPMO ceramics prepared in this article can have good application prospects in infrared detection and magnetic storage.

Large tunneling magnetoresistance and its high bias stability in Weyl half-semimetal based lateral magnetic tunnel junctions

Magnetic tunnel junctions (MTJs) based on novel states of two-dimensional (2D) magnetic materials will significantly improve the value of the tunneling magnetoresistance (TMR) ratio. However, most 2D magnetic materials exhibit low critical temperatures, limiting their functionality to lower temperatures rather than room temperature. Moreover, most MTJs experience the decay of TMR ratio at large bias voltages within a low spin injection efficiency (SIE). Here, we construct a series of MTJs with Weyl half-semimetal (WHSM, e.g. MnSiS3, MnSiSe3, and MnGeSe3 monolayers) as the electrodes and investigate the spin-dependent transport properties in these kind of lateral heterojunctions by employing density functional theory combined with non-equilibrium Green’s function method. We find that an ultrahigh TMR (∼109%) can be obtained firmly at a small bias voltage and maintains a high SIE even at a large bias voltage, and MnSiSe3 monolayer is predicted to exhibit a high critical temperature. Additionally, we reveal that the same structure allows for the generation of fully spin-polarized photocurrent, irrespective of the polarization angle. These findings underscore the potential of WHSMs as candidate materials for high-performance spintronic devices.

A CrO₂ and Out-of-Plane Silicene based Sub-10nm MTJ with perfect spin filtering efficiency and high tunnel magnetoresistance

In this paper, properties of spin transport for MTJs (magnetic tunnel junction) consisting of CrO2 Half Metallic Ferromagnetic (HMF) electrodes with out of plane silicene sheet as scattering region are analyzed. The transport phenomena in the proposed structure are purely tunneling due to the absence of transmission states near the Fermi level. This is contrary to the in plane structures where transmission states exist near the Fermi level. The proposed device shows the highest value (100%) of magneto-resistance. Spin-filtering efficiency reported in out-of-plane silicene-based MTJ is also increased because of silicene acting as a perfect barrier, results in feeble spin down current in both parallel and anti-parallel configurations. The proposed device has dimensions below 10-nm. Due to the use of silicene sheet as a scattering region, it is also likely to integrate well with the already existing silicon technology. It can be used for high-performance memory applications similar to MRAMs.

Thermally stable Peltier controlled vacuum chamber for electrical transport measurements.

The design, manufacture, and characterization of an inexpensive, temperature-controlled vacuum chamber with millikelvin stability for electrical transport measurements at and near room temperature is reported. A commercially available Peltier device and a high-precision temperature controller are used to actively heat and cool the sample space. The system was designed to minimize thermal fluctuations in spintronic and semiconductor transport measurements, but the general principle is relevant to a wide range of electrical measurement applications. The main issues overcome are the mounting of a sample with a path of high thermal conductivity through to the Peltier device and the heat sinking of the said Peltier device inside a vacuum. A copper slug is used as the mount for a sample, and a large copper block is used as a thermal feedthrough before a passive heat sink is used to cool this block. The Peltier device provides 20W of heating and cooling power, achieving a maximum range of 30K below and 40K above the ambient temperature. The temperature stability is within 5 mK at all set points with an even better performance above the ambient temperature. A vacuum pressure of 10-8 hPa is achievable. As a demonstration, we present experimental results from current-induced electrical switching of a CuMnAs thin film. Transport measurements with and without the Peltier control emphasize the importance of a constant temperature in these applications. The thermal lag between the sample space measurement and the sample itself is observed through magnetoresistance values measured during a temperature sweep.

Spin-related negative magnetoresistance in germanium films

Herein, we report the transport properties of Ge films. The variable-range hopping transport at low temperatures (T≲50K) and thermal activation transport at high temperatures (T≳50K) are observed in our Ge films. In the different temperature regimes, the anomalous magnetotransport properties are observed. In the low-temperature regime (T≲15K), the negative magnetoresistance (MR) at low field and positive MR at high field can be seen. In the moderate-temperature regime (15K≲T≲100K), the positive MR curve gradually evolves from a linear curve to a parabolic curve with increasing temperature, and the MR magnitude appears to be insensitive to temperature. In the high-temperature regime (T≳100K), the positive MR value increases with increasing temperature. By considering the angular-dependent MR, we can determine that the negative MR comes from the spin-related mechanism, and the positive MR is caused by the orbital-related mechanism. However, further study is required to determine the exact mechanisms behind the anomalous magnetotransport properties.

