Low Doping Concentration Research Articles

Methodology for Enhanced Surge Robustness of 1.2-kV SiC MOSFET Body Diode

In this work, the influences of P-well design and turn-off gate-to-source bias on the surge robustness of SiC MOSFET’s body diode are studied. Devices with high and low P-well doping concentration designs are stressed with surge current pulses when the gate-to-source is biased with 0 or −5 V. The gate-to-source bias is found to have effects on the surge capability of the low P-well doping-designed device. In the case of 0-V bias, the channel is prone to turning on and acquires a higher surge capability than the devices under the −5 V. On the other hand, the surge capability of high P-well doping-designed device is found less influenced by the gate-to-source bias. Furthermore, threshold voltage instability after repetitive surge pulses is also investigated. The device with low P-well doping shows better threshold stability due to its lower interface trap density. Based on the results above, a design methodology is proposed from the view of device mechanism and operation condition. Relatively low P-well doping design and negative gate bias are recommended for SiC MOSFET, as they can improve the single-pulse surge robustness of body diode and minimize the threshold voltage instability in repetitive surge pulse events.

High‐Performance Deep‐Blue OLEDs Harnessing Triplet–Triplet Annihilation Under Low Dopant Concentration

Organic blue emitters capable of proceeding triplet–triplet annihilation (TTA) are of great importance for high‐efficiency blue organic light‐emitting diodes (OLEDs). Herein, two deep‐blue emitters PAPE and PAPF with two diphenylanthracene (DPA) moieties linked by fluorene and ether, respectively, together with a single DPA model emitter PAPES are synthesized and characterized. Theoretical calculations indicate that the TTA mechanism of these materials is energetically favorable, which is evidenced by platinum octaethylporphyrin‐sensitized TTA‐upconversion (UC) study. The OLED devices employing o‐DiCbzBz host doped with a low concentration of (1%) PAPE and (3%) PAPF furnish superior maximum external quantum efficiency (EQEmax) up to 7.3% and 7.2% and realize deep‐blue emissions with Commission International de L’Eclairge (CIE) coordinates of (0.15, 0.05) and (0.15, 0.04), respectively, that outperform the model device doped with (1%) PAPES with EQEmax 4.12%. The delayed emission lifetimes from TTA of PAPE‐ and PAPF‐doped devices observed by the time‐resolved electroluminescence (EL) analyses are rather short. Fast TTA is observed with magneto‐electroluminescence, supporting the possibility of intramolecular TTA operation in the devices. This work manifests the potential of multichromophoric strategy to design fluorescent emitters that is able to boost the efficiency of deep‐blue OLEDs even with a low doping concentration.

Impact of benzimidazole functional groups on the n-doping properties of benzimidazole derivatives

Abstract n-Dopants play a crucial role in improving organic electronic devices through controlled doping of organic semiconductors. Benzimidazoline-based dopants have been reported as one of the best solution-processed n-type dopant precursors. In this study, two benzimidazoline-based dopants (BIBDTO and BBIBDTO) were prepared using benzo[1,2-b:4,5-b′]dithiophene as the 2-Ar unit, and their n-doping properties on the fullerene derivative PTEG-2 as the host material were carried out. For BIBDTO and BBIBDTO, respectively, the temperature at which 5% weight loss was achieved was 229 and 265°C. By comparing the ultraviolet-visible absorption spectroscopy, cyclic voltammetry, and density functional theory calculated data, it is found that BBIBDTO has a higher energy level, which is more favorable for charge transfer. Additionally, both the oxidative titration experiments and conductivity characterization of the dopants showed that BBIBDTO was more advantageous at low doping concentrations, and the BBIBDTO-doped PTEG-2 films obtained a conductivity of 0.15 S cm−1 at 10 mol% doping concentration. However, at high dopant concentrations, the dopant volume increases, potentially disrupting the microstructure. The highest conductivity of 0.29 S cm–1 was obtained at a BIBDTO doping concentration of 15 mol%. This study delves into the effect of benzimidazole functional groups on the doping performance of benzimidazoline-based dopant molecules, providing insight into designing novel efficient n-type dopant molecules and further selecting the type of dopant for various doping systems.

