Low-temperature Transport Measurements Research Articles

Electrical Transport Properties of PbS Quantum Dot/Graphene Heterostructures.

The integration of PbS quantum dots (QDs) with graphene represents a notable advancement in enhancing the optoelectronic properties of quantum-dot-based devices. This study investigated the electrical transport properties of PbS quantum dot (QD)/graphene heterostructures, leveraging the high carrier mobility of graphene. We fabricated QD/graphene/SiO2/Si heterostructures by synthesizing p-type monolayer graphene via chemical vapor deposition and spin-coating PbS QDs on the surface. Then, we used a low-temperature electrical transport measurement system to study the electrical transport properties of the heterostructure under different temperature, gate voltage, and light conditions and compared them with bare graphene samples. The results indicated that the QD/graphene samples exhibited higher resistance than graphene alone, with both resistances slightly increasing with temperature. The QD/graphene samples exhibited significant hole doping, with conductivity increasing from 0.0002 Ω-1 to 0.0007 Ω-1 under gate voltage modulation. As the temperature increased from 5 K to 300 K, hole mobility decreased from 1200 cm2V-1s-1 to 400 cm2V-1s-1 and electron mobility decreased from 800 cm2V-1s-1 to 200 cm2V-1s-1. Infrared illumination reduced resistance, thereby enhancing conductivity, with a resistance change of about 0.4%/mW at a gate voltage of 125 V, demonstrating the potential of these heterostructures for infrared photodetector applications. These findings offer significant insights into the charge transport mechanisms in low-dimensional materials, paving the way for high-performance optoelectronic devices.

Unusual Janus Bi2TeSe2 Topological Insulators Displaying Second-Harmonic Generation, Linear-in-Temperature Resistivity, and Weak Antilocalization.

Well-established knowledge about inversion-symmetric Bi2TexSe3-x topological insulators characterizes the promising new-generation quantum device. Noticeably, the inversion asymmetric phase containing different surface electronic structures may create an extra topological phenomenon pointing to a new device paradigm. Herein, Janus Bi2TeSe2 single-crystal nanosheets with an unconventional stacking sequence of Se-Bi-Se-Bi-Te are realized via chemical vapor deposition growth, which is clarified by atomically resolved AC-STEM and elemental mapping. An obvious polarization-dependent second-harmonic generation with a representative 6-fold rotational symmetry is detected due to the broken out-of-plane mirror symmetry in this system. Low-temperature transport measurements display a strange metal-like linear-in-temperature resistivity. Anomalous conductance peaks under low magnetic fields induced by the weak antilocalization effect of topological surface states and the two-dimensional transport-dominated anisotropic magnetoresistance are revealed. These findings correlate the Janus Bi2TeSe2 phase with emerging physics topics, which would inspire fresh thoughts in well-developed Bi3TexSe3-x topological insulators and open up opportunities for exploring hybrid nonlinear optoelectronic topological devices.

Inducing a tunable skyrmion-antiskyrmion system through ion beam modification of FeGe films

Skyrmions and antiskyrmions are nanoscale swirling textures of magnetic moments formed by chiral interactions between atomic spins in magnetic noncentrosymmetric materials and multilayer films with broken inversion symmetry. These quasiparticles are of interest for use as information carriers in next-generation, low-energy spintronic applications. To develop skyrmion-based memory and logic, we must understand skyrmion-defect interactions with two main goals—determining how skyrmions navigate intrinsic material defects and determining how to engineer disorder for optimal device operation. Here, we introduce a tunable means of creating a skyrmion-antiskyrmion system by engineering the disorder landscape in FeGe using ion irradiation. Specifically, we irradiate epitaxial B20-phase FeGe films with 2.8 MeV Au4+ ions at varying fluences, inducing amorphous regions within the crystalline matrix. Using low-temperature electrical transport and magnetization measurements, we observe a strong topological Hall effect with a double-peak feature that serves as a signature of skyrmions and antiskyrmions. These results are a step towards the development of information storage devices that use skyrmions and antiskyrmions as storage bits, and our system may serve as a testbed for theoretically predicted phenomena in skyrmion-antiskyrmion crystals.

Compact computer controlled biaxial tensile device for low-temperature transport measurements of layered materials.

A biaxial tensile device for the transport study of layered materials is described. The device is mounted on the standard 24 pin zero force connector and can be moved between various setups. The compact design of the device makes it suitable for a wide range of studies. In our case, it is placed inside a 50mm diameter chamber in the cryocooler and is used in the temperature range 9-310K. A sample is glued in the center of a polyimide cruciform substrate, the ends of which are connected to a tension system driven by four computer-controlled stepper motors providing tensile force up to 30 N. Computer simulation results and their experimental verification show that tensile strain along one axis depends on the tensile load along the perpendicular direction, and this dependence turns out to be relatively strong and exceeds 40%. The operation of the device is demonstrated by studying the effect of deformation on the electrical conductivity of the layered compound 2H-NbS2.

