Low Bias Voltage Research Articles

Influence of applied magnetic field in an air-breathing microwave plasma cathode

The air-breathing electric propulsion concept refers to a spacecraft in very-low Earth orbit (VLEO) ingesting upper atmospheric air as propellant for an electric thruster. This compensates atmospheric drag and allows the spacecraft to maintain its orbital altitude, removing the need for on-board propellant storage and allowing an extended mission duration which is not limited by propellant exhaustion. There is a need for development of a robust, high current density and long life cathode (or neutralizer) for air-breathing electrostatic thrusters as conventional thermionic hollow cathodes are susceptible to oxygen poisoning. An Air-breathing Microwave Plasma CAThode is proposed to overcome this issue through the use of a microwave plasma discharge, producing an extracted current in the order of 1 A with 0.1 mg s−1 of air. In this paper, the effect of varying magnetic-field strength and topology is investigated by using an electromagnet coil, which reveals a significantly different behaviour for air compared to xenon. The extracted current with xenon increases by 3.9 times from the zero-field value up to a peak around 150 mT magnetic-field strength at the antenna, whereas an applied field does not increase the extracted current with air at nominal conditions. A non-zero magnetic-field with air is however beneficial for current extraction at reduced neutral densities. A distinct increase in extracted current is identified at low bias voltages with air for a field strength of around 50 mT at the internal microwave antenna, consistent across varying field topologies. The effect of a lowered magnetic-field strength in the orifice region is investigated through the use of a secondary coil, resulting in an extracted current increase of 25% for a relaxation from 6 mT to 1 mT, and demonstrating the beneficial impact of a locally reduced field strength on electron extraction.

Photoconduction Properties in Tungsten Disulfide Nanostructures.

We reported the photoconduction properties of tungsten disulfide (WS2) nanoflakes obtained by the mechanical exfoliation method. The photocurrent measurements were carried out using a 532 nm laser source with different illumination powers. The results reveal a linear dependence of photocurrent on the excitation power, and the photoresponsivity shows an independent behavior at higher light intensities (400-4000 Wm-2). The WS2 photodetector exhibits superior performance with responsivity in the range of 36-73 AW-1 and a normalized gain in the range of 3.5-7.3 10-6 cm2V-1 at a lower bias voltage of 1 V. The admirable photoresponse at different light intensities suggests that WS2 nanostructures are of potential as a building block for novel optoelectronic device applications.

Superconducting Complementary Metamaterial‐Based Switchable Device for Terahertz Wave Manipulation

Herein, a tunable superconducting switch that can modulate terahertz waves is designed and experimentally demonstrated. The switchable device consists of two symmetrical split ring resonator antistructures made from niobium nitride film in one unit cell. The relatively high modulation depths of 88.5% can be obtained at resonance peaks of 0.328 THz by applying a very low bias voltage of 0.8 V. Due to the presence of higher‐order resonance modes, the superconducting device also demonstrates a multiband tuning ability at 1.03 and 1.16 THz. To further analyze the modulation mechanism of the superconducting device, the temperature dependence of the switchable device is also measured. The trends of conductivity change are calculated based on the Bardeen–Cooper–Schrieffer theory and the simulations agree well with the experimental results. During the experiment, this device not only owns a good switching capability but also shows significant frequency selective bandpass characteristics. This study delivers a promising approach for designing active and miniaturized devices, especially for applications in THz cryogenic systems.

Electric‐Dipole Gated Two Terminal Phototransistor for Charge‐Coupled Device

AbstractThe demand for charge‐coupled device (CCD) imagers has surged exponentially during the last decade owing to their exceptionally high quality and low noise imaging. However, they are still confronting the performance constraints of high operation power, low speed, and limited charge integration. Here, the electric‐dipole gated phototransistor operation without external gate bias is reported by using high‐k HfO2 dielectric material. The electrostatic coupling of photogenerated charges from the Si with the graphene channel through a 10 nm HfO2 layer is demonstrated. The device exhibits remarkable performance in the broadband spectrum (266–1342 nm) at low drain bias voltage. The high values of responsivity, external quantum efficiency, and detectivity of 3.7 × 103 A W−1, 0.72 × 104, and 6.20 × 1013 cmHz½ W−1, respectively, for 800 nm wavelength and 3.3 × 103 A W−1, 1.31 × 104, and 5.61 × 1013 cmHz½ W−1, respectively, for 400 nm wavelength without gate are achieved. This discovery may potentially eliminate the requirement for gate terminals from commercial CCD devices. The power efficient features of this gateless image sensor can be fabricated at the industrial scale for the future machine vision market.

