Ionized Cluster Beam Epitaxy Research Articles

Investigation on structural properties of ZnSe, CdTe, and ZnTe films grown by ionized cluster beam epitaxy

Epitaxial films of ZnSe, CdTe, and ZnTe were grown, on GaAs(1 0 0) substrates by ionized cluster beam epitaxy (ICBE). Streaky reflective high energy electron diffraction (RHEED) patterns indicated good crystallinity and surface flatness of the epitaxial ZnSe, CdTe, and ZnTe films. It was found that the crystalline quality of the epilayers depended on the kinetic energy of the clusters and the substrate temperature. The minimum X-ray rocking curve peak widths of the ZnSe, CdTe, and ZnTe epilayers were determined to be 160, 630, and 110 arc sec, respectively.

Growth of ZnTe films by ionized cluster beam epitaxy at low temperature

Lattice-mismatched ZnTe(100) epilayers and highly (111)-oriented ZnTe film were grown on GaAs(100), Si(100), and glass substrates, respectively, by ionized cluster beam epitaxy at a growth rate of up to 1.2 nm s −1. From the analysis of X-ray diffraction and reflection high-energy electron diffraction, the grown layers were shown to be ZnTe epitaxial films. It was found that the crystalline quality of the epilayers depended on the substrate temperature. At a low substrate temperature of 300 °C, the optimum films on GaAs, Si and glass exhibit full width at half maximum (FWHM) values of X-ray rocking curves to be 110, 148 and 1417 arc sec, respectively.

A Study on the Growth of a Ferroelectric Thin Film Using Ionized Cluster Beam Epitaxy Technique and the Application for Ulsi Fabrication

AbstractThe dielectric properties of Ba0.65Sr0.35TiO3(BST) films deposited by an electron beam assisted ionized cluster beam epitaxy (ICBE) technique were investigated. Highly (110) oriented BST films having a thickness up to 1, um have been successfully grown on a Si (100) substrate at 400°C using the electron beam assisted ICBE system with a plasma O2 source. It was found that the dielectric constant increases from 475 to 1191 with different process conditions. A BST film with a thickness of 500Å deposited at a substrate temperature of 400°C has a dielectric constant of 1191 and a leakage current of about 2.37×10-9 A/cm2. This shows the BST film can be applied to dielectrics of ULSI capacitors.

Growth of ZnSe films on GaAs by ionized cluster beam epitaxy

Growth of ZnSe single crystal films on GaAs(100) was realized by ionized cluster beam epitaxy (ICBE). With a single evaporizing source of ZnSe, the epilayer of ZnSe was identified to be stoichiometric. Streaky reflective high energy electron diffraction (RHEED) showed the fine crystallinity and surface flatness of the epitaxial ZnSe films. The crystallographic quality of ZnSe films was further evaluated by X-ray diffraction. The minimum full width at half maximum (FWHM) of ZnSe epilayers was determined to be 133 arc sec. The dependence of the FWHM on substrate temperature and acceleration voltage was also studied.

Atomic size effect on the formation of ionized cluster beam epitaxy in Lennard-Jones systems

Ionized cluster beam deposition is studied by molecular dynamics simulations in which the atomic size of incident cluster atoms is different from the size of substrate atoms. Lennard-Jones interatomic potentials are used for the two-component system. The results provide the morphologies of the overlayers for various atomic sizes and are compared to simulation results of molecular beam epitaxy.

Growth of CdTe films on GaAs by ionized cluster beam epitaxy

Abstract Stoichiometric epitaxial films of CdTe were grown on (100)GaAs substrates by ionized cluster beam (ICB) epitaxy. Streaky RHEED patterns indicated good crystallinity and surface flatness of the epitaxial CdTe films. CdTe(100) orientation was obtained when the substrate preheating temperature was 480°C, while CdTe growth inboth (100) and (111) orientations occured when the substrate preheating temperature was above 550°C. The characteristics of the ICB growth process were investigated and the cluster-involving growth behavior has been evidenced. When sufficient clusters were generated in the deposition beam under adequate source vapor pressures, the crystalline quality of the resulting CdTe epilayers improved significantly with the increase of kinetic energy of the CdTe clusters. The best CdTe epilayer obtained exhibited a CdTe(400) double crystal rocking curve (DCRC) having a FWHM of 630 arc sec.

Ionized-cluster beam epitaxy

Film formation by ionized-cluster beam epitaxy is characterized by various processes including sputtering, ion implantation, substrate heating, and migration effects. These processes can be utilized to form good crystalline epitaxial films. The film formation mechanism has been studied from the view point of atomistic model and it is found to be different from that observed with the other methods. Some properties of Si and ZnO are shown as typical examples of the standard type and the reactive type of ionized cluster beam epitaxy.