Single and double In atomic layers grown on top of a single atomic NiSi2 layer on Si(111)

Abstract

Atomic sandwiches consisting of In layers with coverages ranging from $\ensuremath{\sim}0.5$ to $\ensuremath{\sim}2.5$ monolayers atop a single-atomic-layer ${\mathrm{NiSi}}_{2}$ have been grown on Si(111) and have been explored using a set of experimental techniques, i.e., scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, and in situ low-temperature transport measurements, accompanied by the density functional theory calculations. It has been found that each of the three In phases forming on the ${\mathrm{NiSi}}_{2}/\mathrm{Si}(111)$ substrate has its definite counterpart among the In phases forming on the bare Si(111) surface. Structural, electronic, and transport properties of the single- and double-atomic In layers have been elucidated in detail.