Using I- V measurements, the electrical characteristics of Sb/n-Si Schottky contacts were determined after silicon ion bombardment to dose densities from 5 × 10 13 up to 1 × 10 16 Si + cm −2. It was found that the conductivity of the contacts between 20 and 100°C can be fitted to Arrhenius plots. The activation energy, determined from these plots, was 0.35 ± 0.05 eV, independent of dose density and of contact size. α-particle channeling measurements showed significant structural changes between contacts which were ion bombarded to different doses. Below 5 × 10 14 Si + cm −2 no measurable amorphization occurred, while for dose densities φ ≥ 5 × 10 14Si + cm −2, the silicon substrates were progressively amorphized. RBS measurements showed that very little mixing took place. A theoretical analysis agrees with this result indicating that the main mixing mechanism is due to ballistic processes.