P-n Junction Research Articles

Modulation the carrier separation mechanism of CdS photoanode: From vacancy to crystal phase transformation

The photoelectrochemical (PEC) water splitting performance is conventionally limited by the process of photogenerated carrier separation and transport. This work provides an innovative strategy by combination of the spin-polarized electric field and homogeneous junction to address this critical issue. In this work, it finds that a spin-polarized electric field can be fabricated in the CdS photoanode with cubic phase by S vacancy intervention. Furthermore, after controlling the annealing temperature to reach 500 °C, cubic phase CdS photoanode translates to hexagonal phase by localized, forming a homogeneous junction CdS photoanode. By the synergy, the optimized CdS photoanode achieves a photocurrent density exceeding ∼5.0 mA/cm2 for hydrogen evolution under 100 mW/cm2 white light illumination, a 2.4-fold improvement over the performance of the unoptimized photoanodes. Thus, this work provides a novel method to regulation of the photogenerated carrier separation and transport processes for sulfur-based semiconductor photoelectrodes.

Design and simulation of bifacial perovskite solar cell with high efficiency using cubic plasmonic nanoparticles

Bifacial perovskite solar cells (Bi-PSCs) are gaining attention for their ability to exceed the efficiency limits of traditional single-junction cells by absorbing light from both the front and rear surfaces. This study explores a novel approach to boost the efficiency and stability of Bi-PSCs by integrating clusters of cubic metallic nanoparticles (NPs) within the absorber layer. These plasmonic NPs, embedded in the middle of the absorber layer, significantly enhance light absorption, resulting in substantial improvements in power conversion efficiency for both front and rear irradiation. Our three-dimensional simulations demonstrate that incorporating Ag-based NPs can achieve efficiency enhancements of 29.89 % (from 18 % to 23.39 %) for front irradiation and 29.63 % (from 17.22 % to 22.33 %) for rear irradiation. Ag-based NPs exhibit the most notable efficiency improvement, reaching a short-circuit current of 41.30 mA/cm2 and an efficiency of 35.34 % at an albedo of 0.5. To address potential issues such as corrosion and degradation of the perovskite material, the metallic NPs are encapsulated with a thin dielectric nano-shell of SiO₂. This encapsulation strategy effectively prevents degradation, ensuring the long-term stability of the Bi-PSCs. The results indicate that the use of clusters of cubic metallic NPs, combined with dielectric encapsulation, offers a superior approach to optimizing the performance and stability of Bi-PSCs, providing a more efficient alternative to increasing the absorber layer’s thickness.

Near zero-field magnetoresistance and defects in gallium nitride pn junctions

As gallium nitride (GaN) grows in importance, an atomic scale understanding of device performance is of significant relevance. In this paper, we present the first observations of near zero-field magnetoresistance (NZFMR) detecting electrically active defects in GaN-based devices. Our observations involve recombination current in GaN pn junction diodes. We attribute the NZFMR response to gallium vacancies.

The flexible transparent N-doped CuI/AgI pn junction towards enhanced photovoltaic conversion via interface transition of in situ iodization

The flexible transparent pn junction of N-doped CuI/AgI with interface transition is prepared via approach of continuous sputtering-in situ iodization method. N-doped CuI/AgI flexible pn junction exhibits transmittance of ∼85 %, photovoltaic enhancement of ∼1.3 × 104-folds, stable output during 10 weeks’ cycle, and good flexible bending stability (1500 bending, ∼83.5 %). It's mainly attributed to that the appropriate flat-band potentials gradient and increased carrier injection achieved through N-doping, as well as ameliorating interface carrier immigration/diffusion through in situ iodization, both contribute significantly to carrier kinetic equilibrium, while the N-doping can balance a high transparency via stable-wide bandgap and optimizing inner crystallinity interface scattering. Additionally, the inorganic monoiodides and PEN substrate can provide a decent flexible stability for its actual applications.

