Abstract
We report on thermal atomic layer deposition of iron selenide (FeSe and Fe3Se4) thin films with four-inch wafer-scale uniformity using two precursors of iron bis(N, N′-diisopropylacetamidinato) [Fe(i-Pr-Me-AMD)2] and bis(triethysilyl) selenide [(Et3Si)2Se]. The temperature window is determined to be 350–400 °C. The transformation from tetragonal FeSe to monoclinic Fe3Se4 has been found. The tetragonal FeSe thin films exhibit a strong (00 l) texture deposited on amorphous silica glass, suggesting that the surface is partially parallel to the layered ab plane. By adjusting the ratio of iron and selenium, the thin films exhibit from conductors to semiconductors, and finally to insulators. All as-grown conductive samples appear metallic-like temperature dependence by low-temperature electrical transport measurements. This study opens the way to prepare various metal selenides by atomic layer deposition.
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