Current-induced bond rupture in single-molecule junctions: Effects of multiple electronic states and vibrational modes.

Current-induced bond rupture is a fundamental process in nanoelectronic architectures, such as molecular junctions, and scanning tunneling microscopy measurements of molecules at surfaces. The understanding of the underlying mechanisms is important for the design of molecular junctions that are stable at higher bias voltages and is a prerequisite for further developments in the field of current-induced chemistry. In this work, we analyze the mechanisms of current-induced bond rupture employing a recently developed method, which combines the hierarchical equations of motion approach in twin space with the matrix product state formalism and allows accurate, fully quantum mechanical simulations of the complex bond rupture dynamics. Extending previous work [Ke et al. J. Chem. Phys. 154, 234702 (2021)], we consider specifically the effect of multiple electronic states and multiple vibrational modes. The results obtained for a series of models of increasing complexity show the importance of vibronic coupling between different electronic states of the charged molecule, which can enhance the dissociation rate at low bias voltages profoundly.

Parametrization of electron sheath expansion for Langmuir probe I-V traces

The Langmuir probe is a common plasma diagnostic widely utilized in various fields of plasma physics, and its associated methods of data analysis remains in active development. In this work, we present an attempt using a power law parametrization model similar to Sheridan's empirical formulation is to describe the sheath expansion effect on electron current in an argon plasma. The fitting results using the power law parametrization method show observably better consistency compared to those using conventional interception method and inflection method. It is also observed that when used to fit the electron saturation current at probe bias voltages well beyond the plasma potential plus the argon ionization energy, resultant curve fitted by power law parametrization, as with that by linear fitting, deviates significantly from the curve fitted at lower bias voltages, albeit the saturation obtained fitted using the power law method remained consistent with that fitted at lower probe bias voltages. Probable causes of this deviation include anode glow or spots near the probe and the changes of the global plasma parameters via electron absorption at very high probe bias. The fact that the resultant electron saturation current remained consistent hints that these non-trival effects can also be approximated by power law parametrization.

Технологія кремнієвих p-i-n фотодіодів зі зменшеною кількістю термічних операцій

The main parameters of the p-i-n photodiodes (PD) are responsivity, dark current and capacity of responsive elements (RE). To ensure the maximum values of the specified parameters, it is necessary to use defect-free silicon with the maximum values of resistivity and life time of minor charge carriers. These characteristics of the starting material degrade during high-temperature thermal operations. Therefore, it is worth using a technology that allows you to avoid the degradation of silicon characteristics. This can be implemented by reducing the temperature of diffusion and oxidation operations, as well as by reducing the number of actual thermal operations. The samples were made according to two versions of the technology: diffusion-planar using two-stage diffusion of phosphorus from planar sources, and mesotechnology using one-stage diffusion of phosphorus using liquid PCl3 diffusant. After manufacturing, the PD parameters were compared. The use of mesotechnology with one-stage diffusion of phosphorus made it possible to reduce the number of thermal operations by two times compared to serial technology. The experimental samples had a pulse responsivity at a wavelength of 1.064 μm of 0.47-0.50 A/W, and the serial ones had a responsivity of 0.45-0.48 A/W. The difference in responsivity is caused by the difference in the life time of minor charge carriers, since in the case of the proposed technology, the degree of degradation of the life time of minor charge carriers during the manufacturing process is smaller. After selective etching, it was seen that when using a liquid diffusant, the density of dislocations on the crystal surface is much higher than when using planar sources of phosphorus. Due to the higher density of dislocations, the experimental samples had higher dark currents, but when using a low bias voltage, the difference in dark currents is insignificant. The RE capacity of the experimental samples was slightly lower than that of the serial ones. This can be explained by the difference in the resistivity of the i-region of the final crystals.