Tunable magnetic confinement effect in a magnetic superlattice of graphene

Two-dimensional van der Waals materials such as graphene present an opportunity for band structure engineering using custom superlattice potentials. In this study, we demonstrate how self-assemblies of magnetic iron-oxide (Fe3O4) nanospheres stacked on monolayer graphene generate a proximity-induced magnetic superlattice in graphene and modify its band structure. Interactions between the nanospheres and the graphene layer generate superlattice Dirac points in addition to a gapped energy spectrum near the K and K′ valleys, resulting in magnetic confinement of quasiparticles around the nanospheres. This is evidenced by gate-dependent resistance oscillations, observed in our low temperature transport measurements, and confirmed by self-consistent tight binding calculations. Furthermore, we show that an external magnetic field can tune the magnetic superlattice potential created by the nanospheres, and thus the transport characteristics of the system. This technique for magnetic-field-tuned band structure engineering using magnetic nanostructures can be extended to a broader class of 2D van der Waals and topological materials.

Diffusive and ballistic transport in thin InSb nanowire devices using a few-layer-graphene-AlO x gate

Quantum devices based on InSb nanowires (NWs) are a prime candidate system for realizing and exploring topologically-protected quantum states and for electrically-controlled spin-based qubits. The influence of disorder on achieving reliable quantum transport regimes has been studied theoretically, highlighting the importance of optimizing both growth and nanofabrication. In this work, we consider both aspects. We developed InSb NW with thin diameters, as well as a novel gating approach, involving few-layer graphene and atomic layer deposition-grown AlO x . Low-temperature electronic transport measurements of these devices reveal conductance plateaus and Fabry–Pérot interference, evidencing phase-coherent transport in the regime of few quantum modes. The approaches developed in this work could help mitigate the role of material and fabrication-induced disorder in semiconductor-based quantum devices.

Modulation of the optical and transport properties of epitaxial SrNbO3 thin films by defect engineering

The discovery of strontium niobate (SNO) as a potentially new transparent electrode has generated much interest due to its implications in various optoelectronic devices. Pristine SNO exhibits exceptionally low resistivity (∼10−4 Ω cm) at room temperature. However, this low resistivity occurs due to large number of carrier concentration in the system, which significantly affects its optical transparency (∼40%) in the visible range and hinders its practical applications as a transparent electrode. Here, we show that modulating the growth kinetics via oxygen manipulation is a feasible approach to achieve the desired optoelectronic properties. In particular, epitaxial (001) SNO thin films are grown on (001) lanthanum aluminate by pulsed laser deposition at different oxygen partial pressures and are shown to improve the optical transparency from 40% to 72% (λ = 550 nm) at a marginal cost of electrical resistivity from 2.8 to 8.1 × 10−4 Ω cm. These changes are directly linked with the multi-valence Nb-states, as evidenced by x-ray photoelectron spectroscopy. Furthermore, the defect-engineered SNO films exhibit multiple electronic phases that include pure metallic, coexisting metal-semiconducting-like, and pure semiconducting-like phases as evidenced by low-temperature electrical transport measurements. The intriguing metal-semiconducting coexisting phase is thoroughly analyzed using both perpendicular and angle-dependent magnetoresistance measurements, further supported by a density functional theory-based first-principles study and the observed feature is explained by the quantum correction to the conductivity. Overall, this study shows an exciting avenue for altering the optical and transport properties of SNO epitaxial thin films for their practical use as a next-generation transparent electrode.

Tuning magnetoresistance of chromium chloride tunnel junction through the interface and multi-field effect

