Year-end Sale % OFF 
Abstract
In this paper, properties of spin transport for MTJs (magnetic tunnel junction) consisting of CrO2 Half Metallic Ferromagnetic (HMF) electrodes with out of plane silicene sheet as scattering region are analyzed. The transport phenomena in the proposed structure are purely tunneling due to the absence of transmission states near the Fermi level. This is contrary to the in plane structures where transmission states exist near the Fermi level. The proposed device shows the highest value (100%) of magneto-resistance. Spin-filtering efficiency reported in out-of-plane silicene-based MTJ is also increased because of silicene acting as a perfect barrier, results in feeble spin down current in both parallel and anti-parallel configurations. The proposed device has dimensions below 10-nm. Due to the use of silicene sheet as a scattering region, it is also likely to integrate well with the already existing silicon technology. It can be used for high-performance memory applications similar to MRAMs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