Magnetoresistance properties in nickel-catalyzed, air-stable, uniform, and transfer-free graphene

A transfer-free graphene with high magnetoresistance (MR) and air stability has been synthesized using nickel-catalyzed atmospheric pressure chemical vapor deposition. The Raman spectrum and Raman mapping reveal the monolayer structure of the transfer-free graphene, which has low defect density, high uniformity, and high coverage (>90%). The temperature-dependent (from 5 to 300 K) current–voltage (I–V) and resistance measurements are performed, showing the semiconductor properties of the transfer-free graphene. Moreover, the MR of the transfer-free graphene has been measured over a wide temperature range (5–300 K) under a magnetic field of 0 to 1 T. As a result of the Lorentz force dominating above 30 K, the transfer-free graphene exhibits positive MR values, reaching ∼8.7% at 300 K under a magnetic field (1 Tesla). On the other hand, MR values are negative below 30 K due to the predominance of the weak localization effect. Furthermore, the temperature-dependent MR values of transfer-free graphene are almost identical with and without a vacuum annealing process, indicating that there are low density of defects and impurities after graphene fabrication processes so as to apply in air-stable sensor applications. This study opens avenues to develop 2D nanomaterial-based sensors for commercial applications in future devices.

Sputtering pressure dependence of microstructure and magnetoresistance properties of non-uniform Co–ZnO nanocomposite film

Co-ZnO metal–semiconductor nanocomposite films have become the focus of attention in recent years since their magnetoresistance (MR) effect at room temperature (RT). In this study, non-uniform Co-ZnO nanocomposite films were prepared by magnetron co-sputtering method. With sputtering pressure increasing, the formation of ferromagnetic Co clusters is suppressed effectively, and the metallic-state superparamagnetic Co particles are dispersed, which form the tunneling transport paths in the Co-ZnO films at high Co content. As the sputtering pressure increases from 0.3 Pa to 1.2 Pa, the RT -MR value of the films increases from 0.41 % to 11.85 %, and the saturation magnetization of the films rises from 6.3 kGs to 7.3 kGs and then decreases to 6.7 kGs. It is noteworthy that the low-field MR field sensitivity at 1000 Oe is enhanced by about 10 times from 0.5 Pa to 1.2 Pa. This provides a reference for the application of low-magnetic field detectors.

Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions

A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to characteristics such as its high storage capacity and high thermal stability. The perpendicular shape anisotropy (PSA) of the pillar enables its magnetization direction to be stabilized. A pillar with a high aspect ratio exhibits both strong PSA and magnetization with high thermal stability. Reversing the magnetization direction of such a pillar using the current flowing through it is a significant challenge in spintronics. However, spin injection from another FM layer alone cannot reverse the magnetization of pillars of which the length exceeds 100 nm. This motivated us to propose a magnetic junction (MJ) consisting of a high-aspect-ratio FM nanopillar with two thin FM layers. Using micromagnetic simulation, we demonstrate the magnetization reversal of a 150 nm-long pillar with a diameter of 15 nm. The simulation revealed that the magnetization of the pillar reverses because of the spin transfer torque induced by the spin injection from the two thin FM layers and the spin-polarized current (SPC) flowing in the pillar in the longitudinal direction. During the magnetization reversal process, a domain wall (DW) first forms at one end of the pillar due to the spin injection. Then, driven by the SPC, the DW moves to the other end of the pillar, and the magnetization is reversed. The magnetization direction of the pillar, controlled by changing the direction of the current flowing through the pillar, can be evaluated from the respective magnetoresistance values of the two MJs. Alternatively, by pinning the DW in the pillar, a three-value magnetic memory can be developed. In addition, multi-bit and analog memories can be developed by controlling the pinning position of the DW. The high-aspect-ratio pillar-writing scheme is foreseen to pave the way for the practical development of next-generation spintronic devices.

Investigation of thermoelectric and magnetotransport properties of single crystalline Bi2Se3 topological insulator