<sec>Magnetic tunnel junctions (MTJs) serve as essential platforms for investigating spin transport properties, magnetic phase transitions, and anisotropy in magnetic materials. Recently two-dimensional van der Waals antiferromagnetic insulators like chromium chloride (CrCl<sub>3</sub>) or chromium iodide (CrI<sub>3</sub>) have been used to develop spin-filtering magnetic tunnel junctions (sf-MTJs), improving the device performance for material property exploration and spintronic applications. However, it is crucial to recognize that the spin-filtering effect is not the sole determining factor of tunneling magnetoresistance (TMR) in these junctions; the interface magnetic exchange interactions and adjustable electrode density of states (DOS) fluctuations, response to applied electric or magnetic fields, can also influence the tunneling current.</sec><sec>In this study, we fabricate MTJ devices by using mechanically-exfoliated few-layer CrCl<sub>3</sub> as the tunnel barrier and few-layer graphene (FLG) as electrodes through dry transfer technique. Conducting low-temperature quantum transport measurements, we observe unconventional TMR behaviors, including bias-voltage-dependent TMR, oscillatory tunneling current under high magnetic fields, and tunable tunneling current via gate voltage.</sec><sec>A qualitative model of elastic tunneling current is employed to analyze the spin and band characteristics of the MTJ device. The observed bias-voltage-dependent TMR is attributed to the changes in the tunneling mechanism due to magnetic proximity effect, which induces magnetization in the FLG electrode near the FLG/CrCl<sub>3</sub> interface. The antiparallel alignment of polarized spin to CrCl<sub>3</sub>’s magnetization results in injected charge carriers facing a higher tunnel barrier, leading to negative TMR at lower bias voltages. As the bias voltage increases, the magnetic proximity effect lessens, and the device reverts to its conventional spin-filtering functionality. The oscillatory tunneling current is explained by the graphene electrode’s quantum oscillatory density of states behavior under vertical magnetic fields, which can be controlled by the applied gate voltage.</sec><sec>This study contributes to the understanding of previously unexplored TMR phenomena in two-dimensional MTJs, deepening our insights into carrier transport properties in these heterostructures and broadening avenues for investigating the physical properties of two-dimensional magnetic materials and their spintronic applications.</sec>

Diffusion mediated growth of superconducting Nb-Ti composite films by high temperature annealing

The fabrication of superconducting Nb-Ti alloy by high temperature annealing of Nb/Ti bilayer thin films is reported here. During the annealing process, Nb and Ti diffuse into each other and Nb-Ti composite film formation occurs at the interface of the bilayer. Two types of substrates, namely, SiO2/Si and Si3N4/Si are used to grow the bilayers of Nb/Ti by using dc magnetron sputtering. Annealing at temperature about 820 °C leads the substrates to take part into the diffusion process. The alloying of Nb-Ti and the effect of substrates on the structural properties are studied by x-ray diffraction (XRD) and x-ray photoelectron spectroscopy (XPS). Ti-rich Nb-Ti phases are present in the XRD while interface studies through XPS confirms the interdiffusion of the two elements Nb and Ti along with the presence of the decomposed elements from the substrates. Appearance of nitride phases in case of Si3N4/Si substrate confirms the substrate’s involvement in the diffusion process. Further low temperature transport measurements are carried out to study the superconducting properties of the Nb-Ti composite films grown on both oxide (SiO2/Si) and nitride (Si3N4/Si) substrates. Nb-Ti composite films offer higher transition temperature (T C ) compared to that of pure Nb with similar thickness used in Nb/Ti bilayer films. Higher normal state resistance (R N ) with wider transition width for Nb-Ti on nitride substrate in comparison with the oxide substrate indicates a possible role of N atoms in tuning the disorder and hence controlling the transport properties. Finally, the presented method can be used to fabricate superconducting stoichiometric NbTi and NbTiN thin films for future phase slip and superconducting single photon detector-based applications.

Stabilizing the Inverted Phase of a WSe2/BLG/WSe2 Heterostructure via Hydrostatic Pressure.

Bilayer graphene (BLG) was recently shown to host a band-inverted phase with unconventional topology emerging from the Ising-type spin-orbit interaction (SOI) induced by the proximity of transition metal dichalcogenides with large intrinsic SOI. Here, we report the stabilization of this band-inverted phase in BLG symmetrically encapsulated in tungsten diselenide (WSe2) via hydrostatic pressure. Our observations from low temperature transport measurements are consistent with a single particle model with induced Ising SOI of opposite sign on the two graphene layers. To confirm the strengthening of the inverted phase, we present thermal activation measurements and show that the SOI-induced band gap increases by more than 100% due to the applied pressure. Finally, the investigation of Landau level spectra reveals the dependence of the level-crossings on the applied magnetic field, which further confirms the enhancement of SOI with pressure.

Supercurrent, Multiple Andreev Reflections and Shapiro Steps in InAs Nanosheet Josephson Junctions.

We report an experimental study of proximity induced superconductivity in planar Josephson junction devices made from free-standing InAs nanosheets. The nanosheets are grown by molecular beam epitaxy, and the Josephson junction devices are fabricated by directly contacting the nanosheets with superconductor Al electrodes. The fabricated devices are explored by low-temperature carrier transport measurements. The measurements show that the devices exhibit a gate-tunable supercurrent, multiple Andreev reflections, and a good quality superconductor-semiconductor interface. The superconducting characteristics of the Josephson junctions are investigated at different magnetic fields and temperatures and are analyzed based on the Bardeen-Cooper-Schrieffer (BCS) theory. The measurements of the ac Josephson effect are also conducted under microwave radiations with different radiation powers and frequencies, and integer Shapiro steps are observed. Our work demonstrates that InAs nanosheet based hybrid devices are desired systems for investigating the forefront of physics, such as two-dimensional topological superconductivity.

