Growth of ZnTe films by ionized cluster beam epitaxy at low temperature

Abstract

Lattice-mismatched ZnTe(100) epilayers and highly (111)-oriented ZnTe film were grown on GaAs(100), Si(100), and glass substrates, respectively, by ionized cluster beam epitaxy at a growth rate of up to 1.2 nm s −1. From the analysis of X-ray diffraction and reflection high-energy electron diffraction, the grown layers were shown to be ZnTe epitaxial films. It was found that the crystalline quality of the epilayers depended on the substrate temperature. At a low substrate temperature of 300 °C, the optimum films on GaAs, Si and glass exhibit full width at half maximum (FWHM) values of X-ray rocking curves to be 110, 148 and 1417 arc sec, respectively.