The realization of remarkable thermoelectric (TE) properties in a novel single-crystalline quantum material is a topic of prime interest in the field of thermoelectricity. It necessitates a proper understanding of transport properties under magnetic field and magnetic properties at low field. We report polarized Raman spectroscopic study, TE properties, and magneto-resistance (MR) along with magnetic characterization of single-crystalline Bi2Se3. Polarized Raman spectrum confirms the strong polarization effect of A1g1 and A1g2 phonon modes, which verifies the anisotropic nature of the Bi2Se3 single crystal. Magnetization measurement along the in-plane direction of single crystal divulges a cusp-like paramagnetic response in susceptibility plot, indicating the presence of topological surface states (TSSs) in the material. In-depth MR studies performed in different configurations also confirm the presence of anisotropy in the single-crystalline Bi2Se3 sample. A sharp rise in MR value near zero magnetic field and low-temperature regime manifests a weak anti-localization (WAL) effect, depicting the quantum origin of the conductivity behavior at low temperature. Moreover, in-plane magneto-conductivity data at low-temperature (up to 5 K) and low-field region (≤15 kOe) confirm the dominance of the WAL effect (due to TSS) with a negligible bulk contribution. Quantum oscillation (SdH) in magneto-transport data also exhibits the signature of TSS. Additionally, an exceptional TE power factor of ∼950 μW m−1 K−2 at 300 K is achieved, which is one of the highest values reported for pristine Bi2Se3. Our findings pave the way for designing single crystals, which give dual advantages of being a good TE material along with a topological insulator bearing potential application.

Magnetoresistance (MR) properties of magnetic materials.

In this review, the classification of magnetic materials exhibiting magnetoresistive properties is the focus of discussion because each material possesses different magnetic and electrical properties that influence the resulting magnetoresistance (MR) values. These properties depend on the structure and mechanism of the material. In this overview, the classification of magnetic materials with different structures is examined in several material groups, including the following: (1) perovskite structure (ABO3), (2) alloy, (3) spinel structure, and (4) Kagome magnet. This review summarizes the results of each material's properties based on experimental findings, and serves as a reference for studying the characteristics of each material.

Enhanced magnetoresistance properties of K-site deficient La0.85K0.1□0.05MnO3 manganites synthesized via sol-gel, wet-mixing, and solid-state reaction methods.

The effect of synthesis methods on the structural, magnetic, electrical transport, and magnetoresistance (MR) properties of K-deficient La0.85K0.1□0.05MnO3 (LKdMO) materials has been investigated. The compounds were synthesized via sol-gel (SG), wet-mixing (WM), and solid-state (SS) reaction. The resulting ceramics were characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray photoelectron spectroscopy (XPS), and four point probe (FPP) techniques to evaluate their crystal structure, morphologies, elemental composition, electrical transport properties, and magnetoresistance (MR) behavior. This study reveals that the electrical- and magneto-transport properties of LKdMO ceramics are strongly influenced by their synthesis method. Among the samples, the WM method yielded ceramics with smaller grain sizes and more dispersed grain boundaries, leading to reduced resistivity. The MR values for LKdMO ceramics synthesized through SG, WM, and SS reached 17.05% at 287.74 K, 54.68% at 271.50 K, and 47.09% at 270.25 K, respectively. The WM-synthesized sample exhibited superior crystal quality and enhanced magnetic and electrical properties. These results indicate that LKdMO ceramics are promising candidates for application in magnetic sensors.

Structural, dielectric, magnetic, optical, and electrical properties of double‐perovskite Sr1.5Mn0.5Fe0.5Hf1.5O6 oxides

AbstractHalf‐metallic ferromagnets (HMFs) exhibit semiconductor behavior for one spin projection and metal characteristics for the other, which have promising applications in spintronics. It is a great challengeable for HMFs to have wide spin energy gap, large saturation magnetization (MS), and high Curie temperature (TC) simultaneously. Here, we report the Sr1.5Mn0.5Fe0.5Hf1.5O6 (SMFHO) double perovskite compounds synthesized by solid‐state reaction and display a magnetic TC up to 804 K due to the strong Mn3+(↑)Fe3+(↑) spin interactions, which is the reported record in perovskite‐type HMFs so far. The measured MS value at 300 K was 4.87 μB/f.u., and it further increased up to 6.09 μB/f.u. at 2 K. The SMFHO powders exhibited butterfly‐shaped magnetoresistance (MR)–H curve at 2 K, and the MR (2 K, 7 T) value was measured as −3.86% due to the intergranular magnetic tunneling effect. Variation of the resistivity of the SMFHO ceramics versus temperature exhibits a semiconductor behavior, and the electrical transport properties of the SMFHO ceramics are well studied by Mott's range jump model, thermally activated semiconductor conductance model and small polaron jumping model, respectively. The optical absorption spectrum of the SMFHO powders demonstrates an indirect optical bandgap of 3.56 eV. Our present work demonstrates the intriguing properties of the SMFHO oxides where high TC, wide energy gap, and large MS value are preserved at the same time, which open the way to their promising applications in advanced spintronic devices at or beyond room temperature.