Local Crystalline Structure of Doped Semiconductor Oxides Characterized by Perturbed Angular Correlations: Experimental and Theoretical Insights

Doping semiconductor oxides with trace amounts of non-native elements can improve their properties such as bandgap and conductivity. The lack of local techniques makes the precise characterization of these materials difficult. Among the few techniques capable of providing local characterization, those based on hyperfine interactions at probe nuclei have the advantage of being well established, probing the material homogeneously and completely, thus investigating different regions of material. Some of these techniques are also quite sensitive even at extremely low dopant concentrations. The perturbed angular correlation technique, combined with first-principles calculations, has recently been shown to be a powerful method for characterizing doped semiconductor oxides. In this paper, we present a brief review of the unique information extracted from the semiconductor investigation with such a complex approach, including semiconductor oxides doped with cadmium and other elements. A strong relationship between the local environment, including electronic structure, and the nature of the dopant and the native element of the doped oxides is also shown.

Enhanced 532 nm laser damage threshold and optical performance of KDP crystals by Zn2+ doping

Potassium dihydrogen phosphate (KDP) single crystals doped with a series of trace Zn2+ were prepared by “point seed” technique. The content of Zn of KDP crystal was detected using inductively coupled plasma-optical emission spectrometer (ICP-OES). Small differences were found in Zn content of pyramidal and prismatic samples. The ultraviolet–visible (UV–vis) spectra show that the transmitting percentage of doped KDP crystals increases with trace Zn2+ while the transmittance of crystal samples with excessive Zn2+ reduces in UV region. The structural analysis has been performed using infrared spectroscopy (IR). The results illustrate that the crystal network becomes compact after heat treatment or with low concentration doping. The photoluminescence (PL) spectra analysis indicates that the concentration of micro defects of all doped pyramidal samples is lower than that of un-doped samples as well as doped prismatic samples. After thermal annealing, the intensity of PL spectrum of doped sample decreases not obvious compared to un-doped samples. The laser-induced damage threshold (LIDT) results show that the un-doped prismatic sample has relative the lowest LIDT of 3.59 J/cm2 under the condition of 1-on-1. The LIDT of prismatic sample doped with 1000 ppm Zn2+ reaches 13.88 J/cm2 in the test mode of R-on-1 after heat treatment, which mainly is attributed to the relatively low concentration of micro defects.

Synthesis of antibacterial silver and zinc doped nano-hydroxyapatite with potential in bone tissue engineering applications

Nano-hydroxyapatite doped with either Ag+ or Zn2+ has been synthesized using the sol-gel precipitation method at conditions of low dopant content (dopant/Ca2+ molar ratio of 0.006 and 0.012) and low temperature (around 200 °C). The synthesized materials show length dimensions of 10–40 nm, low crystallinity, and rod-shaped particles for the Zn2+ doped samples. Through the simulated body fluid assay, the ability of the materials to nucleate the formation of apatite on their surface was examined. The viability of human dental pulp stem cells cultured with the materials was evaluated after 3 and 7 days, and the osteogenic differentiation of cells cultured with the materials was assessed through the activity of the alkaline phosphatase. In addition, the antibacterial activity against Aggregatibacter actinomycetemcomitans, an important microorganism related to oral infections, was studied by counting bacterial colony-forming units cultured in the presence of the materials. All the materials showed biocompatibility with human dental pulp stem cells, osteoinductive potential, and antibacterial activity against Aggregatibacter actinomycetemcomitans, highlighting among them the Zn2+ doped nano-hydroxyapatite samples. Considering the importance of hydroxyapatite in the field of medical and dental applications of ceramic materials, and the pathologies induced by Aggregatibacter actinomycetemcomitans in oral tissues, the adequate balance between the biocidal activity and biocompatibility of these synthetic nano-hydroxyapatite materials highlights their potential for biomedical and dental applications.

Indium as a surfactant: Effects on growth morphology and background impurity in GaN films grown by ammonia-assisted molecular beam epitaxy

We report on the improvement of the surface morphology of c-plane GaN films grown at high growth rates (∼1 µm/h) using ammonia molecular beam epitaxy through a series of growth optimizations as well as the introduction of indium as a surfactant. The indium surfactant was expected to help with the adatom mobility and, thus, provide smoother growth surfaces. Through a combination of varying V/III ratios, In flux, and growth temperatures, an optimal condition for surface morphology, characterized by atomic force microscopy, was achieved. At higher Ga fluxes for fast growth rates (∼1 µm/h and beam equivalent pressures of ∼5 × 10−7 Torr), higher ammonia flows were necessary to preserve the surface morphology. In addition, indium was an effective surfactant—reducing the roughness and improving the overall surface morphology. However, excessive indium causes the surface morphology to degrade, potentially due to the enhancement of the Ga desorption from the surface as a result of the reaction of indium with ammonia for high indium fluxes. The indium surfactant also resulted in a reduction of background Si impurity concentrations in the film. These effects allow for the growth of thick drift layers with low background dopant concentrations for vertical GaN power devices.

