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Abstract
Growth of ZnSe single crystal films on GaAs(100) was realized by ionized cluster beam epitaxy (ICBE). With a single evaporizing source of ZnSe, the epilayer of ZnSe was identified to be stoichiometric. Streaky reflective high energy electron diffraction (RHEED) showed the fine crystallinity and surface flatness of the epitaxial ZnSe films. The crystallographic quality of ZnSe films was further evaluated by X-ray diffraction. The minimum full width at half maximum (FWHM) of ZnSe epilayers was determined to be 133 arc sec. The dependence of the FWHM on substrate temperature and acceleration voltage was also studied.
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