Anomalous electronic transport in high-mobility Corbino rings

We report low-temperature electronic transport measurements performed in two multi-terminal Corbino samples formed in GaAs/Al-GaAs two-dimensional electron gases (2DEG) with both ultra-high electron mobility ( ≳ 20 × 106 cm2/ Vs) and with distinct electron density of 1.7 and 3.6 × 1011 cm−2. In both Corbino samples, a non-monotonic behavior is observed in the temperature dependence of the resistance below 1 K. Surprisingly, a sharp decrease in resistance is observed with increasing temperature in the sample with lower electron density, whereas an opposite behavior is observed in the sample with higher density. To investigate further, transport measurements were performed in large van der Pauw samples having identical heterostructures, and as expected they exhibit resistivity that is monotonic with temperature. Finally, we discuss the results in terms of various lengthscales leading to ballistic and hydrodynamic electronic transport, as well as a possible Gurzhi effect.

Continuous intercalation compound fibers of bromine wires and aligned CNTs for high-performance conductors

This work presents macroscopic fibers of aligned double-walled carbon nanotubes (DWCNTs) intercalated with long-range ordered bromine, with a stoichiometry close to C17Br. Tribromide ions lie inside interstitial sites between hexagonally-packed DWCNTs and extend parallel to their axis as ordered supramolecular “wires”. First-principles simulations confirm this structure and a transfer of 0.13 electrons per Br atom. The structure of nested bundles of CNTs with a homogeneous distribution of bromine species in the interstitial sites of the superlattice is directly imaged by cross-sectional HRTEM, showing full intercalation of highly dense and aligned fibers. The presence of Br2 and Br3– is confirmed by Raman spectroscopy, and their supramolecular organization is resolved by 2D wide-angle X-ray scattering. Intercalation increases room-temperature longitudinal electrical conductivity by a factor of 8.4. Through low-temperature transport measurements in the longitudinal and transverse directions, we show that the intercalate reduces the tunneling-dominated resistance associated with transport between adjacent CNTs, rather than exclusively acting as a dopant that increases conductance of individual CNTs. By preserving the separation between CNTs, the exceptional mechanical properties of the CNT fiber host are retained. The combined tensile strength above 2.46 GPa and conductivity of 10.68 MS/m makes intercalated CNT fibers attractive lightweight conductors with combined properties superior to metals and graphite intercalation compounds.

Josephson Effect in NbS2 van der Waals Junctions.

van der Waals (vdW) Josephson junctions can possibly accelerate the development of an advanced superconducting device that utilizes the unique properties of two-dimensional (2D) transition metal dichalcogenide (TMD) superconductors such as spin-orbit coupling and spin-valley locking. Here, we fabricate vertically stacked NbS2/NbS2 Josephson junctions using a modified all-dry transfer technique and characterize the device performance via systematic low-temperature transport measurements. The experimental results show that the superconducting transition temperature of the NbS2/NbS2 Josephson junction is 5.84 K, and the critical current density reaches 3975 A/cm2 at 2 K. Moreover, we extract a superconducting energy gap Δ = 0.58 meV, which is considerably smaller than that expected from the single band s-wave Bardeen-Cooper-Schrieffer (BCS) model (Δ = 0.89 meV).

Phase transformation from FeSe to Fe3Se4

We report on thermal atomic layer deposition of iron selenide (FeSe and Fe3Se4) thin films with four-inch wafer-scale uniformity using two precursors of iron bis(N, N′-diisopropylacetamidinato) [Fe(i-Pr-Me-AMD)2] and bis(triethysilyl) selenide [(Et3Si)2Se]. The temperature window is determined to be 350–400 °C. The transformation from tetragonal FeSe to monoclinic Fe3Se4 has been found. The tetragonal FeSe thin films exhibit a strong (00 l) texture deposited on amorphous silica glass, suggesting that the surface is partially parallel to the layered ab plane. By adjusting the ratio of iron and selenium, the thin films exhibit from conductors to semiconductors, and finally to insulators. All as-grown conductive samples appear metallic-like temperature dependence by low-temperature electrical transport measurements. This study opens the way to prepare various metal selenides by atomic layer deposition.

Homogeneous Lateral Lithium Intercalation into Transition Metal Dichalcogenides via Ion Backgating.

Lithium intercalation has become a versatile tool for realizing emergent quantum phenomena in two-dimensional (2D) materials. However, the insertion of lithium ions may be accompanied by the creation of wrinkles and cracks, which prevents the material from manifesting its intrinsic properties under substantial charge injection. By using the recently developed ion backgating technique, we successfully realize lateral intercalation in 1T-TiSe2 and 2H-NbSe2, which shows substantially improved sample homogeneity. The homogeneity at high lithium doping is not only demonstrated via low-temperature transport measurements but also directly visualized by topographical imaging through in situ atomic force microscopy (AFM). The application of lateral intercalation to a broad spectrum of 2D materials can greatly facilitate the search for exotic quantum phenomena.

Single and double In atomic layers grown on top of a single atomic NiSi2 layer on Si(111)

Atomic sandwiches consisting of In layers with coverages ranging from $\ensuremath{\sim}0.5$ to $\ensuremath{\sim}2.5$ monolayers atop a single-atomic-layer ${\mathrm{NiSi}}_{2}$ have been grown on Si(111) and have been explored using a set of experimental techniques, i.e., scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, and in situ low-temperature transport measurements, accompanied by the density functional theory calculations. It has been found that each of the three In phases forming on the ${\mathrm{NiSi}}_{2}/\mathrm{Si}(111)$ substrate has its definite counterpart among the In phases forming on the bare Si(111) surface. Structural, electronic, and transport properties of the single- and double-atomic In layers have been elucidated in detail.

Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies

Two-dimensional (2D) transition metal chalcogenides (TMCs) are promising for nanoelectronics and energy applications. Among them, the emerging non-layered TMCs are unique due to their unsaturated dangling bonds on the surface and strong intralayer and interlayer bonding. However, the synthesis of non-layered 2D TMCs is challenging and this has made it difficult to study their structures and properties at thin thickness limit. Here, we develop a universal dual-metal precursors method to grow non-layered TMCs in which a mixture of a metal and its chloride serves as the metal source. Taking hexagonal Fe1–xS as an example, the thickness of the Fe1–xS flakes is down to 3 nm with a lateral size of over 100 μm. Importantly, we find ordered cation Fe vacancies in Fe1–xS, which is distinct from layered TMCs like MoS2 where anion vacancies are commonly observed. Low-temperature transport measurements and theoretical calculations show that 2D Fe1–xS is a stable semiconductor with a narrow bandgap of ∼60 meV. In addition to Fe1–xS, the method is universal in growing various non-layered 2D TMCs containing ordered cation vacancies, including Fe1–xSe, Co1–xS, Cr1–xS, and V1–xS. This work paves the way to grow and exploit properties of non-layered materials at 2D thickness limit.

Coherent Hole Transport in Selective Area Grown Ge Nanowire Networks.

Holes in germanium nanowires have emerged as a realistic platform for quantum computing based on spin qubit logic. On top of the large spin–orbit coupling that allows fast qubit operation, nanowire geometry and orientation can be tuned to cancel out charge noise and hyperfine interaction. Here, we demonstrate a scalable approach to synthesize and organize Ge nanowires on silicon (100)-oriented substrates. Germanium nanowire networks are obtained by selectively growing on nanopatterned slits in a metalorganic vapor phase epitaxy system. Low-temperature electronic transport measurements are performed on nanowire Hall bar devices revealing high hole doping of ∼1018 cm–3 and mean free path of ∼10 nm. Quantum diffusive transport phenomena, universal conductance fluctuations, and weak antilocalization are revealed through magneto transport measurements yielding a coherence and a spin–orbit length of the order of 100 and 10 nm, respectively.

Biomolecular control over local gating in bilayer graphene induced by ferritin

SummaryElectrical field-induced charge modulation in graphene-based devices at the nanoscale with ultrahigh density carrier accumulation is important for various practical applications. In bilayer graphene (BLG), inversion symmetry can simply be broken by an external electric field. However, control over charge carrier density at the nanometer scale is a challenging task. We demonstrate local gating of BLG in the nanometer range by adsorption of AfFtnAA (which is a bioengineered ferritin, an iron-storing globular protein with ∅ = 12 nm). Low-temperature electrical transport measurements with field-effect transistors with these AfFtnAA/BLG surfaces show hysteresis with two Dirac peaks. One peak at a gate voltage VBG = 35 V is associated with pristine BLG, while the second peak at VBG = 5 V results from local doping by ferritin. This charge trapping at the biomolecular length scale offers a straightforward and non-destructive method to alter the local electronic structure of BLG.