A study on MOCVD growth window for high quality N-polar GaN for vertical device applications

Lateral N-polar GaN devices have outperformed Ga-polar GaN counterparts in mm-wave applications. A vertical N-polar GaN device structure with higher breakdown voltage is expected to further improve the output power density. This paper is aimed at understanding the growth conditions for such a vertical N-polar GaN device stack. A vertical device stack requires high-quality n-GaN layer with low unintentional dopant concentration and high electron mobility for better ON resistance–breakdown voltage performance. A systematic study by varying reactor temperature, pressure and NH3 flow rate is performed in the metal organic chemical vapor deposition growth of N-polar GaN for vertical device structure. Structural quality of the sample is increased with increase growth temperature and higher NH3 flow rate, yet an increase in surface roughness is observed for highest temperature used. The N-polar GaN grown at the optimized conditions exhibited a x-ray diffraction rocking curve full width half maximum of symmetric (0002) and skew-symmetric (20 ) scans of 358″ and 569″ respectively with a low oxygen and carbon concentration of 6 × 1016 cm−3 and 5 × 1016 cm−3, respectively. The optimized sample exhibited a low screw dislocation density of 2.5 × 108 cm−2 on sapphire substrate. A gradual increase in the bulk mobility of electrons with decrease in screw dislocation density in N-polar GaN is also reported.

Microstructural evolution and tribology of Mo-doped diamond like carbon nanocomposite film

To explore the microstructure and tribology property evolution of diamond-like carbon (DLC) film with variable Mo concentrations, Mo-doped DLC films were prepared by magnetron sputtering equipment. The results showed that the Mo concentration in the DLC films increased from 2.1 to 30 at% with the Ar/C2H2 gas flow ratio (3:1–9:1). Mo was dispersed in DLC film at a low doping concentration (2.1 at%). Moreover, MoC nanocrystals were present, and a nanocrystal/amorphous microstructure was formed at a high doping concentration (≥8.3 at%). The DLC films with 2.1 at% Mo showed the best adhesion (200 mN) and the minimum wear rate (1.47 × 10−8 mm3/ N·m), and high Mo concentration (≥8.3 at%) was detrimental to wear resistance and adhesion.

Laminated structure of phosphor-in-glass films on sapphire with high color rendering index and heat-conducting properties for high-power white LEDs/LDs

As an all-inorganic solid state lighting material, phosphor-in-glass (PiG) receives much attention in high-power white lighting. However, poor heat-dissipation performance and low color rendering index (Ra) caused by low doping concentration of phosphor limit its application in white laser diodes (wLDs). Herein, phosphor-in-glass films on sapphire (PiFS) with heat-conducting properties and high Ra were newly synthesized via screen printing technology, which is highly desired for high-power wLEDs/wLDs. The interfacial corrosion product of CaWO 4 between nitride phosphor (CaAlSiN 3 :Eu 2+ ) and borosilicate glass (BS-glass) was found and investigated in detail firstly to determine the sintering temperature. Laminated structure of PiFS with red layer inside and green layer outside was intentionally designed to effectively avoid “reabsorption” effect between the red and green emitting phosphors. Compared with the opposite laminated structure, the PiFS exhibited the higher luminance efficiency (LE) and better optical properties (Ra = 85, CCT = 5362, CIE = (0.3348, 0.3156)) in wLDs. Notably, the adjustable optical characteristics can be achieved by changing the concentration of phosphor, the number of printing layers and the driving current for the application of PiFS in wLED and wLDs. High quality white light in wLED with CIE coordinates (0.3679, 0.3648) was also acquired and showed the excellent color rendering property (Ra = 90.8) and low color correlated temperature (CCT = 4280 K). Further, the working temperature of PiFS stabilized at 47 °C when applied in wLDs (1 W), which greatly prevented the phenomenon of “thermal quenching” for the phosphors caused by high temperature under high power LDs. Thus, high Ra PiFS prepared by this strategy has better heat dissipation and optical properties than PiG, indicating a prospective application in high-power white LEDs/LDs. • Reabsorption effect is overcome by special laminated structure of PiFS. • Tunable high color quality wLED/wLD is achieved by flexible designability. • Corrosion product (CaWO 4 ) is firstly discovered to control the sintering temperature. • Enhanced heat-conducting property is obtained via a heat dissipation module.

