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Abstract
Epitaxial films of ZnSe, CdTe, and ZnTe were grown, on GaAs(1 0 0) substrates by ionized cluster beam epitaxy (ICBE). Streaky reflective high energy electron diffraction (RHEED) patterns indicated good crystallinity and surface flatness of the epitaxial ZnSe, CdTe, and ZnTe films. It was found that the crystalline quality of the epilayers depended on the kinetic energy of the clusters and the substrate temperature. The minimum X-ray rocking curve peak widths of the ZnSe, CdTe, and ZnTe epilayers were determined to be 160, 630, and 110 arc sec, respectively.
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