Abstract
Modulation based on the plasma dispersion effect can be achieved by controlling free carriers in the optical region with the aid of pn junction diodes. The embedded diodes are commonly realized with ion implantation, which is only available in large facilities with significant costs and sparse schedules. A cost- and time-effective method is reported in this study to improve flexibility during the development phase. The suggested process is based on spin-on dopants and free of a hard mask for further simplification. Following the implementation of devices with this method, electrical and optical characterization results are presented.
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