Effects of oxygen contents on the physical properties of MgO films and carrier transport of Au/MgO/ZnO MIS diodes

MgO films with various oxygen contents were deposited on ZnO using radio-frequency magnetron sputtering, and Au/MgO/ZnO metal-insulator-semiconductor (MIS) diodes were fabricated. The effects of various oxygen contents on the physical properties of MgO and the carrier transport in MIS diodes were studied. The crystallinity of MgO films improved with increased oxygen content up to 66%; however, the crystallinity degraded upon further increase of oxygen content up to 100%. X-ray photoelectron spectroscopy showed that the oxygen vacancies were compensated by the introduced oxygen atoms; however, the excess oxygen atoms could not fill the lattice sites and were instead absorbed on the MgO surface. The optical bandgaps of MgO films increased from 5.16 to 5.22 eV for 0 and 100% oxygen content, respectively, resulted by the suppressed oxygen vacancies. The average roughness of MgO films increased from 4.02 to 6.86 nm for 0 and 100% oxygen content, respectively. As compared to MIS diodes without oxygen content, the leakage current was reduced by approximately 300 times in MIS diodes with 66% oxygen content. At a high bias voltage (V ≥ 0.4V), MIS diodes without oxygen exhibited ohmic conduction. In contrast, MIS diodes with oxygen exhibited Fowler-Nordheim tunnelling at high bias voltages. With increasing oxygen content, the tunnelling barrier height increased to its maximum of 0.46 eV in MIS diodes with 66% oxygen content. Nevertheless, the barrier height reduced to 0.29 eV for the excess oxygen content up to 100%. However, at low-bias voltages, all MIS diodes demonstrated a direct tunnelling mechanism owing to their rectangular barriers.

Hydroxyl Radical-Mediated Efficient Photoelectrocatalytic NO Oxidation with Simultaneous Nitrate Storage Using A Flow Photoanode Reactor.

The selective conversion of dilute NO pollutant into low-toxic product and simultaneous storage of metabolic nitrogen for crop plants remains a great challenge from the perspective of waste management and sustainable chemistry. This study demonstrates that this bottleneck can be well tackled by refining the reactive oxygen species (ROS) on Ni-modified NH2 -UiO-66(Zr) (Ni@NU) using nickel foam (NF) as a three-dimensional (3D) substrate through a flow photoanode reactor via the gas-phase photoelectrocatalysis. By rationally refining the ROS to ⋅OH, Ni@NU/NF can rapidly eliminate 82 % of NO without releasing remarkable NO2 under a low bias voltage (0.3 V) and visible light irradiation. The abundant mesoporous pores on Ni@NU/NF are conducive to the diffusion and storage of the formed nitrate, which enables the progressive conversion NO into nitrate with selectivity over 99 % for long-term use. Through calculation, 90 % of NO could be recovered as the nitrate species, indicating that this state-of-the-art strategy can capture, enrich and recycle the pollutant N source from the atmosphere. This study offers a new perspective of NO pollutant treatment and sustainable nitrogen exploitation, which may possess great potential to the development of highly efficient air purification systems for industrial and indoor NOx control.

Hydroxyl Radical‐Mediated Efficient Photoelectrocatalytic NO Oxidation with Simultaneous Nitrate Storage Using A Flow Photoanode Reactor

AbstractThe selective conversion of dilute NO pollutant into low‐toxic product and simultaneous storage of metabolic nitrogen for crop plants remains a great challenge from the perspective of waste management and sustainable chemistry. This study demonstrates that this bottleneck can be well tackled by refining the reactive oxygen species (ROS) on Ni‐modified NH2‐UiO‐66(Zr) (Ni@NU) using nickel foam (NF) as a three‐dimensional (3D) substrate through a flow photoanode reactor via the gas‐phase photoelectrocatalysis. By rationally refining the ROS to ⋅OH, Ni@NU/NF can rapidly eliminate 82 % of NO without releasing remarkable NO2 under a low bias voltage (0.3 V) and visible light irradiation. The abundant mesoporous pores on Ni@NU/NF are conducive to the diffusion and storage of the formed nitrate, which enables the progressive conversion NO into nitrate with selectivity over 99 % for long‐term use. Through calculation, 90 % of NO could be recovered as the nitrate species, indicating that this state‐of‐the‐art strategy can capture, enrich and recycle the pollutant N source from the atmosphere. This study offers a new perspective of NO pollutant treatment and sustainable nitrogen exploitation, which may possess great potential to the development of highly efficient air purification systems for industrial and indoor NOx control.