Nitrogen Dense Distributions of Imidazole Grafted Dipyridyl Polybenzimidazole for a High Temperature Proton Exchange Membrane.

The introduction of basic groups in the polybenzimidazole (PBI) main chain or side chain with low phosphoric acid doping is an effective way to avoid the trade-off between proton conductivity and mechanical strength for high temperature proton exchange membrane (HT-PEM). In this study, the ethyl imidazole is grafted on the side chain of the PBI containing bipyridine in the main chain and blended with poly(2,2′-[p-oxydiphenylene]-5,5′-benzimidazole) (OPBI) to obtain a series of PBI composite membranes for HT-PEMs. The effects of the introduction of bipyridine in the main chain and the ethyl imidazole in the side chain on proton transport are investigated. The result suggests that the introduction of the imidazole and bipyridine group can effectively improve the comprehensive properties as HT-PEM. The highest of proton conductivity of the obtained membranes under saturated phosphoric acid (PA) doping can be up to 0.105 S cm−1 at 160 °C and the maximum output power density is 836 mW cm−2 at 160 °C, which is 2.3 times that of the OPBI membrane. Importantly, even at low acid doping content (~178%), the tensile strength of the membrane is 22.2 MPa, which is nearly 2 times that of the OPBI membrane, the proton conductivity of the membrane achieves 0.054 S cm−1 at 160 °C, which is 2.3 times that of the OPBI membrane, and the maximum output power density of a single cell is 540 mW cm−2 at 160 °C, which is 1.5 times that of the OPBI membrane. The results suggest that the introduction of a large number of nitrogen-containing sites in the main chain and side chain is an efficient way to improve the proton conductivity, even at a low PA doping level.

Systematic Variations in Structural and Photoluminescence Properties Produced in Zn Oxide Nanostructures by Cu (0-5)% Substitution

Effects of Cu addition (0-5)% in ZnO are studied for structural and optical properties. The structural, photoluminescence properties and vibrational modes are strongly influenced with the Cu incorporation. Detailed investigations of the structural features of Cu doped ZnO nanostructures are reported. Our results show the systematic decrease in crystallite size (50.40 - 37.56 nm), lattice strain (1.82 - 1.49 micro), lattice stress (216.33 - 177.64 MPa) and energy density (196.78 - 132.69 KJ/m3) in the limit of small dopant concentration (0 < Cu ? 0.02). Decreasing trends are attributed to the smaller ionic size of Cu in comparison of Zn. Beyond Cu= 0.02 an increasing trend was noticed in crystallite size (41.67 - 70.67 nm), lattice strain (1.90 – 3.11 micro), lattice stress (226.32 – 369.35 MPa) and energy density (215.40 – 573.67KJ/m3. This increase in structural parameters is attributed to segregation of secondary phases for Cu content increase beyond 0.02. Two prominent regions in PL spectra were observed and the deconvoulution of these regions show a strong correlation with the structural changes observed within the limit of high and low dopant concentration. The FTIR spectra show shift of Zn-O vibrational mode toward higher frequency with increasing Cu concentration.

The Gd2-xMgxZr2O7-x/2 Solid Solution: Ionic Conductivity and Chemical Stability in the Melt of LiCl-Li2O.

Materials with pyrochlore structure A2B2O7 have attracted considerable attention owing to their various applications as catalysts, sensors, electrolytes, electrodes, and magnets due to the unique crystal structure and thermal stability. At the same time, the possibility of using such materials for electrochemical applications in salt melts has not been studied. This paper presents the new results of obtaining high-density Mg2+-doped ceramics based on Gd2Zr2O7 with pyrochlore structure and comprehensive investigation of the electrical properties and chemical stability in a lithium chloride melt with additives of various concentrations of lithium oxide, performed for the first time. The solid solution of Gd2−xMgxZr2O7−x/2 (0 ≤ x ≤ 0.10) with the pyrochlore structure was obtained by mechanically milling stoichiometric mixtures of the corresponding oxides, followed by annealing at 1500 °C. The lattice parameter changed non-linearly as a result of different mechanisms of Mg2+ incorporation into the Gd2Zr2O7 structure. At low dopant concentrations (x ≤ 0.03) some interstitial positions can be substituted by Mg2+, with further increasing Mg2+-content, the decrease in the lattice parameter occurred due to the substitution of host-ion sites with smaller dopant-ion. High-density ceramics 99% was prepared at T = 1500 °C. According to the results of the measurements of electrical conductivity as a function of oxygen partial pressure, all investigated samples were characterized by the dominant ionic type of conductivity over a wide range of pO2 (1 × 10–18 ≤ pO2 ≤ 0.21 atm) and T < 800 °C. The sample with the composition of x = 0.03 had the highest oxygen-ion conductivity (10−3 S·cm−1 at 600 °C). The investigation of chemical stability of ceramics in the melt of LiCl with 2.5 mas.% Li2O showed that the sample did not react with the melt during the exposed time of one week at the temperature of 650 °C. This result makes it possible to use these materials as oxygen activity sensors in halide melts.

Aluminum Activation in 4H-SiC Measured on Laterally Contacted MOS Capacitors with a Buried Current-Spreading Layer

The excellent material properties of the wide band gap semiconductor SiC are accompanied by challenges in device processing. Of particular importance is the incomplete activation of implanted Al acceptors after high-temperature annealing. In this work, we present a novel approach in applying the differential-capacitance method to lateral MOS capacitors, where systematic errors in its characterization are reduced by introducing a buried current-spreading layer. We find that the implantation of an additional current-spreading layer significantly reduces series resistance effects and enables a reliable capacitance-voltage measurement of low dopant concentrations of p-type wells in n-type epitaxial layers. The measurement of an Al box-like profile implanted at 500 °C and resulting in a doping concentration of 3·1017 cm-3 shows full activation after annealing at 1800 °C for 30 minutes.

Influence of relative humidity on CO2 interaction mechanism for Gd-doped SnO2 with respect to pure SnO2 and Gd2O3

The paper aims to identify the CO2 interaction mechanism for chemical sensors based on Gd-doped SnO2, SnO2 and Gd2O3 powders deposited as thick sensitive layers. The low reactivity of CO2 conferred by the thermodynamic stability and chemical inertia can be offset by the presence of relative humidity. The sensitive powders were prepared by wet chemical co-precipitation method. The Gd concentration was varied from 1% to 20 at% in order to determine the limit for Gd integration as a doping ion prior to chemical segregation as a secondary phase. Analytical transmission electron microscopy points to a homogeneous Gd doping of the nanostructured SnO2 powders for low doping concentrations and the formation of a nanocomposite based on SnO2 as main phase and cubic Gd2O3 as secondary phase for the highly doped samples. The electrical resistance is either influenced by the density of oxygen vacancies, or is the result of compensation for two opposite behaviours into the SnO2-Gd2O3 nanocomposite structures. The CO2 exposure to humid atmosphere determines distinct behaviours corresponding to SnO2 and Gd2O3 as constitutive elements. The associated CO2 interaction mechanism is based on simultaneous DC electrical resistance and Contact Potential Difference measurements, which allow decoupling the ionosorption from the dipolar processes, thus highlighting specific chemical interactions on the SnO2 and Gd2O3 surfaces.

Activators lattice migration strategy customized for tunable luminescence of Ce3+ doped β-Ca3(PO4)2

The luminescent properties of phosphors are determined by the electronic configuration of their activators and the crystal environment in which they are embedded. By manipulating the site-selective occupancy of activators, we can coordinately control the local crystal field and electron cloud distribution to master the movement of emission wavelength and obtain a color-tunable phosphor. The system of β-Ca3(PO4)2 is an excellent carrier for crystal-site engineering to modify luminescent performance. It has five distinct crystal sites and a strong photoluminescence response. However, due to low doping concentration and structural complexity, the specific occupation of Ce remains unknown. We discussed the specific position of Ce in this study and proposed a novel activators lattice migration strategy for controlling the relative strength of crystal field splitting (CFS) and the nephelauxetic effect (NE) to control luminescence properties. By combining X-ray Absorption Fine Structure (XAFS) with DFT calculation, we predicted the local environment of each crystal lattice and migrated Ce3+ from M(3) to a strengthened crystal field site with a lower coordination number, shorter bonding bond length, and greater polyhedral distortion, M(5), resulting in phosphors with tunable luminescence emission. Relevant parameters ΔD(Ce3+) were identified for dealing with interference caused by the electronegativity difference during a structural modification. Some potential applications emerged as a supplement and an intriguing QR-code and response program for epidemic prevention were demonstrated. This structure–activity relationship-based strategy provides new inspiration for designing luminescent materials with tunable emission and a broader range of applications.