Fully tunable microwave photonic narrow bandpass filter using an on-chip dual-drive microring resonator

We propose and experimentally demonstrate a fully tunable microwave photonic narrow bandpass filter based on phase modulation to intensity modulation (PM-IM) conversion. In the filter implementation, an on-chip dual-drive microring resonator (MRR) is a key component. This resonator leverages a multimode waveguide to enable a high Q-factor. A metallic micro-heater and a lateral PN junction are simultaneously created for resonance wavelength tuning. When one driving signal is applied to the micro-heater, a large tuning range of the resonance wavelength is resulted; when another driving signal is applied to the PN junction, a fast tuning speed of the resonance wavelength is caused. By jointly using two different tuning mechanisms, the realized microwave photonic filter features a large frequency tuning range as well as a fast tuning speed. In addition, the filter bandwidth can also be tuned. A silicon-based dual-drive high-Q racetrack MRR chip is designed, fabricated, and evaluated. By incorporating the chip in a microwave photonic filter system, a bandpass filter with a narrow bandwidth of 1.27 GHz is achieved. An ultra-wide frequency tuning range from 3 to 51 GHz, an ultra-fast tuning speed less than 0.54 ns, and a tunable bandwidth from 1.27 to 4.47 GHz is experimentally demonstrated. This fully tunable filter offers significant potential in future radar and next-generation wireless communication applications.

Field management in NiO x /β-Ga2O3 merged-PIN Schottky diodes: simulation studies and experimental validation

In recent years, p-type NiO x has emerged as a promising alternative to realize kilovolt-class β-Ga2O3-based PN junction diodes. However, only a handful of studies could realize β–Ga2O3-based unipolar diodes using NiO x as a guard ring or floating rings. In this work, we investigate the device design of NiO x /β-Ga2O3 unipolar diodes using the technology computer aided design simulations and experimental validations. We show that a systematic electric field management approach can potentially lead to NiO x /β-Ga2O3 heterojunction unipolar diode and offer enhanced breakdown characteristics without a severe compromise in the ON-state resistance. Accordingly, the NiO x /β-Ga2O3 heterojunction diode in the merged-PIN Schottky configuration is shown to outperform the regular Schottky diode or junction barrier Schottky diode counterpart. The analysis performed in this work is believed to be valuable in the device design of β-Ga2O3-based unipolar diodes that use a different p-type semiconductor candidate as guard rings and floating rings.

Characterization and Control of Carbon Nanotube Doping

Carbon nanotube FETs show great promise for beyond-Si and monolithic 3D electronics, however there are still fundamental questions to explore. In particular, controlled N- and P- doping is a fundamental process module which can be used to engineer semiconductor resistance in un-gated regions such as the contact or extension, as well as optimize band-to-band tunneling leakage [1-4]. To-date both N- and P- doping has been demonstrated for CNT, but the optimal strategies for doping control and carrier density quantification have not been determined. In this work, we present a study of N- and P- doping using solid-state dopants and doping control strategy using a dielectric barrier of tunable thickness. A TCAD evaluation reveals the tradeoffs between carrier density and mobility for increasing dielectric barrier thickness, and reveals the critical role of dielectric constant in optimizing performance of spacer doping [5]. Multiple characterization approaches under evaluation help to correlate doping strength to experimentally measurable quantities with insight into the doping mechanisms. Finally, we will summarize potential approaches for improving doping control and quantification, and progress towards integration of the doping in highly-scaled high-performance carbon nanotube FETs [6].[1] Z. Zhang, et al., “Complementary carbon nanotube metal-oxide-semiconductor field-effect transistors with localized solid-state extension doping,” Nature Electronics, 2023.[2] Q. Lin, et al., “Band-to-band Tunneling Leakage Current Characterization and Projection in Carbon Nanotube Transistors,” ACS Nano, 2023.[3] G. Zeevi, et al., “PN Junction and band to band tunneling in carbon nanotube transistors at room temperature,” Nanotechnology, 2021.[4] L. Liyanage, et al., “VLSI-compatible carbon nanotube doping technique with low work-function metal oxides,” Nano Letters, 2014.[5] C. Gilardi et al., “Barrier Booster for Remote Extension Doping and its DTCO for 1D & 2D FETs”, IEDM 2023[6] S.Li, et al., “High-performance and low parasitic capacitance CNT MOSFET: 1.2 mA/μm at VDS of 0.75 V by self-aligned doping in sub-20 nm spacer,” IEDM 2023.