Investigation of the structural and temperature-dependent electrical properties of MZnO (M = Ce and Sm) Schottky diode devices fabricated using the sol–gel spin-coating technique

In the present study, the Schottky diode devices based on Ce and Sm co-doped ZnO thin films were fabricated using the sol–gel spin-coating technique with Pd and Pt as Schottky contacts. The structural and electrical properties of the fabricated Schottky diode devices were investigated at room temperature and in the temperature range of 320–160 K. The crystalline structure of the prepared films was studied using X-ray diffraction spectroscopy. The I–V characteristics of the fabricated Schottky diode devices based on Pd and Pt Schottky contacts manifest good diode behavior with the rectification of nine and ten orders of magnitudes, respectively. The ideality factor for Pd-based Schottky diode was found to decrease with temperature, and the lowest value obtained at 160 K was 1.3, while for the Pt-based Schottky diode, the ideality factor was found to increase with decreasing temperature. Moreover, by using two Gaussian models, the barrier height for Pt Schottky diodes was found to decrease with decreasing temperature indicating the inhomogeneity in the barrier height. Furthermore, alongside the thermionic emission theory, the fabricated Schottky diode parameters were also analyzed with Cheung–Cheung and the modified Nord methods. Finally, the current transport mechanism in both fabricated Pd and Pt was found to be controlled by an Ohmic, trap-filled voltage and space-charge-limited current mechanisms in the low, moderate and higher voltage bias, respectively.

Understanding the Electroluminescence Mechanism of CdSe/ZnS Quantum-Dot Light-Emitting Diodes With a Focus on Charge Carrier Behavior in Quantum-Dot Emissive Layers

We analyzed the electroluminescence (EL) mechanisms of quantum-dot light-emitting diodes (QLEDs) with a focus on charge carrier trapping/detrapping. Multilayer quantum-dot (QD) emissive layers (EMLs) exhibit low void density and many QD surface traps, which provide high efficiency in the low bias voltage region; the efficiency gradually decreases in the high bias voltage region. The roles played by traps and charge carrier trapping/detrapping during QLED EL were revealed by transient EL and impedance spectroscopy analyses. Charge carrier trapping/detrapping of QLEDs with a multilayer QD EML in the low bias voltage region promoted charge injection, rapid initiation of EL, and high current efficiency. In contrast to the conventional view, traps improved QLED performance.

Self-biased and biased photo-sensitivity of Tin Mono-Selenide (SnSe) photonic crystal Photodetector under poly/monochromatic light

Recently, transition metal chalcogenides were found to be the most promising candidates for photosensor- and photodetector-based applications. This study reports the photodetection and response properties of tin selenide (SnSe) crystals grown by the direct vapour transport (DVT) technique. The basic properties of SnSe have been reported in a previous article. Photodetection properties are investigated using polychromatic or monochromatic light of varying intensities and bias voltages. Results depict that detectors work congenially under monochromatic sources of light. It is observed that responsivity (Rλ) is higher for red, while detectivity and sensitivity are observed to be maximum for blue light under the self-biased (no bias) condition. The results observed under varying intensity (spot size) in the absence of biassing suggest that as intensity rises, all the parameters of the photodetector are also rising, while at constant intensity (30 mW/cm2), by varying the bias voltage, the detectivity of red light is decreasing due to an increment in dark current. Photodetectors are more efficient at converting optical signals to electrical signals, and their sensitivity is colour-dependent. Mainly, it is observed that monochromatic light shows high sensitivity to low bias voltages, while polychromatic light shows high sensitivity to high voltages. Observed results point to the detection of both monochromatic and polychromatic light by the fabricated detector, which can be applied to SnSe-based devices. A device can be used to fabricate colour and intensity detection.

On‐chip bias‐generating architecture for an automotive application with a wide input dynamic range

SummaryThis paper presents an on‐chip bias‐generating architecture for automotive applications with a wide input range of 3.8–36 V in a 0.18‐ m high‐voltage bipolar‐CMOS‐DMOS (BCD) process. The proposed architecture effectively manages high‐voltage stress issues with few high‐voltage devices optimizing the silicon area. The proposed bias‐generator comprising crude‐reference and crude‐regulator generates a preliminary low bias voltage for the bandgap‐reference circuit. An adaptive‐biased, with‐capacitor, low‐dropout regulator generates a well‐regulated core supply with low quiescent current and better stability over the wide input range. The adaptive biasing expands the unity gain frequency with increasing load enabling a fast‐transient response. The proposed LDO provides a 5‐V output voltage and a load current of 10 A to 20 mA from 5.5‐ to 36‐V supply with a 500‐mV dropout voltage consuming a very low quiescent current of 5 A. With 0‐ to 20‐mA load step and an output capacitor of 1 F, an undershoot of 40 mV and an overshoot of 55 mV are achieved.

