Magnetization reversal via domain wall motion in vertical high-aspect-ratio nanopillar with two magnetic junctions

Abstract

A vertical ferromagnetic (FM) nanopillar can be used as magnetic memory owing to characteristics such as its high storage capacity and high thermal stability. The perpendicular shape anisotropy (PSA) of the pillar enables its magnetization direction to be stabilized. A pillar with a high aspect ratio exhibits both strong PSA and magnetization with high thermal stability. Reversing the magnetization direction of such a pillar using the current flowing through it is a significant challenge in spintronics. However, spin injection from another FM layer alone cannot reverse the magnetization of pillars of which the length exceeds 100 nm. This motivated us to propose a magnetic junction (MJ) consisting of a high-aspect-ratio FM nanopillar with two thin FM layers. Using micromagnetic simulation, we demonstrate the magnetization reversal of a 150 nm-long pillar with a diameter of 15 nm. The simulation revealed that the magnetization of the pillar reverses because of the spin transfer torque induced by the spin injection from the two thin FM layers and the spin-polarized current (SPC) flowing in the pillar in the longitudinal direction. During the magnetization reversal process, a domain wall (DW) first forms at one end of the pillar due to the spin injection. Then, driven by the SPC, the DW moves to the other end of the pillar, and the magnetization is reversed. The magnetization direction of the pillar, controlled by changing the direction of the current flowing through the pillar, can be evaluated from the respective magnetoresistance values of the two MJs. Alternatively, by pinning the DW in the pillar, a three-value magnetic memory can be developed. In addition, multi-bit and analog memories can be developed by controlling the pinning position of the DW. The high-aspect-ratio pillar-writing scheme is foreseen to pave the way for the practical development of next-generation spintronic devices.