Comprehensive study of amorphous metal oxide and Ta2O5 -based mixed oxide coatings for gravitational-wave detectors

High finesse optical cavities of current interferometric gravitational-wave detectors are significantly limited in sensitivity by laser quantum noise and coating thermal noise. The thermal noise is associated with internal energy dissipation in the materials that compose the test masses of the interferometer. Our understanding of how the internal friction is linked to the amorphous material structure is limited due to the complexity of the problem and the lack of studies that span over a large range of materials. We present a systematic investigation of amorphous metal oxide and Ta$_2$O$_5$-based mixed oxide coatings to evaluate their suitability for low Brownian noise experiments. It is shown that the mechanical loss of metal oxides is correlated to their amorphous morphology, with continuous random network materials such as SiO$_2$ and GeO$_2$ featuring the lowest loss angles. We evaluated different Ta$_2$O$_5$-based mixed oxide thin films and studied the influence of the dopant in the optical and elastic properties of the coating. We estimated the thermal noise associated with high-reflectance multilayer stacks that employ each of the mixed oxides as the high index material. We concluded that the current high index material of TiO$_2$-doped Ta$_2$O$_5$ is the optimal choice for reduced thermal noise among Ta$_2$O$_5$-based mixed oxide coatings with low dopant concentrations.

Visualization of Macrophase Separation and Transformation in Immiscible Polymer Blends

Visualization of Macrophase Separation and Transformation in Immiscible Polymer Blends

Production of Antibacterial Activity and Bone Cell Proliferation by Surface Engineering of Ga‐ or Mn‐Doped Ceria‐Coated Biomedical Titanium Alloy

The present work reports a detailed interpretation of the role of Ga and Mn dopants, solid solubility mechanisms, charge compensation mechanisms, intervalence charge transfer, antibacterial performance, and cell attachment and proliferation. Sol–gel undoped and doped (1, 5, and 9 mol%) CeO2films are spin‐coated on 3D printed Ti6Al4V biomedical alloy substrates and annealed at 650 °C for 2 h in air. Material characterization includes scanning electron microscopy (SEM), 3D scanning laser confocal microscopy, glancing angle X‐ray diffraction (GAXRD), and X‐ray photoelectron spectroscopy (XPS). In vitro testing includes inhibition of bacterial growth, simulated body fluid (SBF) testing, and cell attachment and proliferation studies. The most significant outcome is that the bioactivity of ceria derives directly from the Ce3+concentration, which itself results from solid solubility (substitutional and interstitial) and charge compensation and redox. This challenges the common assumption of the dominance of oxygen vacancies in the performance of ceria. The antibacterial activity is dependent on the type, amount, and valence of the dopant, where opposite trends are observed for gram‐positiveStaphylococcus aureusand gram‐negativeEscherichia colibacteria. All of the doped samples result in enhanced cell proliferation, although this is greatest at the lowest dopant concentration. Surface hydroxyapatite formation on the samples is achieved by soaking in SBF at 2 weeks and 1 month.

Effect of Low-Doping Concentration on Silver-Doped SnO2 and its Photocatalytic Applications

Stannic Oxide (SnO2) is in the class of metal oxide semiconductors, which is widely employed in a series of applications because of its excellent electrical and optical properties. In this study, we reported the synthesis of undoped and silver (Ag) doped SnO2 via a simple coprecipitation technique to study the photocatalytic activities of Ag/SnO2. Different characterization techniques, such as XRD, SEM, EDX, FTIR, RAMAN, and DRS were used to study the effect of the doping concentration of Ag on the structural, morphological, compositional, and optical properties of SnO2. The XRD spectrum showed the tetragonal structure of SnO2 and Ag/SnO2. The SEM micrographs show the irregular distribution of particles with different shapes and sizes. The EDX results show the incorporation of the Ag element into SnO2. The optical property shows narrowed bandgap energy with Ag content. The photocatalytic activity of the samples was studied by the photocatalytic degradation of Methylene Blue (MB) dye. The photocatalytic activity results reveal that 1wt% of Ag/SnO2 has a better photocatalytic performance of 97.63% when compared to undoped SnO2.