Atomic-precision control of plasmon-induced single-molecule switching in a metal–semiconductor nanojunction

Atomic-scale control of photochemistry facilitates extreme miniaturisation of optoelectronic devices. Localised surface plasmons, which provide strong confinement and enhancement of electromagnetic fields at the nanoscale, secure a route to achieve sub-nanoscale reaction control. Such local plasmon-induced photochemistry has been realised only in metallic structures so far. Here we demonstrate controlled plasmon-induced single-molecule switching of peryleneanhydride on a silicon surface. Using a plasmon-resonant tip in low-temperature scanning tunnelling microscopy, we can selectively induce the dissociation of the O–Si bonds between the molecule and surface, resulting in reversible switching between two configurations within the nanojunction. The switching rate can be controlled by changing the tip height with 0.1-Å precision. Furthermore, the plasmon-induced reactivity can be modified by chemical substitution within the molecule, suggesting the importance of atomic-level design for plasmon-driven optoelectronic devices. Thus, metal–single-molecule–semiconductor junctions may serve as a prominent controllable platform beyond conventional nano-optoelectronics.

Wafer-bonded In0.53Ga0.47As/GaN p–n diodes with near-unity ideality factor

III–V/III-nitride p–n junctions were realized via crystal heterogeneous integration, and the resulting diodes were characterized to analyze electrical behavior and junction quality. p-type In0.53Ga0.47As, which is a well-established base layer in InP heterojunction bipolar transistor (HBT) technology, was used in combination with a homoepitaxial n-type GaN. The latter offers low dislocation density, coupled with high critical electric field and saturation velocity, which are attractive for use in future HBT collector layers. Transmission electron microscopy confirms an abrupt interface in the fabricated heterogeneous diodes. Electrical characterization of the diodes reveals a near-unity ideality factor (n ∼ 1.07) up to 145 °C, a high rectification ratio of ∼108, and a low interface trap density of 3.7 × 1012 cm−2.

Carbon nanotube thin film pn junction diode with high-temperature tolerance using chemical dopants

Abstract Chemical doping of carbon nanotubes (CNTs) by adsorption with high-temperature-tolerant molecules is required for the fabrication of various types of electronic devices for their performance maintenance under harsh thermal conditions during the fabrication and operation processes. Here, we demonstrate the fabrication of CNT thin film pn junction diodes using a combination of 1,4,5,8,9,11-hexaazatriphenylenehexacarbonitrile as a p-dopant and a complex salt of potassium hydroxide and benzo-18-crown-6 ether as an n-dopant. The fabricated devices demonstrated a reasonably stable rectifying behavior, even after heating to 200 °C for 300 min.

Demonstration of a lateral p-NiO/n-GaN JFET fabricated by selective-area regrowth

In this paper, we demonstrated experimentally a lateral GaN-based junction field effect transistor (JFET). A selective area regrowth of p-NiO on the as-grown n-GaN channel layer was developed by magnetron sputtering at room temperature to form the p–n junction. A self-aligned gate process and a post metal annealing process were employed to improve the device performances. The measured results show that the annealed JFET exhibits an ON/OFF ratio exceeding 106 and a higher breakdown voltage up to 814 V without any terminal structure. The breakdown voltage is determined by the reverse breakdown of parasitic PN junction between gate and drain. Further, the threshold voltage of the p-NiO/n-GaN JFET exhibits excellent temperature stability in the range of 300–500 K.

Rapid fabrication approach for active photonic devices by employing spin-on dopants.

Modulation based on the plasma dispersion effect can be achieved by controlling free carriers in the optical region with the aid of pn junction diodes. The embedded diodes are commonly realized with ion implantation, which is only available in large facilities with significant costs and sparse schedules. A cost- and time-effective method is reported in this study to improve flexibility during the development phase. The suggested process is based on spin-on dopants and free of a hard mask for further simplification. Following the implementation of devices with this method, electrical and optical characterization results are presented.

Design optimization of wide-gate swing E-mode GaN HEMTs with junction barrier Schottky gate

To increase the gate swing, a GaN-based high-electron-mobility transistor with a junction barrier Schottky gate (JBS-HEMT) was proposed. Compared to conventional p-GaN Schottky gate HEMTs (Conv-HEMT), the high electric field at the surface is transferred to the pn junction inside the body, and the extended depletion region of the pn junction shields the surface Schottky contact interface for the JBS-HEMT. After fitting the model to the reported device, the proposed JBS-HEMT was simulated and optimized using the Sentaurus TCAD tool. The simulation results of the optimized JBS-HEMT demonstrate a high gate breakdown voltage (17.6 V), which is 158.5% higher than the gate breakdown voltage of the Conv-HEMT (11.1 V) and a lower gate leakage current of six orders of magnitude than the Conv-HEMT at the gate-to-source voltage of 10 V. The proposed JBS-HEMT exhibits a positive threshold voltage (1.68 V) and excellent threshold voltage stability, and the maximum threshold voltage drift of the JBS-HEMT (+0.237 V) is smaller than that of the Conv-HEMT (−0.714 V) under gate stress conditions. The peak transconductance of the JBS-HEMT (186 mS mm−1) at athe drain-to-source voltage of 10 V showed almost no reduction compared to the Conv-HEMT (189 mS mm−1), which solves the problem of decreased transconductance capability of the reported GaN HEMT with a p-n junction gate (PNJ-HEMT). It was confirmed that the JBS-HEMT has excellent gate stability and potential for power electronics applications.

Exact solutions for thermally induced electromechanical fields of PN junctions in centrosymmetric semiconductors

PN junctions play important roles in semiconductor devices. Flexoelectricity, an electromechanical coupling between strain gradient and electric polarization, has non-negligible contributions in nano-devices. The thermoflexoelectric effect is a phenomenon in which temperature gradients generate inhomogeneous strains and further induce flexoelectric polarizations. Therefore, temperature gradients can affect carrier transport in PN junctions through the thermoflexoelectric effect. In this paper, a one-dimensional model of the PN junction under a uniform temperature change is established. Exact solutions for the electromechanical fields in the PN junction are obtained for the first time. The effects of the temperature gradient, doping level, and flexoelectric coefficient on the electromechanical behaviors of the PN junction are numerically analyzed. The results indicate that carrier concentrations in the p and n regions are sensitive to temperature gradients because of the screening effect of the mobile charge on the flexoelectric polarization induced by the temperature gradient. Meanwhile, the flexoelectric field and the initial built-in electric field in the depletion region jointly determine the magnitude of the potential barrier, and thus, the temperature-gradient-induced flexoelectric field can tune the switching characteristics of the PN junction. This study provides a theoretical basis for the tuning of the electromechanical behavior of the PN junction by thermally induced flexoelectric fields.

Raman spectroscopy and photoluminescence study of PN junction p-graphene/n-GaAs.

Single layer graphene (SLG) was synthesized via high-quality chemical vapor deposition (CVD) on high-quality copper and subsequently transferred onto SiO2 and on n-GaAs substrates with varying doping electron concentrations (n = 1016, 1017, 5 × 1017, 1018, and 5 × 1018cm-3). The n-GaAs substrates were grown by molecular beam epitaxy. The optical properties of the SLG were investigated through photoluminescence (PL) and Raman spectroscopy measurements. Carrier concentration n or p and Fermi energy (EF) values in SLG were determined both before and after the transfer onto n-GaAs, and these findings were validated through PL studies. The Raman spectroscopy results indicated an increase in the transfer of electrons from n-GaAs to SLG as the doping electron density in n-GaAs increased. PL analysis revealed a significant change in the bandgap energy (Eg) of n-GaAs due to bandgap narrowing and the Burstein-Moss shift. Our data enable us to determine the energy band diagrams. Upon aligning the energy bands, an increase in transferred carrier density is accompanied by changes in Fermi energies and an increase in the potential barrier (∆U). The increase in ∆U is of significant interest to ensure that charges are directed more efficiently toward the cell's electrical contacts in the case of photovoltaic application. There, they can contribute significantly to the generated electric current, thereby enhancing the performance of a cell. Our results can provide insights into the interaction in graphene-based heterostructures and aid in selecting the best parameters for developing new advanced devices.

High modulation efficiency sinusoidal vertical PN junction phase shifter in silicon-on-insulator

In this paper, a sinusoidal vertical PN junction phase shifter on a silicon waveguide is designed, and the results demonstrate that modifying the shape of the PN junction significantly increases the area of the depletion region within the standard waveguide width of 500 nm, thereby enhancing the overlap between the depletion region and optical waveguide modes under reverse bias conditions. Furthermore, by adjusting the sinusoidal amplitude (A) of the doping contact interface, it is observed that when A=0.065µm, the resulting sinusoidal PN junction most effectively enhances the interaction between carriers and photons, leading to the highest modulation efficiency and the lowest loss. Based on this, further adjustment of the doping concentration distribution in the waveguide was conducted using a doping compensation method. It is observed that setting the doping concentration at 3×1018cm−3 in the heavily doped region and at 1×1018cm−3 in the lightly doped region enables the phase shifter to achieve high modulation efficiency while maintaining low loss. This is attributed to the highest optical intensity being concentrated in the central region of the waveguide, as well as to the positive correlation between doping concentration and modulation efficiency. The final designed device with a length of 1.5 mm successfully attained a low V π L of 0.58V⋅cm, resulting in high modulation efficiency. By employing traveling wave electrodes and ensuring that the effective refractive index of the radio frequency (RF) matches the optical group index (OGI), circuit-level simulations were conducted. The device exhibited a 3 dB bandwidth of 8.85 GHz and eye diagrams of up to 40 Gbit/s, with a maximum extinction ratio (ER) of 8.27 dB and a bit error rate (BER) of 8.83×10−6, which can be widely used in the field of high-speed silicon optical modules.

Characterizing electric fields in semiconductor devices: effect of second-harmonic light interference.

Characterizing electric fields in semiconductor devices using electric field-induced second-harmonic generation (EFISHG) has opened new opportunities for an advanced device design. However, this new technique still has challenges due to the interference between background second-harmonic generation (SHG) and EFISHG generated light. We demonstrate that interference effects can effectively be eliminated during EFISHG measurements by focusing the laser from the transparent substrate side of a GaN PN diode, enabling straightforward quantitative electric field analysis, in contrast to PN junction interface side measurements. A model based on wave generation and propagation is proposed and highlights the incoherence between background SHG and EFISHG light. This incoherence may be attributed to the depth of focus of the incident laser and phase mismatch between incident and SHG light.

Microscale Lateral Perovskite Light Emitting Diode Realized by Self-Doping Phenomenon.

High-definition near-eye display technology has extremely close sight distance, placing a higher demand on the size, performance, and array of light-emitting pixel devices. Based on the excellent photoelectric performance of metal halide perovskite materials, perovskite light-emitting diodes (PeLEDs) have high photoelectric conversion efficiency, adjustable emission spectra, and excellent charge transfer characteristics, demonstrating great prospects as next-generation light sources. Despite their potential, the solubility of perovskite in photoresist presents a hurdle for conventional micro/nano processing techniques, resulting in device sizes typically exceeding 50 μm. This limitation impedes the further downsizing of perovskite-based components. Herein, we propose a plane-structured PeLED device that can achieve microscale light-emitting diodes with a single pixel device size < 2 μm and a luminescence lifetime of approximately 3 s. This is accomplished by fabricating a patterned substrate and regulating ion distribution in the perovskite through self-doping effects to form a PN junction. This breakthrough overcomes the technical challenge of perovskite-photoresist incompatibility, which has hindered the development of perovskite materials in micro/nano optoelectronic devices. The strides made in this study open up promising avenues for the advancement of PeLEDs within the realm of micro/nano optoelectronic devices.

Preparation and Electrical Performance Analysis of a GaAs‐Based Tritium Battery

A nuclear battery is a promising candidate for small power supply sources in the military and commercial fields, but its output power and energy conversion efficiency need to be improved. This paper mainly describes a design, preparation, and electrical performance analysis of a GaAs-based tritium battery. The design of the tritium battery uses a multistage process with Monte Carlo and Matlab simulations. A titanium tritide source was prepared by a high-temperature tritium absorption device, and a GaAs semiconductor transducer was developed using a metal-organic chemical vapor deposition method. The D/Ti ratio and T/Ti ratio of the deuterium/tritium titanium films were 1.9 and 1.7, respectively. Two kinds of GaAs-based PIN junction semiconductor transducers were proposed and irradiated with the prepared tritium source. Their electrical properties were measured in situ and analyzed qualitatively. Under the irradiation of a 0.61-Ci tritium source, the short-circuit current of the device was 0.3 to 0.38 μA, the open-circuit voltage was 35 to 63 mV, the peak power was 2.8 to 6.4 nW, and the energy conversion efficiency of the GaAs semiconductor transducer was about 1.86%. It was found that an air gap between the GaAs semiconductor transducer and the radioactive source caused serious loss of beta particle energy, resulting in low output power and low energy conversion efficiency of the nuclear battery. The open-circuit voltage of the devices with a SiO2 passivation layer on the surface decreased both in a dark environment and in light illumination, but SiO2 passivation did not reduce surface recombination as expected. The research work in this paper will provide some valuable reference for the preparation and performance optimization of nuclear batteries.

Electrical Synapses Mediate Embryonic Hyperactivity in a Zebrafish Model of Fragile X Syndrome.

Although hyperactivity is associated with a wide variety of neurodevelopmental disorders, the early embryonic origins of locomotion have hindered investigation of pathogenesis of these debilitating behaviors. The earliest motor output in vertebrate animals is generated by clusters of early-born motor neurons (MNs) that occupy distinct regions of the spinal cord, innervating stereotyped muscle groups. Gap junction electrical synapses drive early spontaneous behavior in zebrafish, prior to the emergence of chemical neurotransmitter networks. We use a genetic model of hyperactivity to gain critical insight into the consequences of errors in motor circuit formation and function, finding that Fragile X syndrome model mutant zebrafish are hyperexcitable from the earliest phases of spontaneous behavior, show altered sensitivity to blockade of electrical gap junctions, and have increased expression of the gap junction protein Connexin 34/35. We further show that this hyperexcitable behavior can be rescued by pharmacological inhibition of electrical synapses. We also use functional imaging to examine MN and interneuron (IN) activity in early embryogenesis, finding genetic disruption of electrical gap junctions uncouples activity between mnx1 + MNs and INs. Taken together, our work highlights the importance of electrical synapses in motor development and suggests that the origins of hyperactivity in neurodevelopmental disorders may be established during the initial formation of locomotive circuits.