An Anti‐Ambipolar Cryo‐Phototransistor

AbstractNovel anti‐ambipolar transistors (AATs) are gate tunable rectifiers with a marked potential for multi‐valued logic circuits. In this work, the optoelectronic applications of AATs in cryogenic conditions are studied, of which the AAT devices consist of vertically stacked p‐SnS and n‐ MoSe2 nanoflakes to form a type‐II staggered band alignment. An electrostatically tunable p‐SnS/n‐MoSe2 cryo‐phototransistor is presented with unique anti‐ambipolar characteristics and cryogenic‐enhanced optoelectronic performance. The cryo‐phototransistor exhibits a sharp and highly symmetric anti‐ambipolar transfer curve at 77 K with the peak‐to‐valley ratio of 103 operating under a low bias voltage of 1 V. The high cooling‐enhanced charge mobilities in the cryo‐phototransistor grant this AAT device remarkable photodetection capabilities. At 77 K, the p‐SnS/n‐MoSe2 cryo‐phototransistor, holding a broad photoresponse in the spectral range of 250−900 nm, demonstrates its high responsivity of 2 × 104 A W−1 and detectivity of 7.5 × 1013 Jones with the excitation at 532 nm. The high‐performance p‐SnS/n‐MoSe2 low‐dimensional phototransistor with low operating voltages at 77−150 K is eligible for optoelectronic applications in cryogenic environments. Furthermore, the cryo‐characteristics of this heterostructure can be further extended to design the mul‐tivalued logic circuits operated in cryogenic conditions.

Visible light active rGO nanosheet encapsulated Pd quantum-sized dots decorated TiO2 nano-spheres for hydrogen gas sensing at low temperatures

Making reliable gas sensors that function at low temperatures is important for safely detecting hydrogen gas. This work proposes sensitising reduced graphene oxide (rGO) nanosheet encapsulated TiO2 nano-spheres (TiO2-NS) with highly sensitive Pd receptors (rGPT-NS). It demonstrates for the first time, hydrogen gas sensing of rGPT-NS under 490 nm visible light conditions at low operating temperatures (25–35 °C) using a low voltage bias (0.1 V). The method suppresses of the electron-hole recombination and creating interfacial nano-Schottky junctions (i.e., heterojunctions) to enhance sensing performances. As a result, chemiresistive based highly responsive, selective, stable, environmentally friendly, and energy-efficient rGPT-NS are synthesised via sol-gel and hydrothermal methods. The fabricated sensing material exhibits high responses of 100.23%, 100.28% and 100.36% with rapid response/recovery (19 s/62 s, 12 s/57 s and 11 s/53 s) towards 500 ppm hydrogen at 25 °C, 30 °C and 35 °C, respectively under 0.1 V and 490 nm visible light.

Half‐Metallic Heusler Alloy/GaN Heterostructure for Semiconductor Spintronics Devices

AbstractBecause spin‐orbit coupling in wurtzite semiconductors is relatively weak compared with that in zincblende ones, the III‐nitride semiconductor GaN is a promising material for high‐performance optical semiconductor spintronic devices such as spin lasers. For the purpose of reducing the operating power of spin lasers, it is necessary to demonstrate highly efficient electrical spin injection from a ferromagnetic material into GaN with a low‐resistance contact. Here, an epitaxial half‐metallic Heusler alloy Co2FeAlxSi1−x(CFAS)/GaN heterostructure is developed by inserting an ultrathin Co layer between the CFAS and GaN. The CFAS/n+‐GaN heterojunctions clearly show tunnel conduction with very small rectification and a low resistance‐area product of ≈3.8 kΩµm2, which is several orders of magnitude smaller than those reported in previous work, at room temperature. Nonlocal spin signals and a Hanle effect curve are observed at low temperatures using lateral spin‐valve devices with the CFAS/n+‐GaN contacts, suggesting pure spin current transport in bulk GaN. The spin transport is observed at temperatures as high as room temperature, with a high spin polarization of 0.2 at a low bias voltage less than 2.0 V. This study is expected to open a path to GaN‐based spintronic devices with highly spin‐polarized and low‐resistance contacts.

Full counting statistics in a Majorana single-charge transistor

We study full counting statistics of electron transport through a Majorana single-charge transistor. At low bias voltage, transport is dominated by the so-called Josephson-Majorana cycle, a sequence of normal and anomalous single-charge and Josephson tunneling. Factorial cumulants characterizing the full counting statistics elucidate the correlated nature of the charge transfers in this cycle. Moreover, we predict a topological transition in the full counting statistics from a perfect Poissonian transfer of Cooper pairs to a correlated switching between two distinct fermion parity states with increasing Josephson coupling.

Analysis of the Spectral Characteristics of the Responsivity of Diffusion <i>p-i-n</i> Photodiode Based on High Resistivity <p>p</p>-Si

This Taking into account the market need for highly responive silicon p-i-n photodiodes (PD) for detecting YAG-laser radiation (wavelength 1.064 μm), it was decided to investigate methods of increasing their responsivity, in particular, shifting the maximum of the spectral responsivity characteristic of the photodetector towards longer wavelengths, as well as to analyze the influence of various technological factors in its appearance. Research was conducted on silicon four-element p-i-n photodiodes with guard ring, manufactured by diffusion-planar and mesa technology. Single crystal p-type silicon with [111] orientation, resistivity of 13-21 kΩ and life time of minor charge carriers of 1.2-2 ms was used. It was found that when the reverse bias voltage increases, the maximum of the spectral characteristic shifts to longer wavelengths. This is caused by the expansion of the space charge region (SCR) with an increase in the bias voltage and, accordingly, an increase in the collection coefficient of charge carriers. When studying the spectral characteristic of samples with different resistivity, it was noticed that when the resistivity increases, the maximum of the spectral characteristic can be reached at a lower bias voltage. Because with a higher resistivity, the area of the SCR expands over the entire thickness of the substrate at a lower voltage. When expanding the space charge region to the maximum value, the responsivity level of the PD also reaches saturation. Accordingly, it makes no sense to use a bias voltage of the photodiode higher than the one at which the width of the SCR reaches the reverse side of the crystal. It is also seen that when the life time of minor charge carriers and silicon resistivity increases at the same bias voltage, the maximum of the spectral characteristic shifts to longer wavelengths. The maximum value of the spectral characteristic of 1.01-1.02 μm was reached. It was not possible to achieve a further shift, since the shape of the spectral characteristic of the sensitivity of photodetectors is primarily determined by the dependence of the collection coefficient of charge carrier on the wavelength, the maximum of which under normal conditions is at a wavelength of 0.8-0.9 μm. It is possible to achieve the maximum collection coefficient of charge carriers by optimizing the concentration of impurity in the p+- and n+- regions of the crystal, which allows minimizing the absorption of radiation in these regions. When using mesa technology, which minimizes the degradation of the resistivity of the material, no further shift of the maximum occurs, but the absolute value of responsivity increases compared to planar technology. For a wavelength of 1064 μm, a value of pulse responsivity of 0.5-0.53 A/W and 0.46-0.48 A/W was achieved for mesa- and planar PD, respectively (with a specific resistance of 20-21 kΩ), which is about 60% of the maximum value. It was also seen that a change in the depth of the PD diffusion layers can negatively affect the noise level. It was found that at a depth of n+-p-junction of 4.25 μm, the level of responsivity, at wavelengths below the maximum of the spectral characteristic, is the lowest, accordingly, the influence of background radiation noise on the level of the useful signal at this depth of p-n-junction is minimal.

Enhancing Hydrogen Sulfide Detection at Room Temperature Using ZIF-67-Chitosan Membrane.

Developing new materials for energy and environment-related applications is a critical research field. In this context, organic and metal-organic framework (MOF) materials are a promising solution for sensing hazardous gases and saving energy. Herein, a flexible membrane of the zeolitic imidazole framework (ZIF-67) mixed with a conductivity-controlled chitosan polymer was fabricated for detecting hydrogen sulfide (H2S) gas at room temperature (RT). The developed sensing device remarkably enhances the detection signal of 15 ppm of H2S gas at RT (23 °C). The response recorded is significantly higher than previously reported values. The optimization of the membrane doping percentage achieved exemplary results with respect to long-term stability, repeatability, and selectivity of the target gas among an array of several gases. The fabricated gas sensor has a fast response and a recovery time of 39 s and 142 s, respectively, for 15 ppm of H2S gas at RT. While the developed sensing device operates at RT and uses low bias voltage (0.5 V), the requirement for an additional heating element has been eliminated and the necessity for external energy is minimized. These novel features of the developed sensing device could be utilized for the real-time detection of harmful gases for a